Nonvolatile ferroelectric field effect transistor based on a vanadium dioxide nanowire with large on- and off-field resistance switching

2020 ◽  
Vol 22 (8) ◽  
pp. 4685-4691
Author(s):  
Yanqing Zhang ◽  
Weiming Xiong ◽  
Weijin Chen ◽  
Xin Luo ◽  
Xiaoyue Zhang ◽  
...  

We fabricate a ferroelectric field effect transistor (FeFET) based on a semiconducting vanadium dioxide (VO2) nanowire (NW), and we investigate its electron transport characteristics modulated by the ferroelectric effects.

ACS Nano ◽  
2021 ◽  
Author(s):  
Gaia Ciampalini ◽  
Filippo Fabbri ◽  
Guido Menichetti ◽  
Luca Buoni ◽  
Simona Pace ◽  
...  

2007 ◽  
Vol 41 (2) ◽  
pp. 232-234 ◽  
Author(s):  
V. I. Gavrilenko ◽  
E. V. Demidov ◽  
K. V. Marem’yanin ◽  
S. V. Morozov ◽  
W. Knap ◽  
...  

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