2D materials beyond graphene toward Si integrated infrared optoelectronic devices

Nanoscale ◽  
2020 ◽  
Vol 12 (22) ◽  
pp. 11784-11807 ◽  
Author(s):  
Changyong Lan ◽  
Zhe Shi ◽  
Rui Cao ◽  
Chun Li ◽  
Han Zhang
Keyword(s):  
2D Materials ◽  
Optoelectronic Devices ◽  
Infrared Light ◽  
Optical Modulators ◽  
Light Emitting ◽  
Light Emitting Devices

A study of typical 2D materials beyond graphene suitable for infrared applications, in particular, infrared light emitting devices, optical modulators, and photodetectors.

scholarly journals Photostable and Uniform CH3NH3PbI3 Perovskite Film Prepared via Stoichiometric Modification and Solvent Engineering

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 405
Author(s):  
Daocheng Hong ◽  
Mingyi Xie ◽  
Yuxi Tian
Keyword(s):  
Solar Cells ◽  
Optoelectronic Devices ◽  
Solvent Engineering ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Coverage Ratio ◽  
Fabrication Procedure ◽  
Fabrication Condition ◽  
Halide Perovskites ◽  
Photoluminescence Efficiency

Solution-processed organometal halide perovskites (OMHPs) have been widely used in optoelectronic devices, and have exhibited brilliant performance. One of their generally recognized advantages is their easy fabrication procedure. However, such a procedure also brings uncertainty about the opto-electric properties of the final samples and devices, including morphology, stability, coverage ratio, and defect concentration. Normally, one needs to find a balanced condition, because there is a competitive relation between these parameters. In this work, we fabricated CH3NH3PbI3 films by carefully changing the ratio of the PbI2 to CH3NH3I, and found that the stoichiometric and solvent engineering not only determined the photoluminescence efficiency and defects in the materials, but also affected the photostability, morphology, and coverage ratio. Combining solvent engineering and the substitution of PbI2 by Pb(Ac)2, we obtained an optimized fabrication condition, providing uniform CH3NH3PbI3 films with both high photoluminescence efficiency and high photostability under either I-rich or Pb-rich conditions. These results provide an optimized fabrication procedure for CH3NH3PbI3 and other OMHP films, which is crucial for the performance of perovskite-based solar cells and light emitting devices.

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Evaluation of Static Performance of Optoelectronic Semiconductor Devices under X-Rays Irradiation

2010 ◽  
Vol 173 ◽  
pp. 1-6 ◽  
Author(s):  
Haider F. Abdul Amir ◽  
Fuei Pien Chee
Keyword(s):  
Ionizing Radiation ◽  
Light Emitting Diode ◽  
Optoelectronic Devices ◽  
Third Party ◽  
Infrared Light ◽  
X Rays ◽  
Total Ionizing Dose ◽  
Light Emitting ◽  
Static Performance ◽  
Current Drives

In this research, optoelectronic devices consisted of an infrared light emitting diode and a phototransistor with no special handling or third party-packaging were irradiated to ionizing radiation utilizing x-rays. It was found that the devices under test (DUTs) undergo performance degradation in their functional parameters during exposure to x-rays. These damaging effects are depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects by x-rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to radiation.

scholarly journals A Review on Graphene-Based Light Emitting Functional Devices

Molecules ◽  
2020 ◽  
Vol 25 (18) ◽  
pp. 4217
Author(s):  
Muhammad Junaid ◽  
M. H. Md Khir ◽  
Gunawan Witjaksono ◽  
Zaka Ullah ◽  
Nelson Tansu ◽  
...  
Keyword(s):  
Thermal Emission ◽  
Ultra Wideband ◽  
Optical Modulators ◽  
Active Materials ◽  
Linear Dispersion ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Theoretical Investigations ◽  
Recent Developments ◽  
Potential Applications

In recent years, the field of nanophotonics has progressively developed. However, constant demand for the development of new light source still exists at the nanometric scale. Light emissions from graphene-based active materials can provide a leading platform for the development of two dimensional (2-D), flexible, thin, and robust light-emitting sources. The exceptional structure of Dirac’s electrons in graphene, massless fermions, and the linear dispersion relationship with ultra-wideband plasmon and tunable surface polarities allows numerous applications in optoelectronics and plasmonics. In this article, we present a comprehensive review of recent developments in graphene-based light-emitting devices. Light emissions from graphene-based devices have been evaluated with different aspects, such as thermal emission, electroluminescence, and plasmons assisted emission. Theoretical investigations, along with experimental demonstration in the development of graphene-based light-emitting devices, have also been reviewed and discussed. Moreover, the graphene-based light-emitting devices are also addressed from the perspective of future applications, such as optical modulators, optical interconnects, and optical sensing. Finally, this review provides a comprehensive discussion on current technological issues and challenges related to the potential applications of emerging graphene-based light-emitting devices.

scholarly journals In situ synthesis of stretchable and highly stable multi-color carbon-dots/polyurethane composite films for light-emitting devices

RSC Advances ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 1281-1286 ◽  
Author(s):  
Fei Lian ◽  
Chuanxi Wang ◽  
Qian Wu ◽  
Minghui Yang ◽  
Zhenyu Wang ◽  
...  
Keyword(s):  
Polymer Films ◽  
Carbon Dots ◽  
Composite Films ◽  
Optoelectronic Devices ◽  
In Situ Synthesis ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Polyurethane Composite

Stretchable, mechanically stable multi-color carbon-dots-based polymer films are in situ fabricated, and showed potential for application in optoelectronic devices.

Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires

2017 ◽  
Vol 5 (10) ◽  
pp. 2542-2551 ◽  
Author(s):  
Gao-Hang He ◽  
Ming-Ming Jiang ◽  
Lin Dong ◽  
Zhen-Zhong Zhang ◽  
Bing-Hui Li ◽  
...  
Keyword(s):  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Doped Zno

Electrically driven near-infrared light-emission from individual heavily Ga-doped ZnO microwires has been achieved, which can be analogous to incandescent sources.

Rare earth doped Si-rich ZnO for multiband near-infrared light emitting devices

2012 ◽  
Vol 101 (19) ◽  
pp. 191115 ◽  
Author(s):  
Emanuele Francesco Pecora ◽  
Thomas I. Murphy ◽  
Luca Dal Negro
Keyword(s):  
Rare Earth ◽  
Near Infrared ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Rare Earth Doped

Design and operation of mid-infrared light-emitting devices (lambdaapprox11 µm) based on a chirped superlattice

2000 ◽  
Vol 15 (1) ◽  
pp. 44-50 ◽  
Author(s):  
H Page ◽  
C Sirtori ◽  
S Barbieri ◽  
P Kruck ◽  
M Stellmacher ◽  
...  
Keyword(s):  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting ◽  
Light Emitting Devices

scholarly journals Deterministic Assembly of Arrays of Lithographically Defined WS2 and MoS2 Monolayer Features Directly From Multilayer Sources Into Van Der Waals Heterostructures

2019 ◽  
Vol 7 (4) ◽  
Author(s):  
Vu Nguyen ◽  
Hannah Gramling ◽  
Clarissa Towle ◽  
Wan Li ◽  
Der-Hsien Lien ◽  
...  
Keyword(s):  
2D Materials ◽  
Van Der Waals ◽  
High Yield ◽  
Release Process ◽  
Mechanical Exfoliation ◽  
Light Emitting ◽  
Synthesis Conditions ◽  
Light Emitting Devices ◽  
Mos2 Monolayer ◽  
Significant Step

Abstract One of the major challenges in the van der Waals (vdW) integration of two-dimensional (2D) materials is achieving high-yield and high-throughput assembly of predefined sequences of monolayers into heterostructure arrays. Mechanical exfoliation has recently been studied as a promising technique to transfer monolayers from a multilayer source synthesized by other techniques, allowing the deposition of a wide variety of 2D materials without exposing the target substrate to harsh synthesis conditions. Although a variety of processes have been developed to exfoliate the 2D materials mechanically from the source and place them deterministically onto a target substrate, they can typically transfer only either a wafer-scale blanket or one small flake at a time with uncontrolled size and shape. Here, we present a method to assemble arrays of lithographically defined monolayer WS2 and MoS2 features from multilayer sources and directly transfer them in a deterministic manner onto target substrates. This exfoliate–align–release process—without the need of an intermediate carrier substrate—is enabled by combining a patterned, gold-mediated exfoliation technique with a new optically transparent, heat-releasable adhesive. WS2/MoS2 vdW heterostructure arrays produced by this method show the expected interlayer exciton between the monolayers. Light-emitting devices using WS2 monolayers were also demonstrated, proving the functionality of the fabricated materials. Our work demonstrates a significant step toward developing mechanical exfoliation as a scalable dry transfer technique for the manufacturing of functional, atomically thin materials.

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