Spin-filter induced large magnetoresistance in 2D van der Waals magnetic tunnel junctions

Nanoscale ◽  
2021 ◽  
Author(s):  
Wei Yang ◽  
Yuan Cao ◽  
Jiangchao Han ◽  
Xiaoyang Lin ◽  
Xinhe Wang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Two Dimensional ◽  
Spin Filter

We theoretically predict the spin-filter induced large magnetoresistance in two-dimensional MTJs based on room temperature two-dimensional ferromagnet 1T-VSe2.

scholarly journals Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

2021 ◽  
Vol 118 (4) ◽  
pp. 042411
Author(s):  
Thomas Scheike ◽  
Qingyi Xiang ◽  
Zhenchao Wen ◽  
Hiroaki Sukegawa ◽  
Tadakatsu Ohkubo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Spin Valve ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

Fabrication and magnetic-electronic properties of van der Waals Cr4Te5 ferromagnetic film

CrystEngComm ◽  
2021 ◽  
Author(s):  
Weiyuan Wang ◽  
Jiyu Fan ◽  
Hao Liu ◽  
Huan Zheng ◽  
Chuanlan Ma ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Van Der Waals ◽  
Ferromagnetic Film ◽  
Ferromagnetic Materials ◽  
Two Dimensional ◽  
Actual Number ◽  
Intrinsic Ferromagnetism

Exploiting two-dimensional room temperature ferromagnetic materials is always a significant and valuable work. However, the actual number of satisfied materials with intrinsic ferromagnetism is very limited. Here, the van der...

Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin filtering effects and high tunnel magnetoresistance via energy band difference

2021 ◽  
Author(s):  
Li Liu ◽  
Shizhuo Ye ◽  
Jin He ◽  
Qijun Huang ◽  
Hao Wang ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Differential Resistance ◽  
High Tunnel ◽  
Voltage Range ◽  
Negative Differential Resistance Effect ◽  
Magnetoresistance Ratio ◽  
Spin Filtering

Abstract Recently, the study on two-dimensional materials expands to the field of spintronics. The intrinsically ferromagnetic van der Waals materials such as CrI3 and CrBr3 receive much attention due to nearly 100% spin polarization and good stability, resulting in excellent performance in magnetic tunnel junctions. In this work, we design the magnetic tunnel junctions of Cu/CrI3/Cu and Cu/CrBr3/Cu with the electrodes of Cu(111) and the tunneling barrier of 4-monolayer CrI3 or CrBr3. Our first-principle calculations combined with nonequilibrium Green’s function method indicate that the CrBr3-based MTJ has a larger maximum tunneling magnetoresistance ratio than the CrI3-based MTJ. In a wide bias voltage range, the CrI3-based MTJ can maintain high spin filtering performance, while that of the CrBr3-based MTJ degrades sharply as the bias voltage increases. It is noted that negative differential resistance effect is observed in the CrBr3-based MTJ. The differences of spin transport properties between the CrI3-based MTJ and the CrBr3-based MTJ are clarified in terms of the inside device physics, including the spin-dependent projected density of states, band structures, Bloch states, and the electron density difference. This work provides some physical insights for the design of 2D van der Waals MTJ.

Ferromagnetic barrier induced large enhancement of tunneling magnetoresistance in van der Waals perpendicular magnetic tunnel junctions

Nanoscale ◽  
2021 ◽  
Author(s):  
Xiaolin Zhang ◽  
Baishun Yang ◽  
Xiaoyan Guo ◽  
Xiufeng Han ◽  
Yu Yan
Keyword(s):  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Large Enhancement

Schematics of TMR effect of FGT/CrI3/FGT and FGT/ScI3/FGT vdW MTJs.

scholarly journals Spin-Dependent Transport in van der Waals Magnetic Tunnel Junctions with Fe3GeTe2 Electrodes

Nano Letters ◽  
2019 ◽  
Vol 19 (8) ◽  
pp. 5133-5139 ◽  
Author(s):  
Xinlu Li ◽  
Jing-Tao Lü ◽  
Jia Zhang ◽  
Long You ◽  
Yurong Su ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Spin Dependent Transport ◽  
Dependent Transport

Analytical method for two dimensional current crowding effect in magnetic tunnel junctions

2002 ◽  
Vol 91 (10) ◽  
pp. 8783 ◽  
Author(s):  
Jian Chen ◽  
Yun Li ◽  
Janusz Nowak ◽  
Juan Fernandez de-Castro
Keyword(s):  
Analytical Method ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Two Dimensional ◽  
Current Crowding ◽  
Crowding Effect
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