Tunnel Type Magnetoresistance in Electron Beam Deposited Films of Compositions (Co0.5Fe0.5)x(Al2O3)(100-x) (7 ≤ x ≤ 52)

1999 ◽  
Vol 602 ◽  
Author(s):  
H.R. Khan ◽  
A. Ya Vovk ◽  
A.F. Kravets ◽  
O.V. Shipil ◽  
A.N. Pogoriliy
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Tunneling Magnetoresistance ◽  
Metal Insulator ◽  
Glass Substrates ◽  
Electron Beam Evaporation Technique ◽  
Crystallite Sizes ◽  
Evaporation Technique ◽  
Deposited Films

AbstractA series of 400 nm thick metal-insulator films of compositions (Co50Fe50)x(Al2O3(100-x) (7 ≤ x ≤ 52; x is in vol.%) are deposited on glass substrates using dual electron beam evaporation technique. The films are nanocrystalline with crystallite sizes of 1-3 nm. Resistivity of the films varies as a function of (I/T)0.5 showing a tunneling type behaviour. The films show isotropic and negative magnetoresistance (GMR). A film of composition (Co50Fe50)82.5(Al2O3)17.5 show maximum tunneling magnetoresistance (TMR) of 7.2% at room temperature and in a magnetic field of 8.2 kOe.

Influence of Substrate Temperature on Tin Oxide Thin Films Deposited by Electron Beam Evaporation Technique

1992 ◽  
Vol 242 ◽  
Author(s):  
S. M. Rozati ◽  
S. Mirzapour ◽  
M. G. Takwale ◽  
B. R. Marathe ◽  
V. G. Bhide
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Electron Beam Evaporation ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Influence Of Substrate ◽  
Tin Oxide Films ◽  
Deposited Films

ABSTRACTTransparent conducting tin oxide films were prepared by an electron beam evaporation technique. As-deposited films were amorphous or polycrystalline depending on the substrate temperature and the time of deposition. In order to get transparent and conducting thin films of SnO2, as-deposited films were subjected to further heat-treatment in air at 650°C for 2 hours. Physical properties of as-deposited and annealed films are discussed with reference to substrate temperature and deposition time.

Thickness dependent electrical characterization of electron beam evaporated n-type CdSe thin films

2010 ◽  
Vol 7 (2) ◽  
pp. 495-498
Author(s):  
S. R. Vishwakarma ◽  
Aneet Kumar Verma ◽  
Ravishankar Nath Tripathi ◽  
Rahul. Rahul
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Characterization ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Different Thickness ◽  
Deposited Films

The prepared starting materials has composition Cd0.60Se0.40 was used to fabrication of thin films. Cadmium selenide thin films of different thickness (400nm-700nm) deposited by electron beam evaporation technique on well cleaned glass substrate at substrate temperature 300 K. The X-ray diffraction pattern confirmed that the prepared thin films of composition Cd 0.60Se 0.40 has polycrystalline in nature. The resistivity, conductivity, Hall mobility, carrier concentration of the deposited films were calculated of different films thickness..

Properties of CdS films deposited by the electron beam evaporation technique

2010 ◽  
Vol 503 (1) ◽  
pp. 170-176 ◽  
Author(s):  
K. Sivaramamoorthy ◽  
S. Asath Bahadur ◽  
M. Kottaisamy ◽  
K.R. Murali
Keyword(s):  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Cds Films
Sign in / Sign up

Export Citation Format

Share Document