Influence of heat treatment on structural, electrical, impedance and optical properties of nanocrystalline ITO films grown on glass at room temperature prepared by electron beam evaporation

2007 ◽  
Vol 39 (1) ◽  
pp. 69-74 ◽  
Author(s):  
Hamid Reza Fallah ◽  
Mohsen Ghasemi ◽  
Ali Hassanzadeh
Keyword(s):  
Heat Treatment ◽  
Optical Properties ◽  
Electron Beam ◽  
Room Temperature ◽  
Electrical Impedance ◽  
Electron Beam Evaporation ◽  
Ito Films

scholarly journals Properties of Silicon Dioxide Amorphous Nanopowder Produced by Pulsed Electron Beam Evaporation

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Vladislav G. Il’ves ◽  
Michael G. Zuev ◽  
Sergey Yu. Sokovnin
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
Silicon Dioxide ◽  
Specific Surface ◽  
Surface Area ◽  
Specific Surface Area ◽  
Room Temperature ◽  
Luminescent Properties ◽  
Electron Beam Evaporation ◽  
Pulsed Electron Beam

SiO2amorphous nanopowder (NP) is produced with the specific surface area of 154 m2/g by means of evaporation by a pulsed electron beam aimed at Aerosil 90 pyrogenic amorphous NP (90 m2/g) as a target. SiO2NP nanoparticles showed improved magnetic, thermal, and optical properties in comparison to Aerosil 90 NP. Possible reasons of emergence of d0ferromagnetism at the room temperature in SiO2amorphous NP are discussed. Photoluminescent and cathode luminescent properties of the SiO2NP were investigated.

scholarly journals CHARACTERISTICS OF LITHIUM LANTHANUM TITANATE THIN FILMS MADE BY ELECTRON BEAM EVAPORATION FROM NANOSTRUCTURED La0.67-xLi 3xTiO3 TARGET

2017 ◽  
Vol 25 (2) ◽  
pp. 243-250
Author(s):  
Nguyen Nang Dinh ◽  
Le Dinh Trong ◽  
Pham Duy Long
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ionic Conductivity ◽  
Room Temperature ◽  
Xrd Analysis ◽  
Electron Beam Evaporation ◽  
Electrochromic Devices ◽  
Lanthanum Titanate ◽  
Average Size ◽  
Beam Deposition

Bulk nanostructured perovskites of La0.67-xLi3xTiO3 (LLTO) were prepared by using thermally ball-grinding from compounds of La2O3, Li2CO3 and TiO2. From XRD analysis, it was found that LTTO materials were crystallized with nano-size grains of an average size of 30 nm. The bulk ionic conductivity was found strongly dependent on the Li+ composition, the samples with x = 0.11 (corresponding to a La0.56Li0.33TiO3 compound) have the best ionic conductivity, which is ca. 3.2 x 10-3 S/cm at room temperature. The LLTO amorphous films were made by electron beam deposition. At room temperature the smooth films have ionic conductivity of 3.5 x 10-5  S/cm and transmittance of 80%. The optical bandgap of the films was found to be of 2.3 eV. The results have shown that the perovskite La0.56Li0.33TiO3  thin films can be used for a transparent solid electrolyte in ionic battery and in all-solid-state electrochromic devices, in particular.    

Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

Low-Temperature Indium Bonding for MEMS Devices

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 002543-002566
Author(s):  
Daniel Harris ◽  
Robert Dean ◽  
Ashish Palkar ◽  
Mike Palmer ◽  
Charles Ellis ◽  
...  
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Mems Devices ◽  
Microfabrication Technique ◽  
Mems Device ◽  
Low Temperature Bonding ◽  
Bonding Technique ◽  
Si Wafer

Low–temperature bonding techniques are of great importance in fabricating MEMS devices, and especially for sealing microfluidic MEMS devices that require encapsulation of a liquid. Although fusion, thermocompression, anodic and eutectic bonding have been successfully used in fabricating MEMS devices, they require temperatures higher than the boiling point of commonly used fluids in MEMS devices such as water, alcohols and ammonia. Although adhesives and glues have been successfully used in this application, they may contaminate the fluid in the MEMS device or the fluid may prevent suitable bonding. Indium (In) possesses the unusual property of being cold weldable. At room temperature, two sufficiently clean In surfaces can be cold welded by bringing them into contact with sufficient force. The bonding technique developed here consists of coating and patterning one Si wafer with 500A Ti, 300A Ni and 1 μm In through electron beam evaporation. A second wafer is metallized and patterned with a 500A Ti and 1 μm Cu by electron beam evaporation and then electroplated with 10 μm of In. Before the In coated sections are brought into contact, the In surfaces are chemically cleaned to remove indium-oxide. Then the sections are brought into contact and held under sufficient pressure to cold weld the sections together. Using this technique, MEMS water-filled and mercury-filled microheatpipes were successfully fabricated and tested. Additionally, this microfabrication technique is useful for fabricating other types of MEMS devices that are limited to low-temperature microfabrication processes.

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