scholarly journals Modeling and Experimental Investigation of Electromagnetic Interference (EMI) for SiC-Based Motor Drive

Energies ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 5173
Author(s):  
Yingzhe Wu ◽  
Shan Yin ◽  
Hui Li ◽  
Minghai Dong
Keyword(s):  
Electromagnetic Interference ◽  
Semiconductor Device ◽  
Frequency Domain Analysis ◽  
Motor Drives ◽  
Motor Drive ◽  
Switching Frequency ◽  
Switching Speed ◽  
Fast Switching ◽  
Source Voltage ◽  
Switching Characteristics

The motor drive has been widely adopted in modern power applications. With the emergency of the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET, performance of the motor drive can be improved in terms of efficiency, power density, and reliability. However, the fast switching transient and serious switching ringing of the SiC MOSFET can cause unwanted high-frequency (HF) electromagnetic interference (EMI), which may significantly reduce the reliability of the motor drive in many aspects. In order to comprehensively reveal the mechanism of the EMI previously used in motor drives using SiC MOSFET, this paper plans to analyze the influences of both HF impedance of the motor and switching characteristics of the SiC MOSFET. A simulation model for motor drives has been proposed, which contains the HF circuit model of the motor as well as a semi-behavioral analytical model of the SiC MOSFET. Since the model shows a good agreement with the experimentally measured results on spectra of drain-source voltage of the SiC MOSFET (vds), phase to ground voltage of the motor (vphase), CM voltage (vcm), phase current of the motor (idm), and CM current (icm), it can be adopted to quantitatively investigate the influence of the motor impedance on EMI through frequency-domain analysis. Additionally, the impacts of switching characteristics of SiC MOSFET on EMI are also well studied according to relative experiment results in terms of switching speed, switching frequency, and switching ringing. Based on the analysis above, the relationship between motor impedance, switching characteristics of the SiC MOSFET, and HF EMI can be figured out, which is able to provide much helpful assistance for application of the motor drive.

scholarly journals Performance Analysis of Nested Multilevel Inverter Topology for 72V Electric Vehicle Applications

2020 ◽  
Vol 53 (6) ◽  
pp. 925-930
Author(s):  
Narendra Kumar Muthukuri ◽  
Rajanand Patnaik Narasipuram ◽  
Subbarao Mopidevi
Keyword(s):  
Electric Vehicle ◽  
Electromagnetic Interference ◽  
Multilevel Inverter ◽  
Motor Drive ◽  
Switching Frequency ◽  
Rpm System ◽  
Control Scheme ◽  
And Control ◽  
Phase Design ◽  
Inverter Topology

In recent years Multilevel Inverter (MLI) getting in popular due to its performance in field of medium and high-power applications. Many MLI’s like Diode-clamped, cascaded H-bridge, flying capacitor and hybrid cascaded H-bridge are introduced in 1970’s. But due to the draw backs like harmonic distortions researchers are concentrated on novel topologies. Recently nested configuration is gaining attention to researchers due to it is having an advantage of 3-phase design with a smaller number of components compared to traditional MLI topologies. Hence, this paper investigates the performance an advanced MLI named as Nested topology for 72V electric vehicle (EV) motor drive application for 1kW/1500 RPM system. It can generate near-sinusoidal voltages with only fundamental switching frequency, there is no electromagnetic interference (EMI) and also it gives easy operating EV and safer conditions. Furthermore, this paper inspects the analysis, benefits and control scheme for nested MLI for the use of EV motor drive applications. The simulations are carried out using Matlab/Simlink.

scholarly journals Multilevel Inverter: A Survey on Classical and Advanced Topologies, Control Schemes, Applications to Power System and Future Prospects

Energies ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5773
Author(s):  
Subhashree Choudhury ◽  
Mohit Bajaj ◽  
Taraprasanna Dash ◽  
Salah Kamel ◽  
Francisco Jurado
Keyword(s):  
Renewable Energy ◽  
Power System ◽  
Electromagnetic Interference ◽  
Motor Drives ◽  
Switching Frequency ◽  
Power Electronic ◽  
Renewable Energy Resources ◽  
Voltage Profile ◽  
Electric Motor Drives ◽  
Ac Transmission

In recent years, multilevel inverters (MLIs) have emerged to be the most empowered power transformation technology for numerous operations such as renewable energy resources (RERs), flexible AC transmission systems (FACTS), electric motor drives, etc. MLI has gained popularity in medium- to high-power operations because of numerous merits such as minimum harmonic contents, less dissipation of power from power electronic switches, and less electromagnetic interference (EMI) at the receiving end. The MLI possesses many essential advantages in comparison to a conventional two-level inverter, such as voltage profile enhancement, increased efficiency of the overall system, the capability of high-quality output generation with the reduced switching frequency, decreased total harmonic distortions (THD) without reducing the power of the inverter and use of very low ratings of the device. Although classical MLIs find their use in various vital key areas, newer MLI configurations have an expanding concern to the limited count of power electronic devices, gate drivers, and isolated DC sources. In this review article, an attempt has been made to focus on various aspects of MLIs such as different configurations, modulation techniques, the concept of new reduced switch count MLI topologies, applications regarding interface with renewable energy, motor drives, and FACTS controller. Further, deep insights for future prospective towards hassle-free addition of MLI technology towards more enhanced application for various fields of the power system have also been discussed. This article is believed to be extremely helpful for academics, researchers, and industrialists working in the direction of MLI technology.

Impacts of using wide bandgap transistors on electronics and motors

2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Mathieu Gerber ◽  
Guillaume Callerant ◽  
Christophe Espanet ◽  
Farid Meibody-Tabar ◽  
Noureddine Takorabet
Keyword(s):  
High Frequency ◽  
High Speed ◽  
Wide Bandgap ◽  
Switching Frequency ◽  
Switching Speed ◽  
Content Type ◽  
Parasitic Element ◽  
Fast Switching ◽  
Electronic Model ◽  
The Impact

Purpose The purpose of this paper is to study the high-frequency impacts of fast switching wide-bandgap transistors on electronic and motor designs. The high-frequency power converters, dedicated to driving high-speed motors, require specific models to design predictively electronic and motors. Design/methodology/approach From magnetic and electric models, the high-frequency parasitic elements for both electronics and motor are determined. Then, high-frequency circuit models accounting for of parasitic element extractions are built to study the wide bandgap transistors commutations and their impacts on motor windings. Findings The results of the models, for electronics and motors, are promising. The high-frequency commutation cell study is used to optimize the layouts and to improve the commutation behaviours and performances. The impact of the switching speed is highlighted on the winding voltage susceptibility. Then, the switching frequency and commutation rapidity can be both optimized to increase the performance of motor and electronics. The electronic model is validated by experimentations. Research limitations/implications The method can be only applied to the existing motor and electronic designs. It is not taken into account in an automized global high-frequency optimizer. Originality/value Helped by magnetic and electric FEA calculations where the parasitic element extractions are performed. The switching frequency and commutation rapidity can be both optimized to increase the performance of motor and electronics.

scholarly journals Coupled random PWM technique for dual inverter fed induction motor drive

2019 ◽  
Vol 10 (1) ◽  
pp. 58 ◽  
Author(s):  
Syed Munvar Ali ◽  
V. Vijaya Kumar Reddy ◽  
M. Surya Kalavathi
Keyword(s):  
Induction Motor ◽  
Electromagnetic Interference ◽  
Acoustic Noise ◽  
Paper Analysis ◽  
Motor Drives ◽  
Motor Drive ◽  
Induction Motor Drive ◽  
Induction Motor Drives ◽  
Open End Winding ◽  
Good Standard

Dual inverter fed induction motor drives provide more advantages in contrast with other multilevel inverter drives. Coupled PWM techniques provide good standard of output voltage than the decoupled PWM techniques for dual inverter configuration. In this paper analysis of open end winding induction motor by coupled random PWM signals and decoupled SVPWM signals was carried out. Induction motor by random PWM technique generate low acoustic noise and electromagnetic interference to near by systems. The performance evaluation of the drive wss implemented in MATLAB/simulink and the results were presented.

A high performance electroformed single-crystallite VO2 threshold switch

Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 22070-22078 ◽  
Author(s):  
Xin Zhou ◽  
Deen Gu ◽  
Yatao Li ◽  
Haoxin Qin ◽  
Yadong Jiang ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Switching Speed ◽  
Fast Switching ◽  
Turn On ◽  
Threshold Switching ◽  
Threshold Switch ◽  
Switching Characteristics ◽  
Fast Switching Speed

We investigated the threshold switching characteristics of an electroformed single crystal VO2 channel, it exhibits a high Ion/Ioff ratio of 143, a steep turn-on voltage slope of <0.5 mV dec−1 and a fast switching speed of 23 ns.

scholarly journals Input/Output EMI Filter Design for Three-Phase Ultra-High Speed Motor Drive GaN Inverter Stage

2021 ◽  
Vol 6 (1) ◽  
pp. 74-92
Author(s):  
Michael Antivachis ◽  
Keyword(s):  
Electromagnetic Interference ◽  
High Speed ◽  
Electromagnetic Compatibility ◽  
Filter Design ◽  
Mutual Influence ◽  
Motor Drives ◽  
Motor Drive ◽  
Input Side ◽  
Output Side ◽  
Conducted Emi

Pairing wide-bandgap (WBG) inverters with high-speed motors results in compact and effi cient motor drives, but requires special attention on electromagnetic interference (EMI) aspects. This paper focuses on electromagnetic compatibility (EMC) of high-speed motor drives, supplied by a DC source. In order to protect the nearby equipment from the EMI noise of the WBG inverter, a fi lter that complies with conducted EMI regulations is placed at the inverter DC input-side. However, there is no clear mandate requiring from inverters to comply with conducted EMI regulations at the AC output-side, where only the motor is placed. For this reason, there is no full consensus whether it is necessary to use an output fi lter, and if so, what type of output fi lter would be suitable, i.e., if differential-mode (DM), common-mode (CM) or both DM/CM output fi lter would fi t best. A full sine-wave output fi lter (FSF) is proposed in this paper, that features both DM and CM attenuation, and capacitors connected to the DC link. Besides the several well established benefi ts of a FSF, such as purely sinusoidal motor currents and the protection of the motor against high du/dt originating from the fast switching of the semiconductor devices, a FSF at the inverter output-side, also reduces the CM EMI emissions at the inverter input-side. Namely, since the inverter housing, the motor housing and the interconnecting shielded cable are all grounded, CM emissions generated at the inverter output-side are directly mapped to the inverter input-side, i.e., there is an input-to-output CM noise interrelation. A FSF reduces the output-side CM EMI emissions and thus mitigates the input-to-output CM noise mutual influence. Two types of FSF (c-FSF and d-FSF) are comparatively evaluated, in terms of volume, losses and EMI performance. The theoretical consideration are tested within the context of a high-speed 280 krpm, 1 kW motor drive, with 80 V DC supply. The experimental results validate the good performance of the proposed filter concept.

High-Density Memristor-CMOS Ternary Logic Family

2020 ◽  
Author(s):  
Xiaoyuan Wang ◽  
Pengfei Zhou ◽  
Jason Eshraghian ◽  
Chih-Yang Lin ◽  
Herbert Ho-Ching Iu ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Practical Implementation ◽  
Switching Speed ◽  
High Data ◽  
Fast Switching ◽  
Data Density ◽  
Order Of Magnitude ◽  
High Transconductance ◽  
Logic Functions ◽  
Magnitude Improvement

<div>This paper presents the first experimental demonstration</div><div>of a ternary memristor-CMOS logic family. We systematically</div><div>design, simulate and experimentally verify the primitive</div><div>logic functions: the ternary AND, OR and NOT gates. These are then used to build combinational ternary NAND, NOR, XOR and XNOR gates, as well as data handling ternary MAX and MIN gates. Our simulations are performed using a 50-nm process which are verified with in-house fabricated indium-tin-oxide memristors, optimized for fast switching, high transconductance, and low current leakage. We obtain close to an order of magnitude improvement in data density over conventional CMOS logic, and a reduction of switching speed by a factor of 13 over prior state-of-the-art ternary memristor results. We anticipate extensions of this work can realize practical implementation where high data density is of critical importance.</div>

scholarly journals 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3554
Author(s):  
Jaeyeop Na ◽  
Jinhee Cheon ◽  
Kwangsoo Kim
Keyword(s):  
Dynamic Characteristics ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Switching Loss ◽  
Switching Speed ◽  
Polysilicon Gate ◽  
Effect Transistor ◽  
Switching Characteristics

In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N+ polysilicon split gate to the P+ polysilicon split gate. It has two separate P+ shielding regions under the gate to use the P+ split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.

scholarly journals Opposite Triangle Carrier with SVPWM for Common-Mode Voltage Reduction in Dual Three Phase Motor Drives

Energies ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 282
Author(s):  
Seon-Ik Hwang ◽  
Jang-Mok Kim
Keyword(s):  
Electromagnetic Interference ◽  
Pulse Width Modulation ◽  
Motor Drives ◽  
Common Mode ◽  
Pwm Inverter ◽  
Common Mode Voltage ◽  
Voltage Vector ◽  
Three Phase ◽  
The Common ◽  
Zero Voltage

The common-mode voltage (CMV) generated by the switching operation of the pulse width modulation (PWM) inverter leads to bearing failure and electromagnetic interference (EMI) noises. To reduce the CMV, it is necessary to reduce the magnitude of dv/dt and change the frequency of the CMV. In this paper, the range of the CMV is reduced by using opposite triangle carrier for ABC and XYZ winding group, and the change in frequency in the CMV is reduced by equalizing the dwell time of the zero voltage vector on ABC and XYZ winding group of dual three phase motor.

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