Si/Si1−xGex heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation

1997 ◽  
Vol 82 (8) ◽  
pp. 3911-3916 ◽  
Author(s):  
Philippe Dollfus
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

COMPUTER SIMULATION OF ZnO FIELD-EFFECT TRANSISTOR FOR HIGH-POWER AND HIGH-TEMPERATURE APPLICATIONS USING THE MONTE CARLO METHOD

2009 ◽  
Vol 23 (08) ◽  
pp. 1101-1109 ◽  
Author(s):  
H. ARABSHAHI
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Current Gain ◽  
Hot Electron ◽  
The Monte Carlo Method ◽  
Effect Transistor ◽  
5 Ghz ◽  
Hot Electron Transport

The steady-state and transient electron transport in ZnO field effect transistor have been studied using an ensemble Monte Carlo simulation which takes into account the hot-electron transport phenomena. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible, and the predicted I–V and transfer charateristics for the intrinsic devices show fair agreement with the available experimental data. Simulations of the effect of modulating the gate bias have also been carried out to test the device response and derived the frequency bandwidth. The value of 80 ± 5 GHz has been derived for the intrinsic current gain cut-off frequency of the ZnO MESFETs.

Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

2012 ◽  
Vol 21 (11) ◽  
pp. 117308 ◽  
Author(s):  
Jun-Cheng Wang ◽  
Gang Du ◽  
Kang-Liang Wei ◽  
Xing Zhang ◽  
Xiao-Yan Liu
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Three Dimensional ◽  
Effect Transistor
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