scholarly journals CVD Graphene Synthesis on Copper Foils and Doping Effect by Nitric Acid

2013 ◽  
Vol 14 (5) ◽  
pp. 246-249 ◽  
Author(s):  
Teresa Oh
Keyword(s):  
Nitric Acid ◽  
Doping Effect ◽  
Cvd Graphene ◽  
Copper Foils ◽  
Graphene Synthesis

Synthesis of CVD-graphene on rapidly heated copper foils

Nanoscale ◽  
2014 ◽  
Vol 6 (9) ◽  
pp. 4728-4734 ◽  
Author(s):  
Sang-Min Kim ◽  
Jae-Hyun Kim ◽  
Kwang-Seop Kim ◽  
Yun Hwangbo ◽  
Jong-Hyuk Yoon ◽  
...  
Keyword(s):  
Structural Properties ◽  
Mass Production ◽  
Rapid Heating ◽  
Copper Catalyst ◽  
Cvd Graphene ◽  
Copper Foils ◽  
Graphene Synthesis ◽  
Time Required

Rapid heating of a copper catalyst can greatly reduce the time required for CVD-graphene synthesis, which may make the mass production of graphene with good electrical and structural properties possible.

scholarly journals Influence of the Total Gas Flow at Different Reaction Times for CVD-Graphene Synthesis on Polycrystalline Nickel

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
M. P. Lavin-Lopez ◽  
J. L. Valverde ◽  
L. Sanchez-Silva ◽  
A. Romero
Keyword(s):  
Reaction Time ◽  
Gas Flow ◽  
Reaction Times ◽  
Monolayer Graphene ◽  
Graphene Monolayer ◽  
Multilayer Graphene ◽  
Reaction Step ◽  
Polycrystalline Nickel ◽  
Cvd Graphene ◽  
Graphene Synthesis

Optimization of the total gas flow (CH4+H2) during the reaction step for different reaction times for CVD-graphene synthesis on polycrystalline nickel foil using an atmospheric pressure set-up is reported. Athickness valuerelated to number of graphene layers in each of the synthesized samples was determined using an Excel-VBA application. This method assigned athickness valuebetween 1 and 1000 and provided information on the percentage of each type of graphene (monolayer, bilayer, and multilayer) deposited onto the polycrystalline nickel sheet. The influence of the total gas flow during the reaction step and the reaction time was studied in detail. Optical microscopy showed that samples were covered with different types of graphene, such as multilayer, few-layer, bilayer, and monolayer graphene. The synthesis variables were optimized according to thethickness valueand the results were verified by Raman spectroscopy. The best conditions were obtained with a reaction temperature of 980°C, a CH4/H2flow rate ratio of 0.07 v/v, a reaction time of 1 minute, and a total gas flow of 80 NmL/min. In the sample obtained under the optimized conditions, 80% of the area was covered with monolayer graphene and less than 1% with multilayer graphene.

Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates

2016 ◽  
Vol 8 (49) ◽  
pp. 33786-33793 ◽  
Author(s):  
M. Lukosius ◽  
J. Dabrowski ◽  
J. Kitzmann ◽  
O. Fursenko ◽  
F. Akhtar ◽  
...  
Keyword(s):  
Cvd Graphene ◽  
Metal Free ◽  
Graphene Synthesis

scholarly journals Early stage of CVD graphene synthesis on Ge(001) substrate

Carbon ◽  
2018 ◽  
Vol 134 ◽  
pp. 183-188 ◽  
Author(s):  
L. Di Gaspare ◽  
A.M. Scaparro ◽  
M. Fanfoni ◽  
L. Fazi ◽  
A. Sgarlata ◽  
...  
Keyword(s):  
Early Stage ◽  
Cvd Graphene ◽  
Graphene Synthesis

scholarly journals Comparing the methods of copper substrate polishing for CVD graphene synthesis

2021 ◽  
Vol 2057 (1) ◽  
pp. 012121
Author(s):  
I A Kostogrud ◽  
E V Boyko ◽  
P E Matochkin ◽  
D V Sorokin
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Copper Substrate ◽  
Chemical Vapour ◽  
Cvd Graphene ◽  
Graphene Coating ◽  
Plasma Electrolyte ◽  
Graphene Synthesis ◽  
Cvd Synthesis

Abstract This paper presents a comparison of chemical and plasma electrolyte polishing methods for preparing a copper substrate for graphene synthesis by chemical vapour deposition. It is shown that in order to achieve the most uniform morphology of the surface of the copper substrate, it is preferable to use the electrolyte-plasma polishing method. With its help, the proportion of multilayer regions in the graphene coating obtained as a result of CVD synthesis decreases. The obtained results may serve a recommendation for creating a graphene coating with specified parameters.

The chemistry of CVD graphene

2018 ◽  
Vol 6 (23) ◽  
pp. 6082-6101 ◽  
Author(s):  
Jan Plutnar ◽  
Martin Pumera ◽  
Zdeněk Sofer
Keyword(s):  
Epitaxial Growth ◽  
Chemical Modifications ◽  
Cvd Graphene ◽  
Graphene Synthesis

This review covers all aspects of possible graphene synthesis by CVD deposition and epitaxial growth, its doping and chemical modifications published to date.

scholarly journals Graphene Synthesis by Inductively Heated Copper Foils: Reactor Design and Operation

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 305
Author(s):  
Katya Pashova ◽  
Elyes Dhaouadi ◽  
Ivaylo Hinkov ◽  
Ovidiu Brinza ◽  
Yves Roussigné ◽  
...  
Keyword(s):  
Process Parameters ◽  
Copper Foil ◽  
Room Temperature ◽  
Eddy Currents ◽  
Heating System ◽  
Total Power ◽  
Optimization Analysis ◽  
Copper Foils ◽  
Graphene Synthesis ◽  
Induction Heating System

We report on the design of a reactor to grow graphene via inductively heating of copper foils by radio frequency (RF) magnetic fields. A nearly uniform magnetic field induced by Helmholtz-like coils penetrates the copper foil generating eddy currents. While the frequency of the current is being rapidly varied, the substrate temperature increases from room temperature to ~1050 °C in 60 s. This temperature is maintained under Ar/H2 flow to reduce the copper, and under Ar/H2/CH4 to nucleate and grow the graphene over the entire copper foil. After the power cut-off, the temperature decreases rapidly to room temperature, stopping graphene secondary nucleation. Good quality graphene was obtained and transferred onto silicon, and coated with a 300 nm layer of SiO2 by chemical etching of the copper foil. After synthesis, samples were characterized by Raman spectroscopy. The design of the coils and the total power requirements for the graphene induction heating system were first estimated. Then, the effect of the process parameters on the temperature distribution in the copper foil was performed by solving the transient and steady-state coupled electromagnetic and thermal problem in the 2D domain. The quantitative effects of these process parameters were investigated, and the optimization analysis results are reported providing a root toward a scalable process for large-sized graphene.

Bilayer graphene synthesis by plasma treatment of copper foils without using a carbon-containing gas

Carbon ◽  
2014 ◽  
Vol 77 ◽  
pp. 823-828 ◽  
Author(s):  
Ryuichi Kato ◽  
Kazuo Tsugawa ◽  
Yuki Okigawa ◽  
Masatou Ishihara ◽  
Takatoshi Yamada ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Bilayer Graphene ◽  
Copper Foils ◽  
Graphene Synthesis

Turbostratic multilayer graphene synthesis on CVD graphene template toward improving electrical performance

2019 ◽  
Vol 58 (SI) ◽  
pp. SIIB04 ◽  
Author(s):  
Chaopeng Wei ◽  
Ryota Negishi ◽  
Yui Ogawa ◽  
Masashi Akabori ◽  
Yoshitaka Taniyasu ◽  
...  
Keyword(s):  
Electrical Performance ◽  
Multilayer Graphene ◽  
Cvd Graphene ◽  
Graphene Synthesis

scholarly journals Decreasing graphene synthesis temperature by catalytic metal engineering and thermal processing

RSC Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 1477-1480
Author(s):  
Li Zheng ◽  
Xinhong Cheng ◽  
Peiyi Ye ◽  
Lingyan Shen ◽  
Qian Wang ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Thermal Processing ◽  
Synthesis Temperature ◽  
Graphene Growth ◽  
Cvd Graphene ◽  
Graphene Synthesis ◽  
Catalytic Metal

The CVD graphene growth temperature can be lowered to 700 °C by copper engineering with carbon implantation.

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