Nanomanufacturing Using Electrospinning

Author(s):  
Leon M. Bellan ◽  
Harold G. Craighead

Electrospinning has become a popular technique for fabricating nanofibers from a variety of materials and has been tailored for a multitude of applications. These nanofibers may be used as devices (e.g., biosensors, field effect transistors (FETs), and resonators) or may be used to fabricate nanoscale features in other materials. Several methods for controlling the orientation of deposited fibers have been demonstrated, including linear and rotary mechanical motion, using prepatterned electrodes on a substrate to attract the fibers, and using electric fields to alter the path of the electrospinning jet in-flight. Electrospinning systems employing more complex tip geometries have been investigated. Several techniques have been developed to overcome the problem of low mass throughput, including using large arrays of electrospinning tips fed by the same solution and various tipless electrospinning techniques. The electrospinning tip has also been modified to produce either side-by-side or coaxial multicomponent fibers and tubes. The mechanism by which the fluid jet solidifies into fibers has also been varied, and though most electrospinning experiments still rely upon in-flight solvent evaporation for solidification, melt electrospinning and in-flight polymerization have also been investigated. This article will review recent developments in electrospinning techniques and applications.

2008 ◽  
Vol 18 (04) ◽  
pp. 913-922 ◽  
Author(s):  
SIDDHARTH RAJAN ◽  
UMESH K. MISHRA ◽  
TOMÁS PALACIOS

This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.


2020 ◽  
Vol 8 (47) ◽  
pp. 16691-16715
Author(s):  
Yu Liu ◽  
Ping-An Chen ◽  
Yuanyuan Hu

Recent developments in fabrication strategies and device performance of field-effect transistors based on metal halide perovskites are reviewed.


2005 ◽  
Vol 871 ◽  
Author(s):  
Th. B. Singh ◽  
N. Marjanovic ◽  
G. J. Matt ◽  
S. Günes ◽  
N. S. Sariciftci ◽  
...  

AbstractElectron mobilities were studied as a function of thin-film growth conditions in hot wall epitaxially grown C60 based field-effect transistors. Mobilities in the range of ∼ 0.5 to 6 cm2/Vs are obtained depending on the thin-film morphology arising from the initial growth conditions. Moreover, the field-effect transistor current is determined by the morphology of the film at the interface with the dielectric, while the upper layers are less relevant to the transport. At high electric fields, a non-linear transport has been observed. This effect is assigned to be either because of the dominance of the contact resistance over the channel resistance or because of the gradual move of the Fermi level towards the band edge as more and more empty traps are filled due to charge injection.


2020 ◽  
Vol 4 (1) ◽  
pp. 25
Author(s):  
Aniello Pelella ◽  
Alessandro Grillo ◽  
Enver Faella ◽  
Filippo Giubileo ◽  
Francesca Urban ◽  
...  

In this work, monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor deposition onto SiO2/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. We study their electric characteristics from 10−6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Moreover, Schottky metal contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) are investigated under electron beam irradiation conditions. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance. It is shown that e-beam irradiation lowers the Schottky barrier at the contacts due to thermally induced atom diffusion and interfacial reactions. The study demonstrates that electron beam irradiation can be effectively used for contact improvement though local annealing. It is also demonstrated that the application of an external field by a metallic nanotip induces a field emission current, which can be modulated by the voltage applied to the Si substrate back-gate. Such a finding, that we attribute to gate-bias lowering of the MoS2 electron affinity, enables a new field-effect transistor based on field emission.


2005 ◽  
Vol 889 ◽  
Author(s):  
Cheng Huang ◽  
James E. West ◽  
Howard E. Katz

ABSTRACTBy incorporating dielectrics with stored electric fields and organic semiconductors, new organic electronic components such as circuits with controlling voltages “restored” for transistor tuning can be developed. We have successfully used excellent electret materials including charged and surface-treated silicon dioxide (SiO2) and silsesquioxane (SSQ) polymers as the dielectric layer in organic field-effect transistors (OFETs). Charge injection and quasipermanent charge storage induce threshold voltage shifts and current modulation, which results from the built-in electric fields in the conduction channels. Static and dynamic characteristics of organic thin-film transistors (OTFTs) such as charging conditions and voltage/current retention were evaluated. In addition, self-assembled monolayers (SAMs) of dipolar molecules have been utilized in the dielectric layer, with different mechanisms but similar effects compared to charged dielectrics. We also present new OFET unipolar inverters, comprised of only two simple OTFTs with enhancement-mode driver and depletion-mode load to implement full-swing organic logic circuits for process simplification of electronic components in organic electronics.


2018 ◽  
Vol 54 ◽  
pp. 146-157 ◽  
Author(s):  
T.S. Arun Samuel ◽  
S. Komalavalli

We build up the electrostatic model for Triple Material Quadruple Gate (TMQG) Tunnel Field Effect Transistor of rectangular cross area, in view of semi 3D strategy in this paper. The Parabolic approximation method is utilized to tackle the 2-D Poisson condition with appropriate device boundary conditions and logical articulations for surface potential and electric fields are determined. The electric field dispersion is additionally used to ascertain the tunneling generation rate. The created show furnishes the plan rules of TMQG with enhanced IONcurrent. The diagnostic outcomes are contrasted and TCAD recreation comes about.


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