scholarly journals In situ synthesis of stretchable and highly stable multi-color carbon-dots/polyurethane composite films for light-emitting devices

RSC Advances ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 1281-1286 ◽  
Author(s):  
Fei Lian ◽  
Chuanxi Wang ◽  
Qian Wu ◽  
Minghui Yang ◽  
Zhenyu Wang ◽  
...  
Keyword(s):  
Polymer Films ◽  
Carbon Dots ◽  
Composite Films ◽  
Optoelectronic Devices ◽  
In Situ Synthesis ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Polyurethane Composite

Stretchable, mechanically stable multi-color carbon-dots-based polymer films are in situ fabricated, and showed potential for application in optoelectronic devices.

In situ synthesis of NIR-light emitting carbon dots derived from spinach for bio-imaging applications

2017 ◽  
Vol 5 (35) ◽  
pp. 7328-7334 ◽  
Author(s):  
Liping Li ◽  
Ruiping Zhang ◽  
Chunxiang Lu ◽  
Jinghua Sun ◽  
Lingjie Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Carbon Dots ◽  
In Situ Synthesis ◽  
Light Emitting ◽  
Nir Light ◽  
Bio Imaging ◽  
One Step

NIR-light emitting CDs (R-CDs) were prepared using spinach as a precursor by one-step solvothermal treatment. The R-CDs exhibited great optical properties, negligible toxicity, and superior labelling capability both in vitro and in vivo.

scholarly journals Microwave-assisted in situ large scale synthesis of a carbon dots@g-C3N4 composite phosphor for white light-emitting devices

2020 ◽  
Vol 4 (2) ◽  
pp. 517-523 ◽  
Author(s):  
Li Meng ◽  
Elena V. Ushakova ◽  
Zhengjie Zhou ◽  
Enshan Liu ◽  
Di Li ◽  
...  
Keyword(s):  
White Light ◽  
Carbon Dots ◽  
Power Efficiency ◽  
Large Scale ◽  
Heating Method ◽  
Light Emitting ◽  
White Leds ◽  
Light Emitting Devices ◽  
Microwave Assisted

A composite phosphor comprising carbon dots and g-C3N4 is prepared on a large scale through a green microwave assisted in situ heating method, and is used for fabrication of white LEDs with a power efficiency of up to 42 lm W−1.

scholarly journals Photostable and Uniform CH3NH3PbI3 Perovskite Film Prepared via Stoichiometric Modification and Solvent Engineering

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 405
Author(s):  
Daocheng Hong ◽  
Mingyi Xie ◽  
Yuxi Tian
Keyword(s):  
Solar Cells ◽  
Optoelectronic Devices ◽  
Solvent Engineering ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Coverage Ratio ◽  
Fabrication Procedure ◽  
Fabrication Condition ◽  
Halide Perovskites ◽  
Photoluminescence Efficiency

Solution-processed organometal halide perovskites (OMHPs) have been widely used in optoelectronic devices, and have exhibited brilliant performance. One of their generally recognized advantages is their easy fabrication procedure. However, such a procedure also brings uncertainty about the opto-electric properties of the final samples and devices, including morphology, stability, coverage ratio, and defect concentration. Normally, one needs to find a balanced condition, because there is a competitive relation between these parameters. In this work, we fabricated CH3NH3PbI3 films by carefully changing the ratio of the PbI2 to CH3NH3I, and found that the stoichiometric and solvent engineering not only determined the photoluminescence efficiency and defects in the materials, but also affected the photostability, morphology, and coverage ratio. Combining solvent engineering and the substitution of PbI2 by Pb(Ac)2, we obtained an optimized fabrication condition, providing uniform CH3NH3PbI3 films with both high photoluminescence efficiency and high photostability under either I-rich or Pb-rich conditions. These results provide an optimized fabrication procedure for CH3NH3PbI3 and other OMHP films, which is crucial for the performance of perovskite-based solar cells and light emitting devices.

One-pot synthesis of double silane-functionalized carbon dots with tunable emission and excellent coating properties for WLEDs application

2021 ◽  
Author(s):  
Wenbing Cao ◽  
Yuhan Wu ◽  
Xin Li ◽  
Xuanfeng Jiang ◽  
Yuhong Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Carbon Dots ◽  
Great Influence ◽  
Alkoxy Group ◽  
Color Temperature ◽  
Molar Ratio ◽  
Coating Properties ◽  
One Pot ◽  
Light Emitting ◽  
Light Emitting Devices

Abstract Silane-functionalized carbon dots (SiCDs) can be exploited as effective color converting materials for the solid-state light-emitting devices. However, most of SiCDs reported thus far have shown photoluminescence emissions in the blue and green spectral range, which limit them to construct an efficient white light-emitting diodes (WLEDs) due to the lack of long-wavelength emission. Herein, a series of double silane-functionalized carbon dots (DSiCDs) were prepared via a one-step solvothermal method. The results show that the organic functional group of the silane has great influence on the optical properties of DSiCDs and the number of alkoxy group in the silane has great influence on coating properties of DSiCDs. In addition, the DSiCDs prepared by (3-aminopropyl)triethoxysilane and N-[3-(Trimethoxysilyl)propyl]ethylenediamine with molar ratio of 7:3 show excellent optical properties with the maximum emission at 608 nm under 400 nm excitation. Furthermore, they can be completely dried within 1 h at room temperature to form fluorescent coating with high stability and strong adhesion to the substrate. Together with their excellent optical and coating properties, they can be directly coated on LED chips to prepare WLEDs, with a CIE coordinate of (0.33,0.31), color rendering index of 81.6, and color temperature of 5774 K.

2D materials beyond graphene toward Si integrated infrared optoelectronic devices

Nanoscale ◽  
2020 ◽  
Vol 12 (22) ◽  
pp. 11784-11807 ◽  
Author(s):  
Changyong Lan ◽  
Zhe Shi ◽  
Rui Cao ◽  
Chun Li ◽  
Han Zhang
Keyword(s):  
2D Materials ◽  
Optoelectronic Devices ◽  
Infrared Light ◽  
Optical Modulators ◽  
Light Emitting ◽  
Light Emitting Devices

A study of typical 2D materials beyond graphene suitable for infrared applications, in particular, infrared light emitting devices, optical modulators, and photodetectors.

Laser-induced in situ synthesis of Pd and Pt nanoparticles on polymer films

2016 ◽  
Vol 122 (12) ◽  
Author(s):  
Mehran Mehrabanian ◽  
Davide Morselli ◽  
Gianvito Caputo ◽  
Alice Scarpellini ◽  
Francisco Palazon ◽  
...  
Keyword(s):  
Polymer Films ◽  
Pt Nanoparticles ◽  
In Situ Synthesis

In-situ synthesis of flexible hybrid composite films for improved thermoelectric performance

2019 ◽  
Vol 357 ◽  
pp. 547-558 ◽  
Author(s):  
Hyeunhwan An ◽  
Matthew Pusko ◽  
Dongwon Chun ◽  
Sanghyun Park ◽  
Jaeyun Moon
Keyword(s):  
Hybrid Composite ◽  
Composite Films ◽  
In Situ Synthesis ◽  
Thermoelectric Performance

In Situ Inkjet Printing of the Perovskite Single-Crystal Array-Embedded Polydimethylsiloxane Film for Wearable Light-Emitting Devices

2020 ◽  
Vol 12 (19) ◽  
pp. 22157-22162 ◽  
Author(s):  
Zhenkun Gu ◽  
Zhandong Huang ◽  
Xiaotian Hu ◽  
Ying Wang ◽  
Lihong Li ◽  
...  
Keyword(s):  
Single Crystal ◽  
Inkjet Printing ◽  
Light Emitting ◽  
Light Emitting Devices

Heteroepitaxy of GaN on Silicon: In Situ Measurements

2005 ◽  
Vol 483-485 ◽  
pp. 1051-1056
Author(s):  
A. Krost ◽  
Armin Dadgar ◽  
F. Schulze ◽  
R. Clos ◽  
K. Haberland ◽  
...  
Keyword(s):  
Low Cost ◽  
Group Iii Nitrides ◽  
In Situ Monitoring ◽  
Attractive Alternative ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices ◽  
Thermal Expansion Coefficients ◽  
Long Time

Due to the lack of GaN wafers, so far, group-III nitrides are mostly grown on sapphire or SiC substrates. Silicon offers an attractive alternative because of its low cost, large wafer area, and physical benefits such as the possibility of chemical etching, lower hardness, good thermal conductivity, and electrical conducting or isolating for light emitting devices or transistor structures, respectively. However, for a long time, a technological breakthrough of GaN-on-silicon has been thought to be impossible because of the cracking problem originating in the huge difference of the thermal expansion coefficients between GaN and silicon which leads to tensile strain and cracking of the layers when cooling down. However, in recent years, several approaches to prevent cracking and wafer bowing have been successfully applied. Nowadays, device-relevant thicknesses of crackfree group-III-nitrides can be grown on silicon. To reach this goal the most important issues were the identification of the physical origin of strains and its engineering by means of in situ monitoring during metalorganic vapor phase epitaxy.

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