Effects of out-of-plane strains and electric fields on the electronic structures of graphene/MTe (M = Al, B) heterostructures

Nanoscale ◽  
2019 ◽  
Vol 11 (29) ◽  
pp. 13800-13806 ◽  
Author(s):  
Dingbo Zhang ◽  
Yue Hu ◽  
Hongxia Zhong ◽  
Shengjun Yuan ◽  
Chang Liu
Keyword(s):  
Electric Fields ◽  
Electronic Structures ◽  
Contact Formation ◽  
Out Of Plane

Applied electric fields can modulate effectively the contact formation and doping of graphene in graphene/MTe heterostructures.

scholarly journals Effects of interlayer coupling and electric fields on the electronic structures of graphene and MoS2heterobilayers

2016 ◽  
Vol 4 (9) ◽  
pp. 1776-1781 ◽  
Author(s):  
Wei Hu ◽  
Tian Wang ◽  
Ruiqi Zhang ◽  
Jinlong Yang
Keyword(s):  
Electric Fields ◽  
Electronic Structures ◽  
Interlayer Coupling ◽  
Schottky Barriers ◽  
Contact Formation

The effects of interlayer coupling and electric fields can be used to effectively control the Schottky barriers and contact formation at the interface of graphene and MoS2heterobilayers.

scholarly journals Large-area printing of ferroelectric surface and super-domains for efficient solar water splitting

2020 ◽  
Author(s):  
Yu Tian ◽  
Yaqing Wei ◽  
Minghui Pei ◽  
Rongrong Cao ◽  
Zhenao Gu ◽  
...  
Keyword(s):  
Water Splitting ◽  
Electric Fields ◽  
Electronic Structures ◽  
Active Sites ◽  
Large Area ◽  
Solar Water Splitting ◽  
High Efficient ◽  
Catalytic Sites ◽  
Order Of Magnitude ◽  
Magnitude Increase

Abstract Surface electronic structures of the photoelectrodes determine the activity and efficiency of the photoelectrochemical water splitting, but the controls of their surface structures and interfacial chemical reactions remain challenging. Here, we use ferroelectric BiFeO3 as a model system to demonstrate an efficient and controllable water splitting reaction by large-area constructing the hydroxyls-bonded surface. The up-shift of band edge positions at this surface enables and enhances the interfacial holes and electrons transfer through the hydroxyl-active-sites, leading to simultaneously enhanced oxygen and hydrogen evolutions. Furthermore, printing of ferroelectric super-domains with microscale checkboard up/down electric fields separates the distribution of reduction/oxidation catalytic sites, enhancing the charge separation and giving rise to an order of magnitude increase of the photocurrent. This large-area printable ferroelectric surface and super-domains offer an alternative platform for controllable and high-efficient photocatalysis.

Electrical Extraction of The in-Plane Dielectric Constant of Fluorinated Polyimide

1997 ◽  
Vol 476 ◽  
Author(s):  
Alvin L.S. Loke ◽  
Jeffrey T. Wetzel ◽  
John J. Stankus ◽  
S. Simon Wong
Keyword(s):  
Dielectric Constant ◽  
Electric Fields ◽  
Signal Propagation ◽  
Propagation Delay ◽  
Dielectric Constants ◽  
Effective Dielectric Constant ◽  
Fluorinated Polyimide ◽  
Lower Dielectric Constant ◽  
Out Of Plane ◽  
Fringing Fields

AbstractFluorinated polyimide can potentially replace TEOS as an interlevel dielectric in future ULSI interconnect technologies because its lower dielectric constant offers reduced crosstalk, signal propagation delay, and dynamic power dissipation. One issue associated with polyimides is the anisotropy in dielectric constant, where the smaller out-of-plane dielectric constant, typically measured using parallel-plate capacitors, can misleadingly exaggerate the advantage in reducing crosstalk. In this paper, we present a novel electrical technique to estimate the in-plane dielectric constant of DuPont FPI-136M fluorinated polyimide without requiring dielectric gapfill.A blanket FPI-136M film is deposited over interdigitated inlaid Al(0.5%Cu) structures and the crosstalk capacitance is measured. Identical inlaid structures with air and TEOS passivations are also measured for capacitance calibration. Differences in measured capacitances reflect electric fields fringing in the various passivation dielectrics above the inlaid metal. With the known dielectric constants of air and TEOS, the effective dielectric constant of FPI-136M is interpolated to be 2.8. Interconnect simulations confirm that the effective dielectric constant extraction technique is valid and accurate provided that the passivation layer is sufficiently thick to contain the fringing fields.To estimate the in-plane dielectric constant, we use simulations to determine the combination of in-plane and out-of-plane dielectric constants that is equivalent to the extracted effective dielectric constant. With an out-of-plane dielectric constant of 2.6, the in-plane dielectric constant of FPI-136M is estimated to be 3.0. This technique is applicable to other dieletrics.

scholarly journals Detecting halfmetallic electronic structures of spintronic materials in a magnetic field

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
H. Fujiwara ◽  
R. Y. Umetsu ◽  
F. Kuroda ◽  
J. Miyawaki ◽  
T. Kashiuchi ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Band Gap ◽  
Electric Fields ◽  
Electronic Structures ◽  
Magnetic Circular Dichroism ◽  
Spectroscopic Technique ◽  
Band Gap Engineering ◽  
Promising Tool ◽  
Magnetic Layers ◽  
Spin Polarized

AbstractBand-gap engineering is one of the fundamental techniques in semiconductor technology and also applicable in next generation spintronics using the spin degree of freedom. To fully utilize the spintronic materials, it is essential to optimize the spin-dependent electronic structures in the operando conditions by applying magnetic and/or electric fields. Here we present an advanced spectroscopic technique to probe the spin-polarized electronic structures by using magnetic circular dichroism (MCD) in resonant inelastic soft X-ray scattering (RIXS) under an external magnetic field. Thanks to the spin-selective dipole-allowed transitions in RIXS-MCD, we have successfully demonstrated the direct evidence of the perfectly spin-polarized electronic structures for the prototypical halfmetallic Heusller alloy $$\hbox {Co}_2\hbox {MnSi}$$ Co 2 MnSi . RIXS-MCD is a promising tool to probe the spin-dependent carriers and band-gap induced in the buried magnetic layers in an element specific way under the operando conditions.

Electronic structures of capped carbon nanotubes under electric fields

2002 ◽  
Vol 65 (16) ◽  
Author(s):  
Changwook Kim ◽  
Bongsoo Kim ◽  
Seung Mi Lee ◽  
Chulsu Jo ◽  
Young Hee Lee
Keyword(s):  
Carbon Nanotubes ◽  
Electric Fields ◽  
Electronic Structures

Tuning electronic structures of Sc2CO2/MoS2 polar–nonpolar van der Waals heterojunctions: interplay of internal and external electric fields

2017 ◽  
Vol 5 (32) ◽  
pp. 8128-8134 ◽  
Author(s):  
Longhua Li ◽  
Weidong Shi
Keyword(s):  
Electronic Properties ◽  
Electric Fields ◽  
Electronic Structures ◽  
Van Der Waals ◽  
External Electric Fields

The interplay of internal and external electric fields provides an effective way to modulate the electronic properties of van der Waals heterojunctions.

Study of the Non-Linearity on TiO2(0 0 1) Surface with Oxygen Defects: A First-Principles Study

NANO ◽  
2017 ◽  
Vol 12 (08) ◽  
pp. 1750097
Author(s):  
Yuehua Dai ◽  
Xu Zhang ◽  
Chengzhi Ma ◽  
Zhiyong Pan ◽  
Feifei Wang ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
First Principles ◽  
Electronic Structures ◽  
Oxygen Vacancies ◽  
Stark Effect ◽  
Energy Levels ◽  
Oxygen Interstitial ◽  
Oxygen Defects ◽  
Pseudopotential Calculations

First-principles plane-wave pseudopotential calculations were performed to study the energetics and electronic structures of oxygen defects on rutile TiO2(0 0 1). The influence of the material thickness on non-linearity (NL) was studied. With the increase in the thickness, the NL became stronger. Calculating the site-projected density of states by applying an external electric field showed that the NL of the bulk is due to the exchange of electrons between O 2p orbitals and Ti 3d orbitals. Finally, the influence of oxygen defects — oxygen vacancies (Vo), oxygen interstitials (Oi), and oxygen vacancies/oxygen interstitial (Vo[Formula: see text]Oi) pairs (Frenkel pair defects) — on the NL of TiO2 was studied. These results demonstrate that the band gap ([Formula: see text] of TiO2 became gradually narrower as the electric field increased. The Stark effect and defects can lead to the splitting of degenerate energy levels. Stronger electric fields increase the band splitting and reduce [Formula: see text]. With the increase in the Vo concentration, the decrease in the splitting amplitude and width of the energy level lead to weakening of the transfer of electrons between O and Ti atoms and optimizing the NL of TiO2. Therefore, the incorporation of Vo plays a significant role in improving the NL of TiO2.

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