Intrinsically low thermal conductivity in a p-type semiconductor SrOCuBiSe2 with a [SrO]-intercalated CuBiSe2 structure

2020 ◽  
Vol 56 (31) ◽  
pp. 4356-4359 ◽  
Author(s):  
Mengjia Luo ◽  
Kejun Bu ◽  
Xian Zhang ◽  
Jian Huang ◽  
Ruiqi Wang ◽  
...  

An intrinsically low thermal conductivity is observed in a new p-type semiconductor SrOCuBiSe2 which combines the dual effect of Bi 6s2 lone-pair electrons and rattling vibration of Cu atoms.

ChemPhysChem ◽  
2015 ◽  
Vol 16 (15) ◽  
pp. 3264-3270 ◽  
Author(s):  
Yongkwan Dong ◽  
Artem R. Khabibullin ◽  
Kaya Wei ◽  
James R. Salvador ◽  
George S. Nolas ◽  
...  

2020 ◽  
Vol 58 (5) ◽  
pp. 340-347
Author(s):  
Sung-Yoon Kim ◽  
Ji-Hee Pi ◽  
Go-Eun Lee ◽  
Il-Ho Kim

Tetrahedrite (C<sub>12</sub>Sb<sub>4</sub>S<sub>13</sub>) has attracted attention as a p-type thermoeletric material with very low thermal conductivity induced by the anharmonic oscillation of Cu due to the lone-pair electrons of Sb. Many studies have been conducted to improve its thermoelectric performance by partially substituting the transition elements for the Cu sites. In this study, Fe-doped tetrahedrites Cu<sub>12-x</sub>Fe<sub>x</sub>Sb<sub>4</sub>S<sub>13</sub> (x = 0.1-0.4) were prepared by mechanical alloying and hot pressing. The tetrahedrite phase was successfully synthesized by mechanical alloying without post-annealing and exhibited stability even without phase transition after hot pressing. Moreover, the Fe content was observed to be directly proportional to the lattice constant, which confirmed the Fe substitutions on the Cu sites. The electrical conductivity was observed to decrease with the increase in the Seebeck coefficient due to the charge compensation caused by Fe doping (electron donation). The highest power factor was 0.84 mWm<sup>-1</sup>K<sup>-2</sup> at 723 K for the specimen with x = 0.1; however, it decreased with an increase in Fe content. In addition, as the Fe content increased, the electronic thermal conductivity decreased. Thus, the lowest thermal conductivity value was obtained for the specimen with x = 0.4 (0.45–0.64 Wm<sup>-1</sup>K<sup>-1</sup>) in the temperature range of 323–723 K. As a result, the maximum value of the dimensionless figure of merit (ZT = 0.80) was achieved at 723 K for the specimen with x = 0.2.


2017 ◽  
Vol 5 (7) ◽  
pp. 3249-3259 ◽  
Author(s):  
Baoli Du ◽  
Ruizhi Zhang ◽  
Kan Chen ◽  
Amit Mahajan ◽  
Mike J. Reece

The discovery and design of compounds with intrinsically low thermal conductivity, especially compounds with a special bonding nature and stable crystal structure, is a new direction to broaden the scope of potential thermoelectric (TE) materials.


MRS Advances ◽  
2020 ◽  
Vol 5 (10) ◽  
pp. 481-487 ◽  
Author(s):  
Norifusa Satoh ◽  
Masaji Otsuka ◽  
Yasuaki Sakurai ◽  
Takeshi Asami ◽  
Yoshitsugu Goto ◽  
...  

ABSTRACTWe examined a working hypothesis of sticky thermoelectric (TE) materials, which is inversely designed to mass-produce flexible TE sheets with lamination or roll-to-roll processes without electric conductive adhesives. Herein, we prepared p-type and n-type sticky TE materials via mixing antimony and bismuth powders with low-volatilizable organic solvents to achieve a low thermal conductivity. Since the sticky TE materials are additionally injected into punched polymer sheets to contact with the upper and bottom electrodes in the fabrication process, the sticky TE modules of ca. 2.4 mm in thickness maintained temperature differences of ca. 10°C and 40°C on a hot plate of 40 °C and 120°C under a natural-air cooling condition with a fin. In the single-cell resistance analysis, we found that 75∼150-µm bismuth powder shows lower resistance than the smaller-sized one due to the fewer number of particle-particle interfaces in the electric pass between the upper and bottom electrodes. After adjusting the printed wiring pattern for the upper and bottom electrodes, we achieved 42 mV on a hot plate (120°C) with the 6 x 6 module having 212 Ω in the total resistance. In addition to the possibility of mass production at a reasonable cost, the sticky TE materials provide a low thermal conductivity for flexible TE modules to capture low-temperature waste heat under natural-air cooling conditions with fins for the purpose of energy harvesting.


2012 ◽  
Vol 249 (10) ◽  
pp. 1902-1906 ◽  
Author(s):  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Junji Tominaga

2018 ◽  
Vol 6 (39) ◽  
pp. 18928-18937 ◽  
Author(s):  
Yuchong Qiu ◽  
Ying Liu ◽  
Jinwen Ye ◽  
Jun Li ◽  
Lixian Lian

Doping Sn into the Cu2Te lattice can synergistically enhance the power factor and decrease thermal conductivity, leading to remarkably optimized zTs. The lone pair electrons from the 5s orbital of Sn can increase the DOS near the Fermi level of Cu2Te to promote PF and reduce κe by decreasing the carrier concentration. This study explores a scalable strategy to optimize the thermoelectric performance for intrinsically highly degenerate semiconductors.


Author(s):  
Tao Chen ◽  
Hongwei Ming ◽  
Xiaoying Qin ◽  
Chen Zhu ◽  
Lulu Huang ◽  
...  

As a thermoelectric material, p-type CuSbSe2 has attracted much attention due to its intrinsic low thermal conductivity and environment-friendly constituents. In this work, Sb deficient compounds CuSb1-xSe2 (x=0-0.12) are prepared...


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