A highly oriented conductive MOF thin film-based Schottky diode for self-powered light and gas detection

2020 ◽  
Vol 8 (18) ◽  
pp. 9085-9090 ◽  
Author(s):  
Lin-An Cao ◽  
Ming-Shui Yao ◽  
Hui-Jie Jiang ◽  
Susumu Kitagawa ◽  
Xiao-Liang Ye ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Gas Detection ◽  
High Quality ◽  
Self Powered

High-quality EC-MOF thin films are used to modulate the Schottky barrier height and detect light/gas by self-powered mode.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

scholarly journals Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

2018 ◽  
Vol 15 (11) ◽  
pp. 803-809
Author(s):  
Doldet TANTRAVIWAT ◽  
Wittawat YAMWONG ◽  
Udom TECHAKIJKAJORN ◽  
Kazuo IMAI ◽  
Burapat INCEESUNGVORN
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Implantation Technique ◽  
Metal Line ◽  
Type Silicon ◽  
Boron Implantation ◽  
Line Process

Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with improved rectification and their effective SBHs increased from 0.49 to 0.95. The tuning of the effective SBH is mainly attributed to the presence of shallow p-layer, which modifies the energy band at Ti/n-Si interface. This work clearly shows that the ability to precisely control the SBH, regardless of the metal work function, would facilitate the implementation of Schottky diode into various semiconductor structures, such as MPS (Merged PiN Schottky) diode, in order to improve performance without major modification on the existing metal line process.

Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

2008 ◽  
Vol 63 (3-4) ◽  
pp. 199-202 ◽  
Author(s):  
Ahmet Faruk Ozdemir ◽  
Adnan Calik ◽  
Guven Cankaya ◽  
Osman Sahin ◽  
Nazim Ucar
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Vickers Microhardness ◽  
Schottky Barrier Diodes ◽  
Microhardness Test ◽  
Current Voltage

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.

Effects of Self-Ion Bombardment on Al/Si(n) Schottky Barrier Formation

1986 ◽  
Vol 77 ◽  
Author(s):  
J. Wong ◽  
S.-N. Mei ◽  
T.-M. Lu
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Graphite Crucible ◽  
Barrier Formation ◽  
Expansion Technique ◽  
Al Thin Film ◽  
Deposited Films ◽  
Deposition Techniques

ABSTRACTWe have employed a nozzle jet expansion technique to deposit Al thin film on chemically cleaned Si(n) surface. Pure Al is evaporated in a graphite crucible at a temperature of 15 50°C and is then ejected through a small nozzle into a vacuum region of 10-6 Torr. The Schottky barrier height of the as-deposited films is measured (using the J-V technique) to be 0.77eV, which is substantially higher than that obtained by conventional evaporation-deposition techniques(≤0.68eV). Our result suggests that an intimate Al/Si(n) contact has been formed during the jet expansion deposition of Al films.During the deposition, the Al jet beam can be partially ionized by electron bombardment. It is shown that the Schottky barrier height remain unchanged if a bias potential of V s0.5KeV is applied to the substrate during deposition. For Va >0.5 KeV, the diode became leaky and the barrier height was reduced. The energetic of the jet beam, with and without post ionization and acceleration, is discussed with respect to thin film and interface formation.

Metal induced inhomogeneous Schottky barrier height in AlGaN/GaN Schottky diode

2013 ◽  
Vol 102 (24) ◽  
pp. 243505 ◽  
Author(s):  
Jong-Hoon Shin ◽  
Jinhong Park ◽  
SeungYup Jang ◽  
T. Jang ◽  
Kyu Sang Kim
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height

Interfacial Diffusion/Reaction and Electrical Properties of Pd Ultra-Thin Film on Sic at Different Annealing Temperatures

1998 ◽  
Vol 512 ◽  
Author(s):  
W. Lu ◽  
D. T. Shi ◽  
W. E. Collins ◽  
H. Chen ◽  
A. Burger
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Hydrogen Gas ◽  
Diffusion Reaction ◽  
Scanning Tunneling ◽  
Annealing Temperatures ◽  
Ultra Thin Film

ABSTRACTPd/SiC has been used as a high temperature hydrocarbon and hydrogen gas sensor in environmental and aeronautical applications. In this work, the relationships between diffusion, reaction, and interfacial chemical composition with electrical properties for Pd ultra-thin films on 6H-SiC (∼< 30Å) are studied at different annealing temperatures.Ultra-thin film Pd on 6H-SiC has been prepared by the RF sputtering method. The Schottky barrier heights are measured by XPS for an unannealed sample and samples annealed from 100°C to 400°C for 30 minutes, respectively. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range. The morphology from UHV-STM and AFM show that the unannealed Pd thin film had good uniformity across the SiC substrate, and the Pd has dispersed, and then partially aggregated into rounded shaped precipitates with increasing annealing temperatures. At 400°C, all Pd metal has reacted and formed to silicides. From XPS, Pd2Si was found on the surface after annealing, and almost all Pd has reacted to become Pd2Si after annealing at 400°C. No other silicide was found. The intensity of Pd on XPS decreases enormously at 400°C. This is explained if Pd has diffused into SiC. The Pd diffusion and the formation of Pd silicides do not significantly affect the Schottky barrier height. The SiO2 was found at the top of surface after annealing, and increased in amount with increasing annealing temperature. The SiO2 formation was accelerated by the presence of Pd. Pd may play a role in absorbing oxygen, and activating Si from SiC to form SiO2.Key Words: Pd thin film, SiC, X-ray photoelectron spectroscopy, scanning tunneling microscopy, and atomic force microscopy.

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