scholarly journals Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

2021 ◽  
Vol 118 (4) ◽  
pp. 042411
Author(s):  
Thomas Scheike ◽  
Qingyi Xiang ◽  
Zhenchao Wen ◽  
Hiroaki Sukegawa ◽  
Tadakatsu Ohkubo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Spin Valve ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

Spin-Polarized Current in Spin Valves and Magnetic Tunnel Junctions

MRS Bulletin ◽  
2006 ◽  
Vol 31 (5) ◽  
pp. 389-394 ◽  
Author(s):  
Stuart Parkin
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Memory Storage ◽  
Tunnel Barrier ◽  
Tunnel Magnetoresistance ◽  
Ferromagnetic Electrodes ◽  
Diffusive Scattering ◽  
Spin Polarized ◽  
Tunnel Barriers

AbstractSpin-polarized currents can be generated by spin-dependent diffusive scattering in magnetic thin-film structures or by spin-dependent tunneling across ultrathin dielectrics sandwiched between magnetic electrodes.By manipulating the magnetic moments of the magnetic components of these spintronic materials, their resistance can be significantly changed, allowing the development of highly sensitive magnetic-field detectors or advanced magnetic memory storage elements.Whereas the magneto-resistance of useful devices based on spin-dependent diffusive scattering has hardly changed since its discovery nearly two decades ago, in the past five years there has been a remarkably rapid development in both the basic understanding of spin-dependent tunneling and the magnitude of useful tunnel magnetoresistance values.In particular, it is now evident that the magnitude of the spin polarization of tunneling currents in magnetic tunnel junctions not only is related to the spin-dependent electronic structure of the ferromagnetic electrodes but also is considerably influenced by the properties of the tunnel barrier and its interfaces with the magnetic electrodes.Whereas the maximum tunnel magnetoresistance of devices using amorphous alumina tunnel barriers and 3d transition-metal alloy ferromagnetic electrodes is about 70% at room temperature, using crystalline MgO tunnel barriers in otherwise the same structures gives tunnel magnetoresistance values of more than 350% at room temperature.

scholarly journals Large Inverse Tunnel Magnetoresistance in Magnetic Tunnel Junctions with an Fe3O4 Electrode

2021 ◽  
Vol 15 (3) ◽  
Author(s):  
Shoma Yasui ◽  
Syuta Honda ◽  
Jun Okabayashi ◽  
Takashi Yanase ◽  
Toshihiro Shimada ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions

2005 ◽  
Vol 86 (8) ◽  
pp. 082501 ◽  
Author(s):  
T. Nozaki ◽  
A. Hirohata ◽  
N. Tezuka ◽  
S. Sugimoto ◽  
K. Inomata
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Double Barrier ◽  
Tunnel Magnetoresistance

Enhanced tunnel magnetoresistance in Mn-based perpendicular magnetic tunnel junctions utilizing antiferromagnetically coupled bcc-Co-based interlayer

2021 ◽  
Vol 118 (17) ◽  
pp. 172412
Author(s):  
Kazuya Z. Suzuki ◽  
Tomohiro Ichinose ◽  
Satoshi Iihama ◽  
Ren Monma ◽  
Shigemi Mizukami
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

Giant tunnel magnetoresistance in polycrystalline magnetic tunnel junctions with highly textured MgAl2O4(001) based barriers

2018 ◽  
Vol 112 (2) ◽  
pp. 022408 ◽  
Author(s):  
Ikhtiar ◽  
Hiroaki Sukegawa ◽  
Xiandong Xu ◽  
Mohamed Belmoubarik ◽  
Hwachol Lee ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance
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