Organolanthanide-based infrared-light-emitting devices

2000 ◽  
Author(s):  
William P. Gillin ◽  
Richard J. Curry
Keyword(s):  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

2D materials beyond graphene toward Si integrated infrared optoelectronic devices

Nanoscale ◽  
2020 ◽  
Vol 12 (22) ◽  
pp. 11784-11807 ◽  
Author(s):  
Changyong Lan ◽  
Zhe Shi ◽  
Rui Cao ◽  
Chun Li ◽  
Han Zhang
Keyword(s):  
2D Materials ◽  
Optoelectronic Devices ◽  
Infrared Light ◽  
Optical Modulators ◽  
Light Emitting ◽  
Light Emitting Devices

A study of typical 2D materials beyond graphene suitable for infrared applications, in particular, infrared light emitting devices, optical modulators, and photodetectors.

Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires

2017 ◽  
Vol 5 (10) ◽  
pp. 2542-2551 ◽  
Author(s):  
Gao-Hang He ◽  
Ming-Ming Jiang ◽  
Lin Dong ◽  
Zhen-Zhong Zhang ◽  
Bing-Hui Li ◽  
...  
Keyword(s):  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Doped Zno

Electrically driven near-infrared light-emission from individual heavily Ga-doped ZnO microwires has been achieved, which can be analogous to incandescent sources.

Rare earth doped Si-rich ZnO for multiband near-infrared light emitting devices

2012 ◽  
Vol 101 (19) ◽  
pp. 191115 ◽  
Author(s):  
Emanuele Francesco Pecora ◽  
Thomas I. Murphy ◽  
Luca Dal Negro
Keyword(s):  
Rare Earth ◽  
Near Infrared ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Rare Earth Doped

Design and operation of mid-infrared light-emitting devices (lambdaapprox11 µm) based on a chirped superlattice

2000 ◽  
Vol 15 (1) ◽  
pp. 44-50 ◽  
Author(s):  
H Page ◽  
C Sirtori ◽  
S Barbieri ◽  
P Kruck ◽  
M Stellmacher ◽  
...  
Keyword(s):  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting ◽  
Light Emitting Devices

scholarly journals Suppression of Electric Field-Induced Segregation in Sky-Blue Perovskite Light-Emitting Electrochemical Cells

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 1937
Author(s):  
Tatiana G. Liashenko ◽  
Anatoly P. Pushkarev ◽  
Arnas Naujokaitis ◽  
Vidas Pakštas ◽  
Marius Franckevičius ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Film Deposition ◽  
Infrared Light ◽  
Electrochemical Cells ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Turn On

Inexpensive perovskite light-emitting devices fabricated by a simple wet chemical approach have recently demonstrated very prospective characteristics such as narrowband emission, low turn-on bias, high brightness, and high external quantum efficiency of electroluminescence, and have presented a good alternative to well-established technology of epitaxially grown III-V semiconducting alloys. Engineering of highly efficient perovskite light-emitting devices emitting green, red, and near-infrared light has been demonstrated in numerous reports and has faced no major fundamental limitations. On the contrary, the devices emitting blue light, in particular, based on 3D mixed-halide perovskites, suffer from electric field-induced phase separation (segregation). This crystal lattice defect-mediated phenomenon results in an undesirable color change of electroluminescence. Here we report a novel approach towards the suppression of the segregation in single-layer perovskite light-emitting electrochemical cells. Co-crystallization of direct band gap CsPb(Cl,Br)3 and indirect band gap Cs4Pb(Cl,Br)6 phases in the presence of poly(ethylene oxide) during a thin film deposition affords passivation of surface defect states and an increase in the density of photoexcited charge carriers in CsPb(Cl,Br)3 grains. Furthermore, the hexahalide phase prevents the dissociation of the emissive grains in the strong electric field during the device operation. Entirely resistant to 5.7 × 106 V·m−1 electric field-driven segregation light-emitting electrochemical cell exhibits stable emission at wavelength 479 nm with maximum external quantum efficiency 0.7%, maximum brightness 47 cd·m−2, and turn-on bias of 2.5 V.

GaSb-based Nanocomposites as IR-Emitters

2002 ◽  
Vol 737 ◽  
Author(s):  
Ludmila Bakueva ◽  
Sergei Musikhin ◽  
Edward H. Sargent ◽  
Stephan Schulz
Keyword(s):  
Communication Systems ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Strongly Nonlinear ◽  
Current Voltage ◽  
Optical Communication Systems ◽  
Capacitance Voltage ◽  
Nonlinear Character ◽  
Current Voltage Characteristics

ABSTRACTNanocomposites consisting of GaSb nanocrystals in a conducting polymer matrix were fabricated and investigated. The current-voltage characteristics of the nanocomposite-based diode structures have a symmetric but strongly nonlinear character. Capacitance-voltage characteristics of the structures were investigated both in the dark and under illumination and compared with those of a pure polymer. At applied voltages exceeding 7–10 V (for different samples) electroluminescence begins and steeply increases. The position of the maximum of the measured electroluminescence spectra can be made to vary in the 1.3 – 1.6 μm wavelengths region by changing nanocrystal size. Photoluminescence spectra have a maximum nearly coinciding with that of electroluminescence but of considerably larger width. The results demonstrate the promise of GaSb-based nanocomposites for infrared light-emitting devices operating in the 1.3–1.6 μm spectral region used in optical communication systems.

High-Performance Shortwave-Infrared Light-Emitting Devices Using Core-Shell (PbS-CdS) Colloidal Quantum Dots

2015 ◽  
Vol 27 (8) ◽  
pp. 1437-1442 ◽  
Author(s):  
Geoffrey J. Supran ◽  
Katherine W. Song ◽  
Gyu Weon Hwang ◽  
Raoul E. Correa ◽  
Jennifer Scherer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
Colloidal Quantum Dots ◽  
Infrared Light ◽  
Core Shell ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Shortwave Infrared
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