The chemistry of CVD graphene

2018 ◽  
Vol 6 (23) ◽  
pp. 6082-6101 ◽  
Author(s):  
Jan Plutnar ◽  
Martin Pumera ◽  
Zdeněk Sofer
Keyword(s):  
Epitaxial Growth ◽  
Chemical Modifications ◽  
Cvd Graphene ◽  
Graphene Synthesis

This review covers all aspects of possible graphene synthesis by CVD deposition and epitaxial growth, its doping and chemical modifications published to date.

scholarly journals Influence of the Total Gas Flow at Different Reaction Times for CVD-Graphene Synthesis on Polycrystalline Nickel

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
M. P. Lavin-Lopez ◽  
J. L. Valverde ◽  
L. Sanchez-Silva ◽  
A. Romero
Keyword(s):  
Reaction Time ◽  
Gas Flow ◽  
Reaction Times ◽  
Monolayer Graphene ◽  
Graphene Monolayer ◽  
Multilayer Graphene ◽  
Reaction Step ◽  
Polycrystalline Nickel ◽  
Cvd Graphene ◽  
Graphene Synthesis

Optimization of the total gas flow (CH4+H2) during the reaction step for different reaction times for CVD-graphene synthesis on polycrystalline nickel foil using an atmospheric pressure set-up is reported. Athickness valuerelated to number of graphene layers in each of the synthesized samples was determined using an Excel-VBA application. This method assigned athickness valuebetween 1 and 1000 and provided information on the percentage of each type of graphene (monolayer, bilayer, and multilayer) deposited onto the polycrystalline nickel sheet. The influence of the total gas flow during the reaction step and the reaction time was studied in detail. Optical microscopy showed that samples were covered with different types of graphene, such as multilayer, few-layer, bilayer, and monolayer graphene. The synthesis variables were optimized according to thethickness valueand the results were verified by Raman spectroscopy. The best conditions were obtained with a reaction temperature of 980°C, a CH4/H2flow rate ratio of 0.07 v/v, a reaction time of 1 minute, and a total gas flow of 80 NmL/min. In the sample obtained under the optimized conditions, 80% of the area was covered with monolayer graphene and less than 1% with multilayer graphene.

Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates

2016 ◽  
Vol 8 (49) ◽  
pp. 33786-33793 ◽  
Author(s):  
M. Lukosius ◽  
J. Dabrowski ◽  
J. Kitzmann ◽  
O. Fursenko ◽  
F. Akhtar ◽  
...  
Keyword(s):  
Cvd Graphene ◽  
Metal Free ◽  
Graphene Synthesis

Synthesis of CVD-graphene on rapidly heated copper foils

Nanoscale ◽  
2014 ◽  
Vol 6 (9) ◽  
pp. 4728-4734 ◽  
Author(s):  
Sang-Min Kim ◽  
Jae-Hyun Kim ◽  
Kwang-Seop Kim ◽  
Yun Hwangbo ◽  
Jong-Hyuk Yoon ◽  
...  
Keyword(s):  
Structural Properties ◽  
Mass Production ◽  
Rapid Heating ◽  
Copper Catalyst ◽  
Cvd Graphene ◽  
Copper Foils ◽  
Graphene Synthesis ◽  
Time Required

Rapid heating of a copper catalyst can greatly reduce the time required for CVD-graphene synthesis, which may make the mass production of graphene with good electrical and structural properties possible.

scholarly journals Early stage of CVD graphene synthesis on Ge(001) substrate

Carbon ◽  
2018 ◽  
Vol 134 ◽  
pp. 183-188 ◽  
Author(s):  
L. Di Gaspare ◽  
A.M. Scaparro ◽  
M. Fanfoni ◽  
L. Fazi ◽  
A. Sgarlata ◽  
...  
Keyword(s):  
Early Stage ◽  
Cvd Graphene ◽  
Graphene Synthesis

scholarly journals Comparing the methods of copper substrate polishing for CVD graphene synthesis

2021 ◽  
Vol 2057 (1) ◽  
pp. 012121
Author(s):  
I A Kostogrud ◽  
E V Boyko ◽  
P E Matochkin ◽  
D V Sorokin
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Copper Substrate ◽  
Chemical Vapour ◽  
Cvd Graphene ◽  
Graphene Coating ◽  
Plasma Electrolyte ◽  
Graphene Synthesis ◽  
Cvd Synthesis

Abstract This paper presents a comparison of chemical and plasma electrolyte polishing methods for preparing a copper substrate for graphene synthesis by chemical vapour deposition. It is shown that in order to achieve the most uniform morphology of the surface of the copper substrate, it is preferable to use the electrolyte-plasma polishing method. With its help, the proportion of multilayer regions in the graphene coating obtained as a result of CVD synthesis decreases. The obtained results may serve a recommendation for creating a graphene coating with specified parameters.

Direct epitaxial CVD synthesis of tungsten disulfide on epitaxial and CVD graphene

RSC Advances ◽  
2015 ◽  
Vol 5 (119) ◽  
pp. 98700-98708 ◽  
Author(s):  
G. V. Bianco ◽  
M. Losurdo ◽  
M. M. Giangregorio ◽  
A. Sacchetti ◽  
P. Prete ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Tungsten Disulfide ◽  
Cvd Graphene ◽  
Cvd Synthesis

Direct epitaxial growth of WS2 isolated crystals and WS2 continuous films onto epitaxial- and CVD-graphene providing a homogeneous and narrow PL peak.

Turbostratic multilayer graphene synthesis on CVD graphene template toward improving electrical performance

2019 ◽  
Vol 58 (SI) ◽  
pp. SIIB04 ◽  
Author(s):  
Chaopeng Wei ◽  
Ryota Negishi ◽  
Yui Ogawa ◽  
Masashi Akabori ◽  
Yoshitaka Taniyasu ◽  
...  
Keyword(s):  
Electrical Performance ◽  
Multilayer Graphene ◽  
Cvd Graphene ◽  
Graphene Synthesis

scholarly journals Decreasing graphene synthesis temperature by catalytic metal engineering and thermal processing

RSC Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 1477-1480
Author(s):  
Li Zheng ◽  
Xinhong Cheng ◽  
Peiyi Ye ◽  
Lingyan Shen ◽  
Qian Wang ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Thermal Processing ◽  
Synthesis Temperature ◽  
Graphene Growth ◽  
Cvd Graphene ◽  
Graphene Synthesis ◽  
Catalytic Metal

The CVD graphene growth temperature can be lowered to 700 °C by copper engineering with carbon implantation.

scholarly journals Highly uniform monolayer graphene synthesis via a facile pretreatment of copper catalyst substrates using an ammonium persulfate solution

RSC Advances ◽  
2019 ◽  
Vol 9 (36) ◽  
pp. 20871-20878 ◽  
Author(s):  
Hyunhak Jeong ◽  
Wang-Taek Hwang ◽  
Younggul Song ◽  
Jae-Keun Kim ◽  
Youngrok Kim ◽  
...  
Keyword(s):  
Copper Catalyst ◽  
Ammonium Persulfate ◽  
Monolayer Graphene ◽  
Large Area ◽  
Graphene Growth ◽  
Cvd Graphene ◽  
Graphene Synthesis ◽  
Highly Uniform

A facile method for preparing a pretreated copper catalyst substrate for highly uniform, large-area CVD graphene growth is proposed.

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