High-performance self-powered UV-Vis-NIR photodetectors based on horizontally aligned GaN microwire array/Si heterojunctions

2017 ◽  
Vol 5 (44) ◽  
pp. 11551-11558 ◽  
Author(s):  
Weidong Song ◽  
Xingfu Wang ◽  
Hang Chen ◽  
Dexiao Guo ◽  
Mingyue Qi ◽  
...  
Keyword(s):  
High Performance ◽  
Zero Bias ◽  
Self Powered

High-performance self-powered photodetectors based on GaN microwire array/Si heterojunctions show a broadband photoresponse with high EQE, responsivity and detectivity at zero bias.

scholarly journals Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Amir Muhammad Afzal ◽  
In-Gon Bae ◽  
Yushika Aggarwal ◽  
Jaewoo Park ◽  
Hye-Ryeon Jeong ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Bias Voltage ◽  
High Performance ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Zero Bias ◽  
Decay Times ◽  
Order Of Magnitude ◽  
Self Powered

AbstractHybrid organic–inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W−1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W−1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of − 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.

High-performance broadband photoresponse of self-powered Mg2Si/Si photodetectors

2021 ◽  
Author(s):  
Qinghai Zhu ◽  
Peng Ye ◽  
Youmei Tang ◽  
Xiaodong Zhu ◽  
Zhiyuan Cheng ◽  
...  
Keyword(s):  
High Performance ◽  
Low Cost ◽  
Spectral Response ◽  
Incident Light ◽  
Cmos Technology ◽  
Infrared Light ◽  
Electric Field Effect ◽  
Zero Bias ◽  
Specific Detectivity ◽  
Self Powered

Abstract Infrared optoelectronic devices are capable of operating in harsh environments with outstanding confidentiality and reliability. Nevertheless, suffering from the large band gap value, most semiconductor materials are difficult to detect infrared light signals. Here, Mg2Si/Si heterojunction photodetectors (PDs), which possess the advantages of low-cost, easy process, environmental friendliness, and compatibility with silicon CMOS technology, have been reported with a broadband spectral response as tested from 532 to 1550 nm under zero-bias. When the incident light wavelength is 808 nm, the Mg2Si/Si photodetector (PD) has a responsivity of 1.04 A/W and a specific detectivity of 1.51 × 1012 Jones. Furthermore, we find that the Ag nanoparticles (Ag_NPs) assembled on the Mg2Si layer can greatly improve the performance of the Mg2Si/Si PD. The responsivity and specific detectivity of Mg2Si/Si device with Ag_NPs under 808 nm illumination are 2.55 A/W and 2.60 × 1012 Jones, respectively. These excellent photodetection performances can be attributed to the high-quality of our grown Mg2Si material and the strong built-in electric field effect in the heterojunction, which can be further enhanced by the local surface plasmon effect and local electromagnetic field induced by Ag_NPs. Our study would provide significant guidance for the development of new self-powered infrared PDs based on silicon materials.

High performance, self-powered photodetectors based on a graphene/silicon Schottky junction diode

2018 ◽  
Vol 6 (35) ◽  
pp. 9545-9551 ◽  
Author(s):  
Dharmaraj Periyanagounder ◽  
Paulraj Gnanasekar ◽  
Purushothaman Varadhan ◽  
Jr-Hau He ◽  
Jeganathan Kulandaivel
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
High Performance ◽  
Photon Absorption ◽  
Schottky Junction ◽  
Zero Bias ◽  
Junction Diode ◽  
Vdw Heterostructure ◽  
Self Powered ◽  
532 Nm

In this work, we design and demonstrate a graphene/silicon (Gr/Si) van der Walls (vdW) heterostructure for high-performance photodetectors, where graphene acts as an efficient carrier collector and Si as a photon absorption layer. The Gr/Si heterojunction exhibits superior Schottky diode characteristics with a barrier height of 0.76 eV and performs well as a self-powered detector responding to 532 nm at zero bias.

scholarly journals High performance self-powered photodetector based on 1D Te-2D WS2 mixed-dimensional heterostructure

2021 ◽  
Author(s):  
Lixiang Han ◽  
Mengmeng Yang ◽  
Peiting Wen ◽  
Wei Gao ◽  
nengjie huo ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Sharp Interface ◽  
Two Dimensional ◽  
High Quality ◽  
One Dimensional ◽  
Self Powered

One dimensional (1D)-two dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. The...

High‐Performance Flexible Self‐Powered Photodetectors Utilizing Spontaneous Electron and Hole Separation in Quasi‐2D Halide Perovskites

Small ◽  
2021 ◽  
pp. 2100442
Author(s):  
Zhengxun Lai ◽  
You Meng ◽  
Qi Zhu ◽  
Fei Wang ◽  
Xiuming Bu ◽  
...  
Keyword(s):  
High Performance ◽  
Halide Perovskites ◽  
Self Powered

scholarly journals Direct coherent multi-ink printing of fabric supercapacitors

2021 ◽  
Vol 7 (3) ◽  
pp. eabd6978 ◽  
Author(s):  
Jingxin Zhao ◽  
Hongyu Lu ◽  
Yan Zhang ◽  
Shixiong Yu ◽  
Oleksandr I. Malyi ◽  
...  
Keyword(s):  
System Integration ◽  
High Performance ◽  
Mechanical Stability ◽  
Three Dimensional ◽  
High Mass ◽  
Wearable Electronics ◽  
Energy Storage Devices ◽  
Fabrication Procedure ◽  
Self Powered ◽  
Mechanical Devices

Coaxial fiber-shaped supercapacitors with short charge carrier diffusion paths are highly desirable as high-performance energy storage devices for wearable electronics. However, the traditional approaches based on the multistep fabrication processes for constructing the fiber-shaped energy device still encounter persistent restrictions in fabrication procedure, scalability, and mechanical durability. To overcome this critical challenge, an all-in-one coaxial fiber-shaped asymmetric supercapacitor (FASC) device is realized by a direct coherent multi-ink writing three-dimensional printing technology via designing the internal structure of the coaxial needles and regulating the rheological property and the feed rates of the multi-ink. Benefitting from the compact coaxial structure, the FASC device delivers a superior areal energy/power density at a high mass loading, and outstanding mechanical stability. As a conceptual exhibition for system integration, the FASC device is integrated with mechanical units and pressure sensor to realize high-performance self-powered mechanical devices and monitoring systems, respectively.

scholarly journals Self-Powered All-Inorganic Perovskite Photodetectors with Fast Response Speed

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Ting Zhang ◽  
Shibin Li
Keyword(s):  
High Performance ◽  
Solution Process ◽  
Response Speed ◽  
Fast Response ◽  
Single Step ◽  
Inorganic Perovskite ◽  
Perovskite Materials ◽  
Photoactive Materials ◽  
Self Powered ◽  
Solvent Processing

AbstractIn this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offer higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3−x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve high-performance, self-powered and the stabilized photodetectors show fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3−x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.

High performance self-powered CuZnS/GaN UV photodetectors with ultrahigh on/off ratio (3 × 108)

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song
Keyword(s):  
Chemical Bath Deposition ◽  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Simple Chemical ◽  
Self Powered

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.

High performance, self-powered and thermally stable 200–750 nm spectral responsive gallium nitride (GaN) based broadband photodetectors

2021 ◽  
Vol 225 ◽  
pp. 111033
Author(s):  
Nanda Kumar Reddy Nallabala ◽  
Srinivas Godavarthi ◽  
Venkata Krishnaiah Kummara ◽  
Mohan Kumar Kesarla ◽  
C. Yuvaraj ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
High Performance ◽  
Thermally Stable ◽  
Self Powered
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