A direct gate field-effect transistor for the measurement of DC electric fields

1985 ◽  
Vol 32 (3) ◽  
pp. 716-717 ◽  
Author(s):  
M.N. Horenstein
Keyword(s):  
Electric Fields ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Dc Electric Fields

Analytical Modelling and Simulation of Triple Material Quadruple Gate Tunnel Field Effect Transistors

2018 ◽  
Vol 54 ◽  
pp. 146-157 ◽  
Author(s):  
T.S. Arun Samuel ◽  
S. Komalavalli
Keyword(s):  
Electric Fields ◽  
Approximation Method ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrostatic Model ◽  
Parabolic Approximation ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Diagnostic Outcomes

We build up the electrostatic model for Triple Material Quadruple Gate (TMQG) Tunnel Field Effect Transistor of rectangular cross area, in view of semi 3D strategy in this paper. The Parabolic approximation method is utilized to tackle the 2-D Poisson condition with appropriate device boundary conditions and logical articulations for surface potential and electric fields are determined. The electric field dispersion is additionally used to ascertain the tunneling generation rate. The created show furnishes the plan rules of TMQG with enhanced IONcurrent. The diagnostic outcomes are contrasted and TCAD recreation comes about.

A Manipulation of Semiconducting GaN Nanowires by Dielectrophoresis Aligned Assembly Deposition (DAAD)

2007 ◽  
Vol 556-557 ◽  
pp. 1023-1026
Author(s):  
Seung Yong Lee ◽  
Tae Hong Kim ◽  
Duk Il Suh ◽  
Ji Eun Park ◽  
Eun Kyung Suh ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Yield ◽  
Semiconducting Nanowires ◽  
Gan Nanowires ◽  
Yield Rate ◽  
Ac Electric Field ◽  
Effect Transistor

We report on investigation of the AC dielectrophoresis aligned assembly deposition (DAAD) of gallium nitride nanowires (GaN NWs) with both the variation of the electric field and the frequency. Our DAAD methods were used to align and manipulate GaN nanowires as well as to extract the electrical properties of semiconducting nanowires. We observed that the ability of the alignment strongly depends on the magnitude of the AC electric field and frequencies. For the higher AC peak-to-peak electric fields (up to 20 Vp-p), the GaN nanowires have a better alignment across the patterned Ti / Au electrodes with a high yield rate of ~ 90% over the entire arrays (in our case, 20 arrays) in the chip at the 20 kHz. From the transport measurements of our AC aligned GaN nanowires using conventional three-probe schemes in field-effect transistor structures, we found that the conductance of the GaN NWs increased for gating voltage greater than zero and decreased for gating voltage less than zero, indicating these GaN nanowires have n-type dopants.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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