High performance, self-powered photodetectors based on a graphene/silicon Schottky junction diode

2018 ◽  
Vol 6 (35) ◽  
pp. 9545-9551 ◽  
Author(s):  
Dharmaraj Periyanagounder ◽  
Paulraj Gnanasekar ◽  
Purushothaman Varadhan ◽  
Jr-Hau He ◽  
Jeganathan Kulandaivel
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
High Performance ◽  
Photon Absorption ◽  
Schottky Junction ◽  
Zero Bias ◽  
Junction Diode ◽  
Vdw Heterostructure ◽  
Self Powered ◽  
532 Nm

In this work, we design and demonstrate a graphene/silicon (Gr/Si) van der Walls (vdW) heterostructure for high-performance photodetectors, where graphene acts as an efficient carrier collector and Si as a photon absorption layer. The Gr/Si heterojunction exhibits superior Schottky diode characteristics with a barrier height of 0.76 eV and performs well as a self-powered detector responding to 532 nm at zero bias.

scholarly journals Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Amir Muhammad Afzal ◽  
In-Gon Bae ◽  
Yushika Aggarwal ◽  
Jaewoo Park ◽  
Hye-Ryeon Jeong ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Bias Voltage ◽  
High Performance ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Zero Bias ◽  
Decay Times ◽  
Order Of Magnitude ◽  
Self Powered

AbstractHybrid organic–inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W−1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W−1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of − 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.

Analysis of current–voltage and capacitance–voltage characteristics of Zr/p-Si Schottky diode with high series resistance

2020 ◽  
Vol 34 (10) ◽  
pp. 2050095
Author(s):  
Durmuş Ali Aldemir
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Series Resistance ◽  
Zero Bias ◽  
Acceptor Concentration ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
High Series ◽  
Contact Parameters

Zr/p-Si Schottky diode was fabricated by DC magnetic sputtering of Zr on p-Si. Zr rectifying contact gave a zero bias barrier height of 0.73 eV and an ideality factor of 1.33 by current–voltage measurement. The experimental zero bias barrier height was higher than the value predicted by metal-induced gap states (MIGSs) and electronegativity theory. The forward bias current was limited by high series resistance. The series resistance value of 9840 [Formula: see text] was determined from Cheung functions. High value of the series resistance was ascribed to low quality ohmic contact. In addition to Cheung functions, important contact parameters such as barrier height and series resistance were calculated by using modified Norde method. Re-evaluation of modified Norde functions was realized in the direction of the method proposed by Lien et al. [IEEE Trans. Electron Devices 31 (1984) 1502]. From the method, the series resistance and ideality factor values were found to be as 41.49 [Formula: see text] and 2.08, respectively. The capacitance–voltage characteristics of the diode were measured as a function of frequency. For a wide range of applied frequency, the contact parameters calculated from [Formula: see text]–[Formula: see text] curves did not exhibit frequency dependence. The barrier height value of 0.71 eV which was in close agreement with the value of zero bias barrier height was calculated from [Formula: see text]–[Formula: see text] plot at 1 MHz. The values of acceptor concentration obtained from [Formula: see text]–[Formula: see text] curves showed consistency with actual acceptor concentration of p-Si.

High-performance self-powered perovskite photodetector with a rapid photoconductive response

RSC Advances ◽  
2016 ◽  
Vol 6 (107) ◽  
pp. 105076-105080 ◽  
Author(s):  
Kavita Pandey ◽  
Mihirsinh Chauhan ◽  
Vishwa Bhatt ◽  
Brijesh Tripathi ◽  
Pankaj Yadav ◽  
...  
Keyword(s):  
High Speed ◽  
High Performance ◽  
Electronic Devices ◽  
Schottky Junction ◽  
Next Generation ◽  
Self Powered

Here we report the development of a self-powered high-speed perovskite Schottky junction photodiode, which is very important for next-generation electronic devices.

Surface Transfer Doping-Induced, High-Performance Graphene/Silicon Schottky Junction-Based, Self-Powered Photodetector

Small ◽  
2015 ◽  
Vol 11 (37) ◽  
pp. 4829-4836 ◽  
Author(s):  
Du Xiang ◽  
Cheng Han ◽  
Zehua Hu ◽  
Bo Lei ◽  
Yiyang Liu ◽  
...  
Keyword(s):  
High Performance ◽  
Schottky Junction ◽  
Self Powered

High-performance broadband photoresponse of self-powered Mg2Si/Si photodetectors

2021 ◽  
Author(s):  
Qinghai Zhu ◽  
Peng Ye ◽  
Youmei Tang ◽  
Xiaodong Zhu ◽  
Zhiyuan Cheng ◽  
...  
Keyword(s):  
High Performance ◽  
Low Cost ◽  
Spectral Response ◽  
Incident Light ◽  
Cmos Technology ◽  
Infrared Light ◽  
Electric Field Effect ◽  
Zero Bias ◽  
Specific Detectivity ◽  
Self Powered

Abstract Infrared optoelectronic devices are capable of operating in harsh environments with outstanding confidentiality and reliability. Nevertheless, suffering from the large band gap value, most semiconductor materials are difficult to detect infrared light signals. Here, Mg2Si/Si heterojunction photodetectors (PDs), which possess the advantages of low-cost, easy process, environmental friendliness, and compatibility with silicon CMOS technology, have been reported with a broadband spectral response as tested from 532 to 1550 nm under zero-bias. When the incident light wavelength is 808 nm, the Mg2Si/Si photodetector (PD) has a responsivity of 1.04 A/W and a specific detectivity of 1.51 × 1012 Jones. Furthermore, we find that the Ag nanoparticles (Ag_NPs) assembled on the Mg2Si layer can greatly improve the performance of the Mg2Si/Si PD. The responsivity and specific detectivity of Mg2Si/Si device with Ag_NPs under 808 nm illumination are 2.55 A/W and 2.60 × 1012 Jones, respectively. These excellent photodetection performances can be attributed to the high-quality of our grown Mg2Si material and the strong built-in electric field effect in the heterojunction, which can be further enhanced by the local surface plasmon effect and local electromagnetic field induced by Ag_NPs. Our study would provide significant guidance for the development of new self-powered infrared PDs based on silicon materials.

A highly oriented conductive MOF thin film-based Schottky diode for self-powered light and gas detection

2020 ◽  
Vol 8 (18) ◽  
pp. 9085-9090 ◽  
Author(s):  
Lin-An Cao ◽  
Ming-Shui Yao ◽  
Hui-Jie Jiang ◽  
Susumu Kitagawa ◽  
Xiao-Liang Ye ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Gas Detection ◽  
High Quality ◽  
Self Powered

High-quality EC-MOF thin films are used to modulate the Schottky barrier height and detect light/gas by self-powered mode.

High-performance self-powered UV-Vis-NIR photodetectors based on horizontally aligned GaN microwire array/Si heterojunctions

2017 ◽  
Vol 5 (44) ◽  
pp. 11551-11558 ◽  
Author(s):  
Weidong Song ◽  
Xingfu Wang ◽  
Hang Chen ◽  
Dexiao Guo ◽  
Mingyue Qi ◽  
...  
Keyword(s):  
High Performance ◽  
Zero Bias ◽  
Self Powered

High-performance self-powered photodetectors based on GaN microwire array/Si heterojunctions show a broadband photoresponse with high EQE, responsivity and detectivity at zero bias.

Sb2S3/Spiro-OMeTAD Inorganic–Organic Hybrid p–n Junction Diode for High Performance Self-Powered Photodetector

2016 ◽  
Vol 8 (50) ◽  
pp. 34506-34512 ◽  
Author(s):  
Ashok Bera ◽  
Ayon Das Mahapatra ◽  
Sulakshana Mondal ◽  
Durga Basak
Keyword(s):  
High Performance ◽  
Organic Hybrid ◽  
Junction Diode ◽  
Self Powered
Sign in / Sign up

Export Citation Format

Share Document