Low Temperature Atmospheric Pressure Chemical Vapor Deposition for Epitaxial Growth of SiGe Bipolar Transistors

1995 ◽  
Vol 142 (7) ◽  
pp. 2458-2463 ◽  
Author(s):  
T. O. Sedgwick ◽  
D. A. Grützmacher
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Bipolar Transistors ◽  
Pressure Chemical

Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition

1988 ◽  
Vol 52 (13) ◽  
pp. 1053-1055 ◽  
Author(s):  
D. Meakin ◽  
M. Stobbs ◽  
J. Stoemenos ◽  
N. A. Economou
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

1995 ◽  
Vol 78 (8) ◽  
pp. 5136-5138 ◽  
Author(s):  
Christian A. Zorman ◽  
Aaron J. Fleischman ◽  
Andrew S. Dewa ◽  
Mehran Mehregany ◽  
Chacko Jacob ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Pressure Chemical ◽  
Sic Films

Synthesis of Iron Pyrite Film through Low Temperature Atmospheric Pressure Chemical Vapor Deposition

2012 ◽  
Vol 1447 ◽  
Author(s):  
Siva P Adusumilli ◽  
Tara P Dhakal ◽  
Charles R Westgate
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Optical Absorption Coefficient ◽  
Sulfur Source ◽  
Iron Pyrite ◽  
Vapor Deposition Technique ◽  
Pressure Chemical

ABSTRACTPyrite phase of FeS2 has attracted substantial attention in the field of thin film solar technology because of its high optical absorption coefficient (~5 x 105 cm-1 at hν > 1.3eV) and the band gap of 0.95 eV. In this research, we have grown highly pure iron pyrite films using a low temperature atmospheric pressure chemical vapor deposition technique. The synthesis temperature is in the range of 375-400°C and Di-tert-butyl disulfide (TBDS) is used as the sulfur precursor. TBDS is a safe and low cost sulfur source unlike H2S, which is highly toxic and requires extreme care in handling. The films obtained were uniform and free from common impurity phases such as troilite and marcasite. The FeS2 films grown earlier with CVD synthesis and sulfurized using H2S had pinholes and contained secondary phases like marcasite and troilite. The FeS2 pyrite phase was confirmed using various characterization techniques that included SEM, EDS, XRD and XPS.

Sign in / Sign up

Export Citation Format

Share Document