External Electric Field Manipulations on Structural Phase Transition of Vanadium Dioxide Nanoparticles and Its Application in Field Effect Transistor

2011 ◽  
Vol 115 (47) ◽  
pp. 23558-23563 ◽  
Author(s):  
W. W. Li ◽  
J. J. Zhu ◽  
J. R. Liang ◽  
Z. G. Hu ◽  
J. Liu ◽  
...  
Keyword(s):  
Phase Transition ◽  
Electric Field ◽  
External Electric Field ◽  
Structural Phase Transition ◽  
Vanadium Dioxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Structural Phase ◽  
Effect Transistor

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

Use of an External Electric Field to Convert the Paraelectric Phase to the Ferroelectric Phase in Ultra-thin Copolymer Films of P(VDF-TrFE)

2000 ◽  
Vol 655 ◽  
Author(s):  
Matt Poulsen ◽  
S. Adenwalla ◽  
Stephen Ducharme ◽  
V.M. Fridkin ◽  
S.P. Palto ◽  
...  
Keyword(s):  
Phase Transition ◽  
Electric Field ◽  
External Electric Field ◽  
Ferroelectric Phase ◽  
Paraelectric Phase ◽  
Continuous Process ◽  
Structural Phase ◽  
X Ray Diffraction ◽  
Layer Spacing ◽  
X Ray

AbstractX-ray diffraction was used to probe the structural changes associated with the conversion of the paraelectric phase to the ferroelectric phase that results from the application of a large external electric field. The samples under study are ultrathin (150 to 250 Å) Langmuir-Blodgett films of the copolymer vinylidene fluoride (70%) with trifluoroethylene (30%) deposited on aluminum-coated silicon. Theta-2theta X-ray diffraction was used to measure the change in inter-layer spacing perpendicular to the film surface. Upon heating at zero external electric field, the crystalline films undergo a structural phase transition, at 100± 5°C, from the all-trans ferroelectric phase to the trans-gauche paraelectric phase. [1,2] Above the phase transition temperature, the non-polar paraelectric phase can be converted back to the polar ferroelectric phase, in a smooth continuous process, using a large external electric field (∼1 GV/m). For example, at 100° C the ferroelectric phase first appears above 0.2 GV/m and increases steadily in proportion while the paraelectric phase decreases until complete conversion to the ferroelectric phase is achieved at approximately 0.6 GV/m.

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