Low-energy electron irradiation induced synthesis of molecular nanosheets: influence of the electron beam energy

2021 ◽  
Author(s):  
Christof Neumann ◽  
Richard A. Wilhelm ◽  
Maria Küllmer ◽  
Andrey Turchanin
Keyword(s):  
Electron Beam ◽  
Electron Irradiation ◽  
Beam Energy ◽  
Low Energy ◽  
Energy Electron ◽  
Electron Beam Energy ◽  
Low Energy Electron ◽  
Self Assembled

Electron irradiation induced synthesis of molecular nanosheets from aromatic self-assembled reveals different mechanisms depending on the applied beam energy.

Comment on low-energy electron-beam energy deposition

1975 ◽  
Vol 22 (4) ◽  
pp. 201-202 ◽  
Author(s):  
W.L. Chadsey ◽  
K.F. Galloway ◽  
R.L. Pease
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Energy Deposition ◽  
Low Energy ◽  
Energy Electron ◽  
Electron Beam Energy ◽  
Low Energy Electron

scholarly journals Effect of low-energy electron irradiation on voltage-capacity curves of Al/SiO2/Si structure

2019 ◽  
Vol 5 (4) ◽  
pp. 175-179
Author(s):  
Yuriy O. Kulanchikov ◽  
Pavel S. Vergeles ◽  
Eugene B. Yakimov
Keyword(s):  
Electron Beam ◽  
Electron Irradiation ◽  
Electron Beam Irradiation ◽  
Test Structure ◽  
Low Energy ◽  
Energy Electron ◽  
Negative Bias ◽  
Beam Irradiation ◽  
Dielectric Thickness ◽  
Low Energy Electron

Charging of dielectric targets by electron irradiation is a well-known phenomenon which should be taken into account in characterization of dielectric materials and coatings with electron microscopy, in electron beam lithography, in development of dielectric coatings for spacecrafts and other fields of science and engineering. Charging kinetics is strongly affected by spatial distribution of electrons and holes formed by irradiation. At the experimental electron beam energy electron penetration depth is smaller than dielectric thickness and this allows identifying the contribution of excess carrier transport to trap formation at the SiO2/Si interface. Low-energy electron beams have been shown to substantially affect C–V curve slope, i.e., to form traps at the interface. We have studied the effect of bias applied to the test structure before and after electron beam irradiation. The experiment has shown that bias of either polarity applied to the test MOS structure before low-energy electron beam irradiation practically does not affect the C–V curves of the test structure. Positive bias applied to the metallization layer during low-energy electron beam irradiation has a strong effect on the C–V curve pattern while negative bias affects the C–V curves but slightly. Study of the stability of the changes caused by electron beam irradiation has shown that the C–V curves of the test structure restore slowly even at room temperature. Application of negative bias decelerated charge relaxation.

A permanent magnet electron beam spread system used for a low energy electron irradiation accelerator

2014 ◽  
Vol 38 (10) ◽  
pp. 107008
Author(s):  
Jiang Huang ◽  
Yong-Qian Xiong ◽  
De-Zhi Chen ◽  
Kai-Feng Liu ◽  
Jun Yang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Permanent Magnet ◽  
Electron Irradiation ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron

Pattern Formation through Selective Chemical Transformation of Imine Group of Self-Assembled Monolayer by Low-Energy Electron Beam

Langmuir ◽  
2003 ◽  
Vol 19 (10) ◽  
pp. 4512-4518 ◽  
Author(s):  
Yu Jin Jung ◽  
Young-Hye La ◽  
Hyun Ju Kim ◽  
Tai-Hee Kang ◽  
Kyuwook Ihm ◽  
...  
Keyword(s):  
Electron Beam ◽  
Pattern Formation ◽  
Chemical Transformation ◽  
Low Energy ◽  
Energy Electron ◽  
Self Assembled Monolayer ◽  
Imine Group ◽  
Low Energy Electron ◽  
Selective Chemical ◽  
Self Assembled

scholarly journals Response under low-energy electron irradiation of a thin film of a potential copper precursor for focused electron beam induced deposition (FEBID)

2018 ◽  
Vol 9 ◽  
pp. 57-65 ◽  
Author(s):  
Leo Sala ◽  
Iwona B Szymańska ◽  
Céline Dablemont ◽  
Anne Lafosse ◽  
Lionel Amiaud
Keyword(s):  
Electron Beam ◽  
Cross Section ◽  
Electron Irradiation ◽  
High Vacuum ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron ◽  
Amine Ligands ◽  
Electron Beam Induced Deposition ◽  
The Cross

Background: Focused electron beam induced deposition (FEBID) allows for the deposition of free standing material within nanometre sizes. The improvement of the technique needs a combination of new precursors and optimized irradiation strategies to achieve a controlled fragmentation of the precursor for leaving deposited material of desired composition. Here a new class of copper precursors is studied following an approach that probes some surface processes involved in the fragmentation of precursors. We use complexes of copper(II) with amines and perfluorinated carboxylate ligands that are solid and stable under ambient conditions. They are directly deposited on the surface for studying the fragmentation with surface science tools. Results: Infrared spectroscopy and high-resolution electron energy loss spectroscopy (HREELS) are combined to show that the precursor is able to spontaneously lose amine ligands under vacuum. This loss can be enhanced by mild heating. The combination of mass spectrometry and low-energy electron irradiation (0–15 eV) shows that full amine ligands can be released upon irradiation, and that fragmentation of the perfluorinated ligands is induced by electrons of energy as low as 1.5 eV. Finally, the cross section for this process is estimated from the temporal evolution in the experiments on electron-stimulated desorption (ESD). Conclusion: The release of full ligands under high vacuum and by electron irradiation, and the cross section measured here for ligands fragmentation allow one to envisage the use of the two precursors for FEBID studies.

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