Threshold electric fields controlled by surface treatments in KTaO3 field-effect transistors

2010 ◽  
Vol 107 (7) ◽  
pp. 074508 ◽  
Author(s):  
H. Nakamura ◽  
T. Kimura
Keyword(s):  
Electric Fields ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Surface Treatments

Enhanced Mobility of Organic Field-Effect Transistors with Epitaxially Grown C60 Film by in-situ Heat Treatment of the Organic Dielectric

2005 ◽  
Vol 871 ◽  
Author(s):  
Th. B. Singh ◽  
N. Marjanovic ◽  
G. J. Matt ◽  
S. Günes ◽  
N. S. Sariciftci ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Fields ◽  
Field Effect ◽  
Film Growth ◽  
Field Effect Transistors ◽  
Growth Conditions ◽  
Initial Growth ◽  
Organic Field Effect Transistors ◽  
Enhanced Mobility ◽  
High Electric Fields

AbstractElectron mobilities were studied as a function of thin-film growth conditions in hot wall epitaxially grown C60 based field-effect transistors. Mobilities in the range of ∼ 0.5 to 6 cm2/Vs are obtained depending on the thin-film morphology arising from the initial growth conditions. Moreover, the field-effect transistor current is determined by the morphology of the film at the interface with the dielectric, while the upper layers are less relevant to the transport. At high electric fields, a non-linear transport has been observed. This effect is assigned to be either because of the dominance of the contact resistance over the channel resistance or because of the gradual move of the Fermi level towards the band edge as more and more empty traps are filled due to charge injection.

Nanomanufacturing Using Electrospinning

2009 ◽  
Vol 131 (3) ◽  
Author(s):  
Leon M. Bellan ◽  
Harold G. Craighead
Keyword(s):  
Electric Fields ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Solvent Evaporation ◽  
Mechanical Motion ◽  
Melt Electrospinning ◽  
Recent Developments ◽  
Low Mass ◽  
Nanoscale Features

Electrospinning has become a popular technique for fabricating nanofibers from a variety of materials and has been tailored for a multitude of applications. These nanofibers may be used as devices (e.g., biosensors, field effect transistors (FETs), and resonators) or may be used to fabricate nanoscale features in other materials. Several methods for controlling the orientation of deposited fibers have been demonstrated, including linear and rotary mechanical motion, using prepatterned electrodes on a substrate to attract the fibers, and using electric fields to alter the path of the electrospinning jet in-flight. Electrospinning systems employing more complex tip geometries have been investigated. Several techniques have been developed to overcome the problem of low mass throughput, including using large arrays of electrospinning tips fed by the same solution and various tipless electrospinning techniques. The electrospinning tip has also been modified to produce either side-by-side or coaxial multicomponent fibers and tubes. The mechanism by which the fluid jet solidifies into fibers has also been varied, and though most electrospinning experiments still rely upon in-flight solvent evaporation for solidification, melt electrospinning and in-flight polymerization have also been investigated. This article will review recent developments in electrospinning techniques and applications.

scholarly journals Molybdenum Disulfide Field Effect Transistors under Electron Beam Irradiation and External Electric Fields

2020 ◽  
Vol 4 (1) ◽  
pp. 25
Author(s):  
Aniello Pelella ◽  
Alessandro Grillo ◽  
Enver Faella ◽  
Filippo Giubileo ◽  
Francesca Urban ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molybdenum Disulfide ◽  
Field Emission ◽  
Electric Fields ◽  
Field Effect ◽  
Electron Beam Irradiation ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Beam Irradiation ◽  
Back Gate

In this work, monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor deposition onto SiO2/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. We study their electric characteristics from 10−6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Moreover, Schottky metal contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) are investigated under electron beam irradiation conditions. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance. It is shown that e-beam irradiation lowers the Schottky barrier at the contacts due to thermally induced atom diffusion and interfacial reactions. The study demonstrates that electron beam irradiation can be effectively used for contact improvement though local annealing. It is also demonstrated that the application of an external field by a metallic nanotip induces a field emission current, which can be modulated by the voltage applied to the Si substrate back-gate. Such a finding, that we attribute to gate-bias lowering of the MoS2 electron affinity, enables a new field-effect transistor based on field emission.

Improved Morphology and Performance from Surface Treatments of Naphthalenetetracarboxylic Diimide Bottom Contact Field-Effect Transistors

2009 ◽  
Vol 1 (8) ◽  
pp. 1763-1769 ◽  
Author(s):  
Jia Sun ◽  
Rod Devine ◽  
Bal M. Dhar ◽  
Byung Jun Jung ◽  
Kevin C. See ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Surface Treatments ◽  
Bottom Contact ◽  
And Performance ◽  
Contact Field

Organic Field-Effect Transistors, Inverters, and Logic Circuits on Gate Electrets

2005 ◽  
Vol 889 ◽  
Author(s):  
Cheng Huang ◽  
James E. West ◽  
Howard E. Katz
Keyword(s):  
Organic Semiconductors ◽  
Electric Fields ◽  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Circuits ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Electronic Components ◽  
Assembled Monolayers

ABSTRACTBy incorporating dielectrics with stored electric fields and organic semiconductors, new organic electronic components such as circuits with controlling voltages “restored” for transistor tuning can be developed. We have successfully used excellent electret materials including charged and surface-treated silicon dioxide (SiO2) and silsesquioxane (SSQ) polymers as the dielectric layer in organic field-effect transistors (OFETs). Charge injection and quasipermanent charge storage induce threshold voltage shifts and current modulation, which results from the built-in electric fields in the conduction channels. Static and dynamic characteristics of organic thin-film transistors (OTFTs) such as charging conditions and voltage/current retention were evaluated. In addition, self-assembled monolayers (SAMs) of dipolar molecules have been utilized in the dielectric layer, with different mechanisms but similar effects compared to charged dielectrics. We also present new OFET unipolar inverters, comprised of only two simple OTFTs with enhancement-mode driver and depletion-mode load to implement full-swing organic logic circuits for process simplification of electronic components in organic electronics.

Analytical Modelling and Simulation of Triple Material Quadruple Gate Tunnel Field Effect Transistors

2018 ◽  
Vol 54 ◽  
pp. 146-157 ◽  
Author(s):  
T.S. Arun Samuel ◽  
S. Komalavalli
Keyword(s):  
Electric Fields ◽  
Approximation Method ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrostatic Model ◽  
Parabolic Approximation ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Diagnostic Outcomes

We build up the electrostatic model for Triple Material Quadruple Gate (TMQG) Tunnel Field Effect Transistor of rectangular cross area, in view of semi 3D strategy in this paper. The Parabolic approximation method is utilized to tackle the 2-D Poisson condition with appropriate device boundary conditions and logical articulations for surface potential and electric fields are determined. The electric field dispersion is additionally used to ascertain the tunneling generation rate. The created show furnishes the plan rules of TMQG with enhanced IONcurrent. The diagnostic outcomes are contrasted and TCAD recreation comes about.

scholarly journals Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors

2021 ◽  
Vol 129 (7) ◽  
pp. 075702
Author(s):  
I. U. Jayawardhena ◽  
R. P. Ramamurthy ◽  
D. Morisette ◽  
A. C. Ahyi ◽  
R. Thorpe ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Surface Treatments ◽  
Oxide Semiconductor ◽  
Effect Of Surface
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