The synthesis of competing phase GeSe and GeSe2 2D layered materials
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We report the synthesis of layered anisotropic semiconductor GeSe and GeSe2 nanomaterials through low temperature and atmospheric pressure chemical vapor deposition using halide based precursors. The crystal phase is controlled by simply changing selenium vapor pressure.
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1994 ◽
Vol 33
(Part 1, No. 4A)
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pp. 2019-2024
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1993 ◽
Vol 11
(3)
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pp. 1083
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1995 ◽
Vol 142
(7)
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pp. 2458-2463
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Keyword(s):
1993 ◽
Vol 11
(3)
◽
pp. 1124
◽
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