High-detectivity organic photodetectors based on a thick-film photoactive layer using a conjugated polymer containing a naphtho[1,2-c:5,6-c]bis[1,2,5]thiadiazole unit

2019 ◽  
Vol 7 (20) ◽  
pp. 6070-6076 ◽  
Author(s):  
Zhaomiyi Zeng ◽  
Zhiming Zhong ◽  
Wenkai Zhong ◽  
Jiaxin Zhang ◽  
Lei Ying ◽  
...  
Keyword(s):  
Thick Film ◽  
Layer Thickness ◽  
Current Density ◽  
Dark Current ◽  
Conjugated Polymer ◽  
Dark Current Density ◽  
Photoactive Layer ◽  
Organic Photodetectors

The detectivity of organic photodetectors obviously enhanced with a photoactive layer thickness as a result of the reduced dark current density.

scholarly journals Simulation of AlGaN MSM detector for investigating the effect varying absorber layer thickness

2021 ◽  
Vol 12 (1S) ◽  
pp. 445-451
Author(s):  
Harpreet Kaur, Et. al.
Keyword(s):  
Layer Thickness ◽  
Current Density ◽  
Dark Current ◽  
Spectral Response ◽  
Absorber Layer ◽  
Electron Velocity ◽  
Thickness Variation ◽  
High Signal ◽  
Active Layer Thickness ◽  
Dark Current Density

For detecting feeble Ultra-Violet (UV) signals it is essential that front-illuminated photodetector (PD) should havethick photo-absorbing layer with thin transparent metal electrodes and antireflective coating (ARC) so as to getmore photocurrent and low dark current.Since detector geometry influences its performance, so it is very important to optimize layer thickness parameters. In proposed work fixed area Al0.5Ga0.5N/AlN/ Sapphire based Metal-Semiconductor-Metal (MSM)PDbased has been analyzed for optimum value of active layer thickness and inter-electrode thickness.In addition to take benefit of large Schottky barrierGold material has beenutilized for electrodes. It has been illustrated in past research studies that with the increase in thickness of AlGaN layer, more incident energy can be absorbed for large EHPs generation which lead to increased responsivity.However, few research papers have related the effect of variations inthickness of active layerwith electron velocity which has significant effect on dark current density, recombination rateand additionally on efficiency.So for further development and widespread implementation of AlGaN/GaN based detectors there is need to study the effect of variation in photo-absorber layer thickness on closely related performance parameters so as to select its optimum value.Current Voltage (IV)-characteristics,recombination rate, current density plots and spectral response have been investigated using Atlas-Silvaco simulation tool.In addition for electrode thickness variation,transmission and absorptionplots are alsoinvestigated. For the proposed MSM structure, it has been observed that dark current density tends to increase   beyond the optimum value of thickness of AlGaN layerwith specific absorption coefficient. Good transmission of light with high spectral response can be obtained with optimum value of electrode thickness.These observations can be suitable for improving the detectivity in support of various UV detection applications requiring good sensitivity and high signal to noise ratio.

Vacuum‐Processed Small Molecule Organic Photodetectors with Low Dark Current Density and Strong Response to Near‐Infrared Wavelength

2020 ◽  
Vol 8 (17) ◽  
pp. 2000519 ◽  
Author(s):  
Chih‐Chien Lee ◽  
Richie Estrada ◽  
Ya‐Ze Li ◽  
Sajal Biring ◽  
Nurul Ridho Al Amin ◽  
...  
Keyword(s):  
Small Molecule ◽  
Current Density ◽  
Dark Current ◽  
Near Infrared ◽  
Dark Current Density ◽  
Strong Response ◽  
Infrared Wavelength ◽  
Organic Photodetectors

Short-wave infrared detector with double barrier structure and low dark current density

2016 ◽  
Vol 14 (2) ◽  
pp. 022501-22505
Author(s):  
Yu Dong Yu Dong ◽  
Guanglong Wang Guanglong Wang ◽  
Haiqiao Ni Haiqiao Ni ◽  
Kangming Pei Kangming Pei ◽  
Zhongtao Qiao Zhongtao Qiao ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
Infrared Detector ◽  
Short Wave ◽  
Barrier Structure ◽  
Dark Current Density ◽  
Double Barrier ◽  
Short Wave Infrared ◽  
Double Barrier Structure

scholarly journals Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 76
Author(s):  
U. Zavala-Moran ◽  
M. Bouschet ◽  
J. Perez ◽  
R. Alchaar ◽  
S. Bernhardt ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
Spectral Response ◽  
Minority Carrier Lifetime ◽  
Peak Position ◽  
Type Ii ◽  
Dark Current Density ◽  
Time Resolved ◽  
Midwave Infrared ◽  
Electrical Characterizations

In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime value equal to 1 µs at 80 K, carried out on dedicated structure showing photoluminescence peak position at 4.9 µm, is extracted from a time resolved photoluminescence measurement. Dark current density as low as 3.2 × 10−5 A/cm2 at 150 K is reported on the corresponding device exhibiting a 50% cut-off wavelength around 5 µm. A performance analysis through normalized spectral response and dark current density-voltage characteristics was performed to determine both the operating bias and the different dark current regimes.

scholarly journals Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 68
Author(s):  
Arash Dehzangi ◽  
Donghai Wu ◽  
Ryan McClintock ◽  
Jiakai Li ◽  
Alexander Jaud ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantum Efficiency ◽  
Current Density ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Type Ii ◽  
Dark Current Density ◽  
Applied Bias ◽  
Type Ii Superlattice ◽  
Specific Detectivity

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2/W.

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