Nonvolatile ferroelectric field effect transistor based on a vanadium dioxide nanowire with large on- and off-field resistance switching
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We fabricate a ferroelectric field effect transistor (FeFET) based on a semiconducting vanadium dioxide (VO2) nanowire (NW), and we investigate its electron transport characteristics modulated by the ferroelectric effects.
1992 ◽
Vol 10
(6)
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pp. 2873
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2003 ◽
Vol 21
(2)
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pp. 710
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2017 ◽
Vol 4
(4)
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pp. 119-125
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2011 ◽
Vol 115
(47)
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pp. 23558-23563
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