scholarly journals Effects of interlayer coupling and electric fields on the electronic structures of graphene and MoS2heterobilayers

2016 ◽  
Vol 4 (9) ◽  
pp. 1776-1781 ◽  
Author(s):  
Wei Hu ◽  
Tian Wang ◽  
Ruiqi Zhang ◽  
Jinlong Yang
Keyword(s):  
Electric Fields ◽  
Electronic Structures ◽  
Interlayer Coupling ◽  
Schottky Barriers ◽  
Contact Formation

The effects of interlayer coupling and electric fields can be used to effectively control the Schottky barriers and contact formation at the interface of graphene and MoS2heterobilayers.

Effects of out-of-plane strains and electric fields on the electronic structures of graphene/MTe (M = Al, B) heterostructures

Nanoscale ◽  
2019 ◽  
Vol 11 (29) ◽  
pp. 13800-13806 ◽  
Author(s):  
Dingbo Zhang ◽  
Yue Hu ◽  
Hongxia Zhong ◽  
Shengjun Yuan ◽  
Chang Liu
Keyword(s):  
Electric Fields ◽  
Electronic Structures ◽  
Contact Formation ◽  
Out Of Plane

Applied electric fields can modulate effectively the contact formation and doping of graphene in graphene/MTe heterostructures.

scholarly journals Large-area printing of ferroelectric surface and super-domains for efficient solar water splitting

2020 ◽  
Author(s):  
Yu Tian ◽  
Yaqing Wei ◽  
Minghui Pei ◽  
Rongrong Cao ◽  
Zhenao Gu ◽  
...  
Keyword(s):  
Water Splitting ◽  
Electric Fields ◽  
Electronic Structures ◽  
Active Sites ◽  
Large Area ◽  
Solar Water Splitting ◽  
High Efficient ◽  
Catalytic Sites ◽  
Order Of Magnitude ◽  
Magnitude Increase

Abstract Surface electronic structures of the photoelectrodes determine the activity and efficiency of the photoelectrochemical water splitting, but the controls of their surface structures and interfacial chemical reactions remain challenging. Here, we use ferroelectric BiFeO3 as a model system to demonstrate an efficient and controllable water splitting reaction by large-area constructing the hydroxyls-bonded surface. The up-shift of band edge positions at this surface enables and enhances the interfacial holes and electrons transfer through the hydroxyl-active-sites, leading to simultaneously enhanced oxygen and hydrogen evolutions. Furthermore, printing of ferroelectric super-domains with microscale checkboard up/down electric fields separates the distribution of reduction/oxidation catalytic sites, enhancing the charge separation and giving rise to an order of magnitude increase of the photocurrent. This large-area printable ferroelectric surface and super-domains offer an alternative platform for controllable and high-efficient photocatalysis.

Interlayer coupling and electric field controllable Schottky barriers and contact types in graphene/ PbI2 heterostructures

2020 ◽  
Vol 101 (23) ◽  
Author(s):  
Chuong V. Nguyen ◽  
M. Idrees ◽  
Huynh V. Phuc ◽  
Nguyen N. Hieu ◽  
Nguyen T. T. Binh ◽  
...  
Keyword(s):  
Electric Field ◽  
Interlayer Coupling ◽  
Schottky Barriers

PHOTOEMISSION STUDY OF THE INTRA-UNIT-CELL COUPLING IN A TRILAYER CUPRATE

2002 ◽  
Vol 16 (11n12) ◽  
pp. 1691-1696 ◽  
Author(s):  
D. L. FENG ◽  
H. EISAKI ◽  
K. M. SHEN ◽  
A. DAMASCELLI ◽  
C. KIM ◽  
...  
Keyword(s):  
Electronic Structures ◽  
Cuprate Superconductors ◽  
Single Layer ◽  
Interlayer Coupling ◽  
Unit Cell ◽  
Photoemission Spectroscopy ◽  
Cell Coupling ◽  
Lineshape Analysis ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Photoemission Study

The electronic structures of the nearly optimally doped single-layer, bilayer and trilayer Bi-based cuprates are investigated by angle-resolved photoemission spectroscopy. A lineshape analysis of data taken for different photon energies indicates that the interlayer coupling within the trilayer is not stronger than its counterpart in the bilayer system. This suggests that the higher T c of the trilayer cuprate superconductors is not due to an enhancement of the coupling strength between the neighboring CuO2 planes within each unit cell.

Thin Ferroelectric Film between Double Schottky Barriers

2004 ◽  
Vol 830 ◽  
Author(s):  
Lyuba A. Delimova ◽  
Igor V. Grekhov ◽  
Dmitri V. Mashovets ◽  
Sangmin Shin ◽  
June-Mo Koo ◽  
...  
Keyword(s):  
Film Thickness ◽  
Poisson Equation ◽  
Electric Fields ◽  
Field Potential ◽  
Ferroelectric Film ◽  
Schottky Barriers ◽  
Flat Band ◽  
External Bias ◽  
The Poisson Equation ◽  
Type Semiconductor

ABSTRACTThin-film uniform metal-ferroelectric-metal (M/F/M) structure between back-to-back Schottky barriers (SBs) is considered. The ferroelectric is assumed to be a p-type semiconductor, and the film thickness is far less than the depletion layer induced by the S.B. Numerical integration of the Poisson equation is used to analyze the influence of double Shottky barriers on the distributions of the electric field, potential, and polarization across the film thickness as functions of external bias and the film electrical history. The range of structure parameters is determined, where the Poisson equation for M/F/M structure can be solved analytically providing an obvious and easy-to-interpret representation of the M/F/M behavior. Electric fields induced by back-to-back SBs under zero external bias compensate each other to a great extent. As a result, the potential across the ferroelectric film remains virtually unchanged providing the flat-band condition in the energy diagram of zero-biased M/F/M structure; in fact, the external bias applied to M/F/M structure exerts influence only on the reverse-biased barrier.

scholarly journals Detecting halfmetallic electronic structures of spintronic materials in a magnetic field

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
H. Fujiwara ◽  
R. Y. Umetsu ◽  
F. Kuroda ◽  
J. Miyawaki ◽  
T. Kashiuchi ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Band Gap ◽  
Electric Fields ◽  
Electronic Structures ◽  
Magnetic Circular Dichroism ◽  
Spectroscopic Technique ◽  
Band Gap Engineering ◽  
Promising Tool ◽  
Magnetic Layers ◽  
Spin Polarized

AbstractBand-gap engineering is one of the fundamental techniques in semiconductor technology and also applicable in next generation spintronics using the spin degree of freedom. To fully utilize the spintronic materials, it is essential to optimize the spin-dependent electronic structures in the operando conditions by applying magnetic and/or electric fields. Here we present an advanced spectroscopic technique to probe the spin-polarized electronic structures by using magnetic circular dichroism (MCD) in resonant inelastic soft X-ray scattering (RIXS) under an external magnetic field. Thanks to the spin-selective dipole-allowed transitions in RIXS-MCD, we have successfully demonstrated the direct evidence of the perfectly spin-polarized electronic structures for the prototypical halfmetallic Heusller alloy $$\hbox {Co}_2\hbox {MnSi}$$ Co 2 MnSi . RIXS-MCD is a promising tool to probe the spin-dependent carriers and band-gap induced in the buried magnetic layers in an element specific way under the operando conditions.

The modulation of Schottky contacts of p-type graphene-GeC/GeS heterointerface

2018 ◽  
Vol 84 (3) ◽  
pp. 30101 ◽  
Author(s):  
Honglin Li ◽  
Yuting Cui ◽  
Haijun Luo
Keyword(s):  
Electric Fields ◽  
2D Materials ◽  
Schottky Contacts ◽  
Schottky Barriers ◽  
External Electric Fields ◽  
Type Contact ◽  
Interfacial States ◽  
Metal Interfaces ◽  
P Type ◽  
Vdw Interaction

n-Type contact of Schottky barriers at two-dimensional (2D) materials/metal interfaces is a usual formalization in the modern FETs applications. It is common to modulate it from n- to p-type through some specific methods. In this work, we came up with two new intrinsic p-type contacts of graphene-GeC/GeS and further tune them from p-type to n-type by external electric fields. It proved that the electronic properties of graphene and GeC/GeS can be roughly preserved for the weak van der Waals (vdW) interaction. p-Type contacts with relatively small barriers are formed at g-GeC/GeS heterointerfaces. After external electric field applied, the Schottky barrier can be effectively tuned by different external electric and the p-type contact further turns into n-type. Variation of the Schottky barriers indicated a partial pinning for interfaces of g-GeC/GeS. This is because the interfacial states between graphene and GeC/GeS hardly exists. The barrier height of g-GeC/GeS and the corresponding contact type can be flexibly tuned, which is of great importance in the design of novel transistors-based 2D materials. Searching for novel nanoscale electronic equipment based on 2D materials is a hot topic in the current study. This work would provide meaningful guidelines for nanoscale devices.

Electronic structures of capped carbon nanotubes under electric fields

2002 ◽  
Vol 65 (16) ◽  
Author(s):  
Changwook Kim ◽  
Bongsoo Kim ◽  
Seung Mi Lee ◽  
Chulsu Jo ◽  
Young Hee Lee
Keyword(s):  
Carbon Nanotubes ◽  
Electric Fields ◽  
Electronic Structures

Tuning electronic structures of Sc2CO2/MoS2 polar–nonpolar van der Waals heterojunctions: interplay of internal and external electric fields

2017 ◽  
Vol 5 (32) ◽  
pp. 8128-8134 ◽  
Author(s):  
Longhua Li ◽  
Weidong Shi
Keyword(s):  
Electronic Properties ◽  
Electric Fields ◽  
Electronic Structures ◽  
Van Der Waals ◽  
External Electric Fields

The interplay of internal and external electric fields provides an effective way to modulate the electronic properties of van der Waals heterojunctions.

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