scholarly journals Oxygen vacancy mediated cubic phase stabilization at room temperature in pure nano-crystalline zirconia films: a combined experimental and first-principles based investigation

2019 ◽  
Vol 21 (40) ◽  
pp. 22482-22490 ◽  
Author(s):  
Parswajit Kalita ◽  
Shikha Saini ◽  
Parasmani Rajput ◽  
S. N. Jha ◽  
D. Bhattacharyya ◽  
...  
Keyword(s):  
Electron Beam ◽  
Oxygen Vacancy ◽  
First Principles ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Cubic Phase ◽  
Ambient Conditions ◽  
Phase Stabilization ◽  
Nano Crystalline ◽  
Zirconia Films

Oxygen vacancy mediated cubic phase stabilization at ambient conditions in pure nano-crystalline zirconia films synthesized by electron beam evaporation.

scholarly journals CHARACTERISTICS OF LITHIUM LANTHANUM TITANATE THIN FILMS MADE BY ELECTRON BEAM EVAPORATION FROM NANOSTRUCTURED La0.67-xLi 3xTiO3 TARGET

2017 ◽  
Vol 25 (2) ◽  
pp. 243-250
Author(s):  
Nguyen Nang Dinh ◽  
Le Dinh Trong ◽  
Pham Duy Long
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ionic Conductivity ◽  
Room Temperature ◽  
Xrd Analysis ◽  
Electron Beam Evaporation ◽  
Electrochromic Devices ◽  
Lanthanum Titanate ◽  
Average Size ◽  
Beam Deposition

Bulk nanostructured perovskites of La0.67-xLi3xTiO3 (LLTO) were prepared by using thermally ball-grinding from compounds of La2O3, Li2CO3 and TiO2. From XRD analysis, it was found that LTTO materials were crystallized with nano-size grains of an average size of 30 nm. The bulk ionic conductivity was found strongly dependent on the Li+ composition, the samples with x = 0.11 (corresponding to a La0.56Li0.33TiO3 compound) have the best ionic conductivity, which is ca. 3.2 x 10-3 S/cm at room temperature. The LLTO amorphous films were made by electron beam deposition. At room temperature the smooth films have ionic conductivity of 3.5 x 10-5  S/cm and transmittance of 80%. The optical bandgap of the films was found to be of 2.3 eV. The results have shown that the perovskite La0.56Li0.33TiO3  thin films can be used for a transparent solid electrolyte in ionic battery and in all-solid-state electrochromic devices, in particular.    

Low-Temperature Indium Bonding for MEMS Devices

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 002543-002566
Author(s):  
Daniel Harris ◽  
Robert Dean ◽  
Ashish Palkar ◽  
Mike Palmer ◽  
Charles Ellis ◽  
...  
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Mems Devices ◽  
Microfabrication Technique ◽  
Mems Device ◽  
Low Temperature Bonding ◽  
Bonding Technique ◽  
Si Wafer

Low–temperature bonding techniques are of great importance in fabricating MEMS devices, and especially for sealing microfluidic MEMS devices that require encapsulation of a liquid. Although fusion, thermocompression, anodic and eutectic bonding have been successfully used in fabricating MEMS devices, they require temperatures higher than the boiling point of commonly used fluids in MEMS devices such as water, alcohols and ammonia. Although adhesives and glues have been successfully used in this application, they may contaminate the fluid in the MEMS device or the fluid may prevent suitable bonding. Indium (In) possesses the unusual property of being cold weldable. At room temperature, two sufficiently clean In surfaces can be cold welded by bringing them into contact with sufficient force. The bonding technique developed here consists of coating and patterning one Si wafer with 500A Ti, 300A Ni and 1 μm In through electron beam evaporation. A second wafer is metallized and patterned with a 500A Ti and 1 μm Cu by electron beam evaporation and then electroplated with 10 μm of In. Before the In coated sections are brought into contact, the In surfaces are chemically cleaned to remove indium-oxide. Then the sections are brought into contact and held under sufficient pressure to cold weld the sections together. Using this technique, MEMS water-filled and mercury-filled microheatpipes were successfully fabricated and tested. Additionally, this microfabrication technique is useful for fabricating other types of MEMS devices that are limited to low-temperature microfabrication processes.

Optimization of TiO 2 /Cu/TiO 2 multilayers as a transparent composite electrode deposited by electron-beam evaporation at room temperature

2015 ◽  
Vol 24 (4) ◽  
pp. 047701 ◽  
Author(s):  
Hong-Tao Sun ◽  
Xiao-Ping Wang ◽  
Zhi-Qi Kou ◽  
Li-Jun Wang ◽  
Jin-Ye Wang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Composite Electrode ◽  
Electron Beam Evaporation ◽  
Transparent Composite

scholarly journals Effect of Annealing Temperature on CuInSe2/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
H. Abdullah ◽  
S. Habibi
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
Thin Film Solar Cells ◽  
X Ray ◽  
Annealing Temperatures ◽  
Pure Cu ◽  
Deposited Films

CuInSe2(CIS) thin films are successfully prepared by electron beam evaporation. Pure Cu, In, and Se powders were mixed and ground in a grinder and made into a pellet. The pallets were deposited via electron beam evaporation on FTO substrates and were varied by varying the annealing temperatures, at room temperature, 250°C, 300°C, and 350°C. Samples were analysed by X-ray diffractometry (XRD) for crystallinity and field-emission scanning electron microscopy (FESEM) for grain size and thickness. I-V measurements were used to measure the efficiency of the CuInSe2/ZnS solar cells. XRD results show that the crystallinity of the films improved as the temperature was increased. The temperature dependence of crystallinity indicates polycrystalline behaviour in the CuInSe2films with (1 1 1), (2 2 0)/(2 0 4), and (3 1 2)/(1 1 6) planes at 27°, 45°, and 53°, respectively. FESEM images show the homogeneity of the CuInSe2formed. I-V measurements indicated that higher annealing temperatures increase the efficiency of CuInSe2solar cells from approximately 0.99% for the as-deposited films to 1.12% for the annealed films. Hence, we can conclude that the overall cell performance is strongly dependent on the annealing temperature.

Transport in Thermal Dip Pen Nanolithography

2004 ◽  
Author(s):  
Brent A. Nelson ◽  
Tanya L. Wright ◽  
William P. King ◽  
Paul E. Sheehan ◽  
Lloyd J. Whitman
Keyword(s):  
Electron Beam ◽  
Atomic Force Microscope ◽  
Electron Beam Lithography ◽  
Room Temperature ◽  
Optical Lithography ◽  
Ambient Conditions ◽  
Atomic Force ◽  
Resolution Limits ◽  
Dip Pen Nanolithography

The manufacture of nanoscale devices is at present constrained by the resolution limits of optical lithography and the high cost of electron beam lithography. Furthermore, traditional silicon fabrication techniques are quite limited in materials compatibility and are not well-suited for the manufacture of organic and biological devices. One nanomanufacturing technique that could overcome these drawbacks is dip pen nanolithography (DPN), in which a chemical-coated atomic force microscope (AFM) tip deposits molecular ‘inks’ onto a substrate [1]. DPN has shown resolution as good as 5 nm [2] and has been performed with a large number of molecules, but has limitations. For molecules to ink the surface they must be mobile at room temperature, limiting the inks that can be used, and since the inks must be mobile in ambient conditions, there is no way to stop the deposition while the tip is in contact with the substrate. In-situ imaging of deposited molecules therefore causes contamination of the deposited features.

Diffraction studies of cubic phase stability in undoped zirconia thin films

2000 ◽  
Vol 15 (2) ◽  
pp. 369-376 ◽  
Author(s):  
S. C. Moulzolf ◽  
R. J. Lad
Keyword(s):  
Grain Size ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Electron Cyclotron Resonance ◽  
High Energy ◽  
Electron Beam Evaporation ◽  
Fiber Axis ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Critical Grain Size

Pure stoichiometric ZrO2 films were deposited on amorphous silica substrates by electron beam evaporation of Zr in the presence of an electron cyclotron resonance oxygen plasma. Grain size, strain, and texture were analyzed by x-ray diffraction and reflection high-energy electron diffraction. Films grown at room temperature are polycrystalline and exist in the cubic phase. Growth at elevated temperatures produces coexisting cubic and monoclinic phases and shows a maximum critical grain size of ??~10 nm for stabilization of the cubic phase. Pole figure analysis indicates a preferred cubic [200] fiber axis for room-temperature growth and dual monoclinic {111} and in-plane textures for films grown at 400 °C. Postdeposition annealing experiments confirm the existence of a critical grain size and suggest mechanisms for grain growth.

Tunnel Type Magnetoresistance in Electron Beam Deposited Films of Compositions (Co0.5Fe0.5)x(Al2O3)(100-x) (7 ≤ x ≤ 52)

1999 ◽  
Vol 602 ◽  
Author(s):  
H.R. Khan ◽  
A. Ya Vovk ◽  
A.F. Kravets ◽  
O.V. Shipil ◽  
A.N. Pogoriliy
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Tunneling Magnetoresistance ◽  
Metal Insulator ◽  
Glass Substrates ◽  
Electron Beam Evaporation Technique ◽  
Crystallite Sizes ◽  
Evaporation Technique ◽  
Deposited Films

AbstractA series of 400 nm thick metal-insulator films of compositions (Co50Fe50)x(Al2O3(100-x) (7 ≤ x ≤ 52; x is in vol.%) are deposited on glass substrates using dual electron beam evaporation technique. The films are nanocrystalline with crystallite sizes of 1-3 nm. Resistivity of the films varies as a function of (I/T)0.5 showing a tunneling type behaviour. The films show isotropic and negative magnetoresistance (GMR). A film of composition (Co50Fe50)82.5(Al2O3)17.5 show maximum tunneling magnetoresistance (TMR) of 7.2% at room temperature and in a magnetic field of 8.2 kOe.

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