Direct epitaxial CVD synthesis of tungsten disulfide on epitaxial and CVD graphene

RSC Advances ◽  
2015 ◽  
Vol 5 (119) ◽  
pp. 98700-98708 ◽  
Author(s):  
G. V. Bianco ◽  
M. Losurdo ◽  
M. M. Giangregorio ◽  
A. Sacchetti ◽  
P. Prete ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Tungsten Disulfide ◽  
Cvd Graphene ◽  
Cvd Synthesis

Direct epitaxial growth of WS2 isolated crystals and WS2 continuous films onto epitaxial- and CVD-graphene providing a homogeneous and narrow PL peak.

Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

1987 ◽  
Vol 102 ◽  
Author(s):  
D. L. Doering ◽  
F. S. Ohuchi ◽  
W. Jaegermann ◽  
B. A. Parkinson
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Layered Material ◽  
Tungsten Disulfide ◽  
Layer By Layer ◽  
Metal Contacts ◽  
Layered Semiconductor ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

scholarly journals Comparing the methods of copper substrate polishing for CVD graphene synthesis

2021 ◽  
Vol 2057 (1) ◽  
pp. 012121
Author(s):  
I A Kostogrud ◽  
E V Boyko ◽  
P E Matochkin ◽  
D V Sorokin
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Copper Substrate ◽  
Chemical Vapour ◽  
Cvd Graphene ◽  
Graphene Coating ◽  
Plasma Electrolyte ◽  
Graphene Synthesis ◽  
Cvd Synthesis

Abstract This paper presents a comparison of chemical and plasma electrolyte polishing methods for preparing a copper substrate for graphene synthesis by chemical vapour deposition. It is shown that in order to achieve the most uniform morphology of the surface of the copper substrate, it is preferable to use the electrolyte-plasma polishing method. With its help, the proportion of multilayer regions in the graphene coating obtained as a result of CVD synthesis decreases. The obtained results may serve a recommendation for creating a graphene coating with specified parameters.

The chemistry of CVD graphene

2018 ◽  
Vol 6 (23) ◽  
pp. 6082-6101 ◽  
Author(s):  
Jan Plutnar ◽  
Martin Pumera ◽  
Zdeněk Sofer
Keyword(s):  
Epitaxial Growth ◽  
Chemical Modifications ◽  
Cvd Graphene ◽  
Graphene Synthesis

This review covers all aspects of possible graphene synthesis by CVD deposition and epitaxial growth, its doping and chemical modifications published to date.

Hydrogen-Assisted Epitaxial Growth of Monolayer Tungsten Disulfide and Seamless Grain Stitching

2018 ◽  
Vol 30 (2) ◽  
pp. 403-411 ◽  
Author(s):  
Hyun Goo Ji ◽  
Yung-Chang Lin ◽  
Kosuke Nagashio ◽  
Mina Maruyama ◽  
Pablo Solís-Fernández ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Tungsten Disulfide

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

AEM of reaction-bonded SiC

1992 ◽  
Vol 50 (1) ◽  
pp. 344-345
Author(s):  
K Das Chowdhury ◽  
R. W. Carpenter ◽  
W. Braue
Keyword(s):  
Mechanical Properties ◽  
Phase Transformation ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Liquid Silicon ◽  
Structural Ceramic ◽  
Few Data

Research on reaction-bonded SiC (RBSiC) is aimed at developing a reliable structural ceramic with improved mechanical properties. The starting materials for RBSiC were Si,C and α-SiC powder. The formation of the complex microstructure of RBSiC involves (i) solution of carbon in liquid silicon, (ii) nucleation and epitaxial growth of secondary β-SiC on the original α-SiC grains followed by (iii) β>α-SiC phase transformation of newly formed SiC. Due to their coherent nature, epitaxial SiC/SiC interfaces are considered to be segregation-free and “strong” with respect to their effect on the mechanical properties of RBSiC. But the “weak” Si/SiC interface limits its use in high temperature situations. However, few data exist on the structure and chemistry of these interfaces. Microanalytical results obtained by parallel EELS and HREM imaging are reported here.

Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-221-Pr8-228
Author(s):  
E. de Paola ◽  
P. Duverneuil ◽  
A. Langlais ◽  
M. Nguyen
Keyword(s):  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Barrel Reactor

LIQUID PHASE EPITAXIAL GROWTH OF InxGa1-xAs/ InP NEAR SOLID INSTABILITY

1982 ◽  
Vol 43 (C5) ◽  
pp. C5-3-C5-10 ◽  
Author(s):  
M. C. Joncour ◽  
J. L. Benchimol ◽  
J. Burgeat ◽  
M. Quillec
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxial ◽  
Liquid Phase Epitaxial Growth
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