Construction, characterization, and growth mechanism of high-density jellyfish-like GaN/SiOxNy nanomaterials on p-Si substrate by Au-assisted chemical vapor deposition approach

CrystEngComm ◽  
2019 ◽  
Vol 21 (26) ◽  
pp. 3966-3973 ◽  
Author(s):  
Pengkun Li ◽  
Kang Li ◽  
Shujing Sun ◽  
Chenlong Chen ◽  
B. G. Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Density ◽  
Si Substrate ◽  
Si Substrates ◽  
P Type

High-density GaN/SiOxNy jellyfish-like nanomaterials are synthesized on Au-coated p-type Si substrates by a chemical vapor deposition approach.

scholarly journals Fabrication of Si3N4Nanocrystals and Nanowires Using PECVD

2010 ◽  
Vol 2010 ◽  
pp. 1-4 ◽  
Author(s):  
Jingwei Song ◽  
Xiying Ma ◽  
Wang Zui ◽  
Chen Wei ◽  
Zhongpin Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Si Substrates ◽  
Fe Catalyst ◽  
Reactive Gases ◽  
Fe Ions ◽  
S Deposition

Si3N4nanowires and nanocrystals were prepared on Si substrates with or without Fe catalyst using silane (SiH4) and nitrogen (N2) as reactive gases through plasma-enhanced chemical vapor deposition (PECVD) technology. With Fe catalyst,Si3N4nanowires were developed, indicating that Fe catalyst played a role forSi3N4molecules directionally depositing into strings. The density of the nanowires is closely related to the density of Fe catalyst. When the density of Fe ions on the substrate was decreased remarkably, a smooth superlongSi3N4nanowire with 12 μm in length was fabricated. Having analyzed the growth mechanism, a growth model forSi3N4nanowires was developed. The growth ofSi3N4nanocrystallines was attributed to be a vapor-solid (V-S) deposition process.

scholarly journals Research on the Preparation and Spectral Characteristics of Graphene/TMDs Hetero-structures

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Tao Han ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Kun Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Spectral Characteristics ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Si Substrate ◽  
Broadband Absorption ◽  
Gate Effect ◽  
Pressure Chemical

AbstractThe Van der Waals (vdWs) hetero-structures consist of two-dimensional materials have received extensive attention, which is due to its attractive electrical and optoelectronic properties. In this paper, the high-quality large-size graphene film was first prepared by the chemical vapor deposition (CVD) method; then, graphene film was transferred to SiO2/Si substrate; next, the graphene/WS2 and graphene/MoS2 hetero-structures were prepared by the atmospheric pressure chemical vapor deposition method, which can be achieved by directly growing WS2 and MoS2 material on graphene/SiO2/Si substrate. Finally, the test characterization of graphene/TMDs hetero-structures was performed by AFM, SEM, EDX, Raman and PL spectroscopy to obtain and grasp the morphology and luminescence laws. The test results show that graphene/TMDs vdWs hetero-structures have the very excellent film quality and spectral characteristics. There is the built-in electric field at the interface of graphene/TMDs heterojunction, which can lead to the effective separation of photo-generated electron–hole pairs. Monolayer WS2 and MoS2 material have the strong broadband absorption capabilities, the photo-generated electrons from WS2 can transfer to the underlying p-type graphene when graphene/WS2 hetero-structures material is exposed to the light, and the remaining holes can induced the light gate effect, which is contrast to the ordinary semiconductor photoconductors. The research on spectral characteristics of graphene/TMDs hetero-structures can pave the way for the application of novel optoelectronic devices.

Self-Organized Microcones Grown on Si Substrate by Microwave Plasma Chemical Vapor Deposition

2008 ◽  
Vol 47 (4) ◽  
pp. 3050-3052
Author(s):  
Masataka Moriya ◽  
Yuji Matsumoto ◽  
Yoshinao Mizugaki ◽  
Tadayuki Kobayashi ◽  
Kouichi Usami
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Self Organized
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