Bournonite PbCuSbS3: Stereochemically Active Lone-Pair Electrons that Induce Low Thermal Conductivity

ChemPhysChem ◽  
2015 ◽  
Vol 16 (15) ◽  
pp. 3264-3270 ◽  
Author(s):  
Yongkwan Dong ◽  
Artem R. Khabibullin ◽  
Kaya Wei ◽  
James R. Salvador ◽  
George S. Nolas ◽  
...  
2020 ◽  
Vol 56 (31) ◽  
pp. 4356-4359 ◽  
Author(s):  
Mengjia Luo ◽  
Kejun Bu ◽  
Xian Zhang ◽  
Jian Huang ◽  
Ruiqi Wang ◽  
...  

An intrinsically low thermal conductivity is observed in a new p-type semiconductor SrOCuBiSe2 which combines the dual effect of Bi 6s2 lone-pair electrons and rattling vibration of Cu atoms.


2017 ◽  
Vol 5 (7) ◽  
pp. 3249-3259 ◽  
Author(s):  
Baoli Du ◽  
Ruizhi Zhang ◽  
Kan Chen ◽  
Amit Mahajan ◽  
Mike J. Reece

The discovery and design of compounds with intrinsically low thermal conductivity, especially compounds with a special bonding nature and stable crystal structure, is a new direction to broaden the scope of potential thermoelectric (TE) materials.


2018 ◽  
Vol 6 (39) ◽  
pp. 18928-18937 ◽  
Author(s):  
Yuchong Qiu ◽  
Ying Liu ◽  
Jinwen Ye ◽  
Jun Li ◽  
Lixian Lian

Doping Sn into the Cu2Te lattice can synergistically enhance the power factor and decrease thermal conductivity, leading to remarkably optimized zTs. The lone pair electrons from the 5s orbital of Sn can increase the DOS near the Fermi level of Cu2Te to promote PF and reduce κe by decreasing the carrier concentration. This study explores a scalable strategy to optimize the thermoelectric performance for intrinsically highly degenerate semiconductors.


2016 ◽  
Vol 111 ◽  
pp. 49-53 ◽  
Author(s):  
Baoli Du ◽  
Kan Chen ◽  
Haixue Yan ◽  
Michael J. Reece

2017 ◽  
Vol 96 (23) ◽  
Author(s):  
Zhenzhen Feng ◽  
Tiantian Jia ◽  
Jihua Zhang ◽  
Yuanxu Wang ◽  
Yongsheng Zhang

2018 ◽  
Vol 44 (13) ◽  
pp. 15833-15838 ◽  
Author(s):  
Kyung Min Ok ◽  
Yuji Ohishi ◽  
Yusuke Mitazono ◽  
Hiroaki Muta ◽  
Ken Kurosaki ◽  
...  

2019 ◽  
Vol 30 (08) ◽  
pp. 1950045
Author(s):  
Xiao-Peng Liu ◽  
Zhen-Zhen Feng ◽  
Shu-Ping Guo ◽  
Yi Xia ◽  
Yongsheng Zhang

Skutterudites and half-Heusler compounds are well-studied promising thermoelectric (TE) materials due to favorable electrical properties. However, their intrinsic lattice thermal conductivities are so high that various methodologies have been developed to decrease them. Based on our first-principles phonon calculations, we find that thermodynamically stable Cu3VX4 ([Formula: see text], Se, Te) compounds exhibit good thermoelectric properties due to their special crystal structure (a Cu-V-X framework plus large void tunnels). The mechanically stable framework is the favorite pathway for the carrier conduction, which induces high electrical conductivity and power factor (comparative to those of filled-skutterudites and half-Heusler systems). Moreover, the void tunnels in the crystal structure result in unsaturated coordinations at the X sites and corresponding lone-pair electrons, which lower the lattice thermal conductivity. The calculated intrinsic lattice thermal conductivity of Cu3VX4 is much lower than those of the well-studied skutterudites and half-Heusler compounds. Thus, the maximum ZT values approach 1.6 (at 900[Formula: see text]K, [Formula: see text][Formula: see text][Formula: see text]) and 1.2 (at 1000[Formula: see text]K, [Formula: see text][Formula: see text][Formula: see text]) for the p- and n-type Cu3VTe4 compounds, respectively. Our work provides not only distinctive high-performance TE materials (Cu3VX4), but also a guideline for future promising thermoelectric discoveries.


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