Low-temperature atmospheric pressure chemical vapor deposition of titanium disulfide films

1992 ◽  
Vol 4 (6) ◽  
pp. 1144-1146 ◽  
Author(s):  
Charles H. Winter ◽  
T. Suren Lewkebandara ◽  
James W. Proscia
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Titanium Disulfide ◽  
Pressure Chemical

Synthesis of Iron Pyrite Film through Low Temperature Atmospheric Pressure Chemical Vapor Deposition

2012 ◽  
Vol 1447 ◽  
Author(s):  
Siva P Adusumilli ◽  
Tara P Dhakal ◽  
Charles R Westgate
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Optical Absorption Coefficient ◽  
Sulfur Source ◽  
Iron Pyrite ◽  
Vapor Deposition Technique ◽  
Pressure Chemical

ABSTRACTPyrite phase of FeS2 has attracted substantial attention in the field of thin film solar technology because of its high optical absorption coefficient (~5 x 105 cm-1 at hν > 1.3eV) and the band gap of 0.95 eV. In this research, we have grown highly pure iron pyrite films using a low temperature atmospheric pressure chemical vapor deposition technique. The synthesis temperature is in the range of 375-400°C and Di-tert-butyl disulfide (TBDS) is used as the sulfur precursor. TBDS is a safe and low cost sulfur source unlike H2S, which is highly toxic and requires extreme care in handling. The films obtained were uniform and free from common impurity phases such as troilite and marcasite. The FeS2 films grown earlier with CVD synthesis and sulfurized using H2S had pinholes and contained secondary phases like marcasite and troilite. The FeS2 pyrite phase was confirmed using various characterization techniques that included SEM, EDS, XRD and XPS.

scholarly journals The synthesis of competing phase GeSe and GeSe2 2D layered materials

RSC Advances ◽  
2020 ◽  
Vol 10 (63) ◽  
pp. 38227-38232
Author(s):  
Kentaro Yumigeta ◽  
Cassondra Brayfield ◽  
Hui Cai ◽  
Debarati Hajra ◽  
Mark Blei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Pressure ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Layered Materials ◽  
2D Layered Materials ◽  
Selenium Vapor ◽  
Pressure Chemical

We report the synthesis of layered anisotropic semiconductor GeSe and GeSe2 nanomaterials through low temperature and atmospheric pressure chemical vapor deposition using halide based precursors. The crystal phase is controlled by simply changing selenium vapor pressure.

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