CVD growth of large-area InS atomic layers and device applications

Nanoscale ◽  
2020 ◽  
Vol 12 (17) ◽  
pp. 9366-9374 ◽  
Author(s):  
Chien-Liang Tu ◽  
Kuang-I Lin ◽  
Jiang Pu ◽  
Tsai-Fu Chung ◽  
Chien-Nan Hsiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Indium Sulfide ◽  
Large Area ◽  
Mica Substrate ◽  
Device Applications ◽  
Cvd Growth

Indium sulfide (InS) atomic layers made by chemical vapor deposition (CVD) are synthesized onto a mica substrate, producing a highly crystalline, large-area, and atomically thin-film InS flakes.

Photoelectron Spectroscopic Imaging and Device Applications of Large-Area Patternable Single-Layer MoS2Synthesized by Chemical Vapor Deposition

ACS Nano ◽  
2014 ◽  
Vol 8 (5) ◽  
pp. 4961-4968 ◽  
Author(s):  
Woanseo Park ◽  
Jaeyoon Baik ◽  
Tae-Young Kim ◽  
Kyungjune Cho ◽  
Woong-Ki Hong ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Layer ◽  
Chemical Vapor ◽  
Spectroscopic Imaging ◽  
Large Area ◽  
Device Applications

Metallorganic Chemical Vapor Deposition of SrS:Ce for Thin Film Electroluminescent Device Applications

2000 ◽  
Vol 147 (6) ◽  
pp. 2174 ◽  
Author(s):  
Karl W. Barth ◽  
Janice E. Lau ◽  
Gregory G. Peterson ◽  
Denis Endisch ◽  
Alain E. Kaloyeros ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electroluminescent Device ◽  
Device Applications

Optimization of Chemical Vapor Deposition Process

2006 ◽  
Author(s):  
Pradeep George ◽  
Hae Chang Gea ◽  
Yogesh Jaluria
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Response Surface ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Transport Processes ◽  
Operating Conditions ◽  
Design Parameters ◽  
Large Area

Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

Large-area synthesis of transition metal dichalcogenides via CVD and solution-based approaches and their device applications

Nanoscale ◽  
2021 ◽  
Author(s):  
Anh Tuan Hoang ◽  
Kairui Qu ◽  
Xiang Chen ◽  
Jong-Hyun Ahn
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Large Area ◽  
Wafer Scale ◽  
Metal Dichalcogenides ◽  
Device Applications

This article reviews the latest advances in the synthesis of wafer-scale thin films using chemical vapor deposition and solution-based methods and various device applications.

Wetting behaviors and applications of metal-catalyzed CVD grown graphene

2018 ◽  
Vol 6 (45) ◽  
pp. 22437-22464 ◽  
Author(s):  
Afzal Khan ◽  
Mohammad Rezwan Habib ◽  
Rishi Ranjan Kumar ◽  
Sk Masiul Islam ◽  
V. Arivazhagan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
High Quality ◽  
Graphene Films ◽  
Cvd Growth ◽  
Grown Graphene ◽  
Metal Catalyzed ◽  
Wetting Behaviors

Metal-catalyzed chemical vapor deposition (CVD) growth of graphene is one of the most important techniques to produce high quality and large area graphene films.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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