Field-Effect Pump: Liquid Dielectrophoresis along a Virtual Microchannel with Source-Gate-Drain Electric Fields

Lab on a Chip ◽  
2021 ◽  
Author(s):  
Fu-Min Wang ◽  
I-Pei Lu ◽  
Chih-Ting Lin ◽  
Shey-Shi Lu ◽  
SHIH-KANG FAN
Keyword(s):  
Electric Fields ◽  
Field Effect ◽  
Parallel Plates ◽  
Liquid Dielectrophoresis

Liquid dielectrophoresis (LDEP) is investigated to implement field-effect pumps (FEPs) that drive liquids from source, via gate, toward drain electric fields between parallel plates without external pumps or the problem...

Enhanced Mobility of Organic Field-Effect Transistors with Epitaxially Grown C60 Film by in-situ Heat Treatment of the Organic Dielectric

2005 ◽  
Vol 871 ◽  
Author(s):  
Th. B. Singh ◽  
N. Marjanovic ◽  
G. J. Matt ◽  
S. Günes ◽  
N. S. Sariciftci ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Fields ◽  
Field Effect ◽  
Film Growth ◽  
Field Effect Transistors ◽  
Growth Conditions ◽  
Initial Growth ◽  
Organic Field Effect Transistors ◽  
Enhanced Mobility ◽  
High Electric Fields

AbstractElectron mobilities were studied as a function of thin-film growth conditions in hot wall epitaxially grown C60 based field-effect transistors. Mobilities in the range of ∼ 0.5 to 6 cm2/Vs are obtained depending on the thin-film morphology arising from the initial growth conditions. Moreover, the field-effect transistor current is determined by the morphology of the film at the interface with the dielectric, while the upper layers are less relevant to the transport. At high electric fields, a non-linear transport has been observed. This effect is assigned to be either because of the dominance of the contact resistance over the channel resistance or because of the gradual move of the Fermi level towards the band edge as more and more empty traps are filled due to charge injection.

Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs

2014 ◽  
Vol 778-780 ◽  
pp. 583-586 ◽  
Author(s):  
Christian Strenger ◽  
Viktoryia Uhnevionak ◽  
Vincent Mortet ◽  
Guillermo Ortiz ◽  
Tobias Erlbacher ◽  
...  
Keyword(s):  
Electric Fields ◽  
Hall Mobility ◽  
Field Effect ◽  
Systematic Analysis ◽  
Channel Mobility ◽  
Scattering Mechanisms ◽  
Low Field ◽  
High Electric Fields ◽  
Doping Profiles ◽  
The Impact

In this work, we investigate the impact of Al-implantation into n-MOSFET channel regions together with its p-doping concentration upon the mobility limiting scattering mechanisms in the channel. For this purpose, a study of the interface trap density, interface trapped charge density, field-effect mobility, and Hall mobility is carried out for normally-off n-MOSFETs with different doping profiles and concentrations in the channel region. The trend of the field-effect and the Hall mobility as well as the differences thereof will be discussed. Based on the determined mobilities in the range from 11.9 cm2/Vs to 92.4 cm2/Vs, it will be shown that for p-doping concentrations above 5·1016 cm-3 Coulomb scattering is the dominant scattering mechanism for both, low- and high-field mobility. In contrast, for p-doping concentrations below 5·1016, cm-3 further scattering mechanisms will be considered that may account for the observed mobility trend at high electric fields.

scholarly journals Vibration Damping of a New Ionic Liquid under Electric Field Effect

10.14311/714 ◽  
2005 ◽  
Vol 45 (3) ◽  
Author(s):  
M. M. A. Bicak ◽  
H. T. Belek ◽  
A. Göksenli
Keyword(s):  
Electrical Conductivity ◽  
Ionic Liquid ◽  
Electric Fields ◽  
Smart Materials ◽  
Field Effect ◽  
Rheological Behaviour ◽  
Vibration Damping ◽  
Electric Field Effect ◽  
High Electrical Conductivity ◽  
Electrical Fields

Ionic liquids are recently-developed smart materials that are not well known by mechanical engineers. They are of great interest due to their non-volatility, viscosity and extremely high electrical conductivity. Up to now, no reports have appeared on their rheological properties under magnetic or electrical fields. In this work, we study the electro-rheological behaviour of a newly presented ionic liquid (2-hydroxyethylammonium formate). Our experiments show that the ionic liquid is not sensitive to magnetic fields. Nevertheless, resonably high damping ratios (42.8%) have been attained under relatively low electric fields (0.6 kVcm-1).

Intrasubband 1.55 μm Electrooptical Modulation in SiGe Asymmetric Quantum Well Structures

1993 ◽  
Vol 298 ◽  
Author(s):  
Lionel R. Friedman ◽  
Richard A. Soref
Keyword(s):  
Quantum Well ◽  
Electric Fields ◽  
Field Effect ◽  
Narrow Linewidth ◽  
Microwave Response ◽  
Optical Extinction ◽  
Quantum Well Structures ◽  
Electrooptic Modulator ◽  
Asymmetric Quantum ◽  
Optoelectronic Integration

AbstractA new, fast, intrasubband 1.55 μm electrooptic modulator in the SiGe/Si/CaF2-on-Si steppedquantum- well system is proposed and analyzed. At electric fields of ±8 V/μm, resonant 1-3 conduction intrasubband absorption is predicted to give 18 dB of optical extinction for narrow-linewidth transitions. We expect this field effect modulator to have microwave response, plus compatibility with Si-based optoelectronic integration.

Nanomanufacturing Using Electrospinning

2009 ◽  
Vol 131 (3) ◽  
Author(s):  
Leon M. Bellan ◽  
Harold G. Craighead
Keyword(s):  
Electric Fields ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Solvent Evaporation ◽  
Mechanical Motion ◽  
Melt Electrospinning ◽  
Recent Developments ◽  
Low Mass ◽  
Nanoscale Features

Electrospinning has become a popular technique for fabricating nanofibers from a variety of materials and has been tailored for a multitude of applications. These nanofibers may be used as devices (e.g., biosensors, field effect transistors (FETs), and resonators) or may be used to fabricate nanoscale features in other materials. Several methods for controlling the orientation of deposited fibers have been demonstrated, including linear and rotary mechanical motion, using prepatterned electrodes on a substrate to attract the fibers, and using electric fields to alter the path of the electrospinning jet in-flight. Electrospinning systems employing more complex tip geometries have been investigated. Several techniques have been developed to overcome the problem of low mass throughput, including using large arrays of electrospinning tips fed by the same solution and various tipless electrospinning techniques. The electrospinning tip has also been modified to produce either side-by-side or coaxial multicomponent fibers and tubes. The mechanism by which the fluid jet solidifies into fibers has also been varied, and though most electrospinning experiments still rely upon in-flight solvent evaporation for solidification, melt electrospinning and in-flight polymerization have also been investigated. This article will review recent developments in electrospinning techniques and applications.

scholarly journals Molybdenum Disulfide Field Effect Transistors under Electron Beam Irradiation and External Electric Fields

2020 ◽  
Vol 4 (1) ◽  
pp. 25
Author(s):  
Aniello Pelella ◽  
Alessandro Grillo ◽  
Enver Faella ◽  
Filippo Giubileo ◽  
Francesca Urban ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molybdenum Disulfide ◽  
Field Emission ◽  
Electric Fields ◽  
Field Effect ◽  
Electron Beam Irradiation ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Beam Irradiation ◽  
Back Gate

In this work, monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor deposition onto SiO2/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. We study their electric characteristics from 10−6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Moreover, Schottky metal contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) are investigated under electron beam irradiation conditions. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance. It is shown that e-beam irradiation lowers the Schottky barrier at the contacts due to thermally induced atom diffusion and interfacial reactions. The study demonstrates that electron beam irradiation can be effectively used for contact improvement though local annealing. It is also demonstrated that the application of an external field by a metallic nanotip induces a field emission current, which can be modulated by the voltage applied to the Si substrate back-gate. Such a finding, that we attribute to gate-bias lowering of the MoS2 electron affinity, enables a new field-effect transistor based on field emission.

scholarly journals Low-Energy Ion Transport Between Two Insulating Parallel Plates

2021 ◽  
Author(s):  
R. D. DuBois ◽  
K. Tőkési ◽  
E. Giglio
Keyword(s):  
Experimental Data ◽  
Ion Transport ◽  
Electric Fields ◽  
Weighted Average ◽  
Electric Circuit ◽  
Low Energy ◽  
Beam Intensity ◽  
Parallel Plates ◽  
Charge Decay ◽  
Singly Charged

Abstract Experimental data are presented for low-energy singly charged ion transport between two insulating parallel plates. Using a beam intensity of approximately 20 pA, measurements of the incoming and transmitted beams provide quantitative temporal information about the charge deposited on the plates and the guiding probability. Using a smaller beam intensity (~1 pA) plate charging and discharging properties were studied as a function of time. These data imply that both the charge deposition and decay along the surface and through the bulk need to be modeled as acting independently rather than as a combined weighted average. A further reduction of beam intensity to ~25 fA allowed temporal imaging studies of the positions and intensities of the guided beam plus two bypass beams to be performed. Because of the parallel plate geometry, SIMION software was used to simulate trajectories of the guided and bypass beams. This provides information about the amount and location of deposited charge and, as a function of charge patch voltage, the probability of beam guiding and how much the bypass beams are deflected. Information about the electric fields which provides insights into the relative charge decay via the surface and bulk is also obtained. An equivalent electric circuit model of the parallel plates is used to associate the deposited charge with the patch voltage. To achieve internal consistency between the various sets of experimental data and the SIMION information, the deposited charge is implied to be distributed primarily on the inner surface of the plates, transverse to the beam direction, rather than being distributed throughout the entire plate.

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