A high performance electroformed single-crystallite VO2 threshold switch

Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 22070-22078 ◽  
Author(s):  
Xin Zhou ◽  
Deen Gu ◽  
Yatao Li ◽  
Haoxin Qin ◽  
Yadong Jiang ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Switching Speed ◽  
Fast Switching ◽  
Turn On ◽  
Threshold Switching ◽  
Threshold Switch ◽  
Switching Characteristics ◽  
Fast Switching Speed

We investigated the threshold switching characteristics of an electroformed single crystal VO2 channel, it exhibits a high Ion/Ioff ratio of 143, a steep turn-on voltage slope of <0.5 mV dec−1 and a fast switching speed of 23 ns.

scholarly journals Modeling and Experimental Investigation of Electromagnetic Interference (EMI) for SiC-Based Motor Drive

Energies ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 5173
Author(s):  
Yingzhe Wu ◽  
Shan Yin ◽  
Hui Li ◽  
Minghai Dong
Keyword(s):  
Electromagnetic Interference ◽  
Semiconductor Device ◽  
Frequency Domain Analysis ◽  
Motor Drives ◽  
Motor Drive ◽  
Switching Frequency ◽  
Switching Speed ◽  
Fast Switching ◽  
Source Voltage ◽  
Switching Characteristics

The motor drive has been widely adopted in modern power applications. With the emergency of the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET, performance of the motor drive can be improved in terms of efficiency, power density, and reliability. However, the fast switching transient and serious switching ringing of the SiC MOSFET can cause unwanted high-frequency (HF) electromagnetic interference (EMI), which may significantly reduce the reliability of the motor drive in many aspects. In order to comprehensively reveal the mechanism of the EMI previously used in motor drives using SiC MOSFET, this paper plans to analyze the influences of both HF impedance of the motor and switching characteristics of the SiC MOSFET. A simulation model for motor drives has been proposed, which contains the HF circuit model of the motor as well as a semi-behavioral analytical model of the SiC MOSFET. Since the model shows a good agreement with the experimentally measured results on spectra of drain-source voltage of the SiC MOSFET (vds), phase to ground voltage of the motor (vphase), CM voltage (vcm), phase current of the motor (idm), and CM current (icm), it can be adopted to quantitatively investigate the influence of the motor impedance on EMI through frequency-domain analysis. Additionally, the impacts of switching characteristics of SiC MOSFET on EMI are also well studied according to relative experiment results in terms of switching speed, switching frequency, and switching ringing. Based on the analysis above, the relationship between motor impedance, switching characteristics of the SiC MOSFET, and HF EMI can be figured out, which is able to provide much helpful assistance for application of the motor drive.

Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance

2016 ◽  
Vol 858 ◽  
pp. 1095-1098
Author(s):  
Masayuki Yamamoto ◽  
Yasunori Tanaka ◽  
Tsutomu Yatsuo ◽  
Koji Yano
Keyword(s):  
Switching Speed ◽  
Reverse Transfer ◽  
Switching Device ◽  
Fast Switching ◽  
Static Induction Transistor ◽  
Static Induction ◽  
High Transconductance ◽  
Fast Switching Speed

We investigate a cascode configuration of a normally-on SiC-Buried Gate Static Induction Transistor (SiC-BGSIT) and Si-MOSFET as an alternative switching device of the SiC-MOSFET. It is shown that the transconductance of our cascode device is much higher than that of commercial SiC-MOSFETs while the switching speed is much faster than that of normally-off SiC-BGSITs. The origin of the fast switching speed in this cascode configuration is discussed in terms of a simulated reverse transfer capacitance.

Broadband PXI local oscillator modules with low phase noise and fast switching speed

2011 ◽  
Author(s):  
Alexander Chenakin ◽  
Suresh Ojha ◽  
Shyam Nediyanchath ◽  
Vladimir Bykhovsky ◽  
Steven McClellan ◽  
...  
Keyword(s):  
Phase Noise ◽  
Local Oscillator ◽  
Switching Speed ◽  
Fast Switching ◽  
Low Phase Noise ◽  
Fast Switching Speed

Fast-switching-speed, low-forward-voltage-drop static induction (SI) thyristor

1996 ◽  
Vol 116 (3) ◽  
pp. 107-115 ◽  
Author(s):  
Mitsuhide Maeda ◽  
Takuji Keno ◽  
Yuji Suzuki ◽  
Toshiro Abe
Keyword(s):  
Voltage Drop ◽  
Forward Voltage ◽  
Switching Speed ◽  
Fast Switching ◽  
Forward Voltage Drop ◽  
Static Induction ◽  
Fast Switching Speed

scholarly journals Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory

AIP Advances ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 055312 ◽  
Author(s):  
Gang Cao ◽  
Xiaobing Yan ◽  
Jingjuan Wang ◽  
Zhenyu Zhou ◽  
Jianzhong Lou ◽  
...  
Keyword(s):  
Resistive Memory ◽  
Switching Speed ◽  
Fast Switching ◽  
Electronic Synapse ◽  
Fast Switching Speed
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