PbS-Quantum-Dot-Based Heterojunction Solar Cells Utilizing ZnO Nanowires for High External Quantum Efficiency in the Near-Infrared Region

2013 ◽  
Vol 4 (15) ◽  
pp. 2455-2460 ◽  
Author(s):  
Haibin Wang ◽  
Takaya Kubo ◽  
Jotaro Nakazaki ◽  
Takumi Kinoshita ◽  
Hiroshi Segawa
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Near Infrared ◽  
Infrared Region ◽  
Zno Nanowires ◽  
Heterojunction Solar Cells ◽  
Near Infrared Region ◽  
Pbs Quantum Dot

scholarly journals Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency

RSC Advances ◽  
2020 ◽  
Vol 10 (54) ◽  
pp. 32976-32983
Author(s):  
Xinyu Zhao ◽  
Lixiang Huang ◽  
Yukun Wang ◽  
Xinglin Zhu ◽  
Lei Li ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Near Infrared ◽  
Infrared Region ◽  
High Gain ◽  
Ultraviolet Region ◽  
Interface Engineering ◽  
High Responsivity ◽  
Near Infrared Region

Efficient CH3NH3PbI3 photodetectors (PDs) with an extremely high gain of the maximum external quantum efficiency (EQE) of 140 000% within the ultraviolet region to the near infrared region (NIR) and an extremely high responsivity (R) under a low bias of −5 V were successfully fabricated.

Polymer solar cells based on very narrow-bandgap polyplatinynes with photocurrents extended into the near-infrared region

2008 ◽  
pp. 5484 ◽  
Author(s):  
Xing-Zhu Wang ◽  
Wai-Yeung Wong ◽  
Kai-Yin Cheung ◽  
Man-Kin Fung ◽  
Aleksandra B. Djurišić ◽  
...  
Keyword(s):  
Solar Cells ◽  
Near Infrared ◽  
Polymer Solar Cells ◽  
Infrared Region ◽  
Narrow Bandgap ◽  
Near Infrared Region

scholarly journals Infrared Solution-Processed Quantum Dot Solar Cells Reaching External Quantum Efficiency of 80% at 1.35 µm and J sc in Excess of 34 mA cm−2

2018 ◽  
Vol 30 (7) ◽  
pp. 1704928 ◽  
Author(s):  
Yu Bi ◽  
Santanu Pradhan ◽  
Shuchi Gupta ◽  
Mehmet Zafer Akgul ◽  
Alexandros Stavrinadis ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Solution Processed ◽  
Quantum Dot Solar Cells

Optical and Photovoltaic Properties of CdS/Ag2S Quantum Dots Co-Sensitized-Solar Cells

2013 ◽  
Vol 761 ◽  
pp. 15-18 ◽  
Author(s):  
Auttasit Tubtimtae ◽  
Ming Way Lee
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Near Infrared ◽  
Energy Gap ◽  
Photocurrent Density ◽  
Infrared Region ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
Different Characteristics ◽  
Sensitized Solar Cells

Subscript textWe present a co-sensitization of CdS/Ag2S quantum-dot as sensitizers for solar cells. The optical properties of single and double-layered quantum-dot conditions were monitored using UV-Vis spectrophotometer. The results show that the different characteristics of absorption spectra depended on the types of QDs, indicating to the different energy gap of each QDs deposited on TiO2 surface and the tunable absorption ranges of the sample of double-layered quantum-dot-sensitized TiO2 electrodes are broader and the absorption intensity are higher than the single-layered quantum-dot, attributed to the co-absorption of two QDs to the light and both CdS and Ag2S are activated in visible to near-infrared region (450-1100 nm). The photovoltaic data shows that the highest efficiency of 1.41% with a photocurrent density, Jsc of 20.6 mA/cm2, an open-circuit voltage, Voc of 0.32 V and a fill factor, FF of 21.3% were yielded by the sample of CdS(3)/Ag2S(4) as an optimum condition of dipping cycles for CdS and Ag2S under irradiance of 100 mW/cm2 (AM 1.5G).

scholarly journals Annealing-Temperature Dependent Carrier-Transportation in ZnO/PbS Quantum Dot Solar Cells Fabricated Using Liquid-Phase Ligand Exchange Methods

Energies ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 5037
Author(s):  
Akihiro Takahashi ◽  
Haibin Wang ◽  
Takeshi Fukuda ◽  
Norihiko Kamata ◽  
Takaya Kubo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Liquid Phase ◽  
Quantum Dot ◽  
Active Layer ◽  
Ligand Exchange ◽  
Carrier Transport ◽  
Annealing Temperature ◽  
Defect States ◽  
Heterojunction Solar Cells ◽  
Pbs Quantum Dot

We constructed ZnO/PbS quantum dot (QD) heterojunction solar cells using liquid-phase ligand exchange methods. Colloidal QD solutions deposited on ZnO-dense layers were treated at different temperatures to systematically study how thermal annealing temperature affected carrier transport properties. The surface of the layers became dense and smooth as the temperature approached approximately 80 °C. The morphology of layers became rough for higher temperatures, causing large grain-forming PbS QD aggregation. The number of defect states in the layers indicated a valley-shaped profile with a minimum of 80 °C. This temperature dependence was closely related to the amount of residual n-butylamine complexes in the PbS QD layers and the active layer morphology. The resulting carrier diffusion length obtained on the active layers treated at 80 °C reached approximately 430 nm. The solar cells with a 430-nm-thick active layer produced a power conversion efficiency (PCE) of 11.3%. An even higher PCE is expected in solar cells fabricated under optimal annealing conditions.

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