Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates

2016 ◽  
Vol 8 (49) ◽  
pp. 33786-33793 ◽  
Author(s):  
M. Lukosius ◽  
J. Dabrowski ◽  
J. Kitzmann ◽  
O. Fursenko ◽  
F. Akhtar ◽  
...  
2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
M. P. Lavin-Lopez ◽  
J. L. Valverde ◽  
L. Sanchez-Silva ◽  
A. Romero

Optimization of the total gas flow (CH4+H2) during the reaction step for different reaction times for CVD-graphene synthesis on polycrystalline nickel foil using an atmospheric pressure set-up is reported. Athickness valuerelated to number of graphene layers in each of the synthesized samples was determined using an Excel-VBA application. This method assigned athickness valuebetween 1 and 1000 and provided information on the percentage of each type of graphene (monolayer, bilayer, and multilayer) deposited onto the polycrystalline nickel sheet. The influence of the total gas flow during the reaction step and the reaction time was studied in detail. Optical microscopy showed that samples were covered with different types of graphene, such as multilayer, few-layer, bilayer, and monolayer graphene. The synthesis variables were optimized according to thethickness valueand the results were verified by Raman spectroscopy. The best conditions were obtained with a reaction temperature of 980°C, a CH4/H2flow rate ratio of 0.07 v/v, a reaction time of 1 minute, and a total gas flow of 80 NmL/min. In the sample obtained under the optimized conditions, 80% of the area was covered with monolayer graphene and less than 1% with multilayer graphene.


Nanoscale ◽  
2014 ◽  
Vol 6 (9) ◽  
pp. 4728-4734 ◽  
Author(s):  
Sang-Min Kim ◽  
Jae-Hyun Kim ◽  
Kwang-Seop Kim ◽  
Yun Hwangbo ◽  
Jong-Hyuk Yoon ◽  
...  

Rapid heating of a copper catalyst can greatly reduce the time required for CVD-graphene synthesis, which may make the mass production of graphene with good electrical and structural properties possible.


Carbon ◽  
2018 ◽  
Vol 134 ◽  
pp. 183-188 ◽  
Author(s):  
L. Di Gaspare ◽  
A.M. Scaparro ◽  
M. Fanfoni ◽  
L. Fazi ◽  
A. Sgarlata ◽  
...  

2021 ◽  
Vol 2057 (1) ◽  
pp. 012121
Author(s):  
I A Kostogrud ◽  
E V Boyko ◽  
P E Matochkin ◽  
D V Sorokin

Abstract This paper presents a comparison of chemical and plasma electrolyte polishing methods for preparing a copper substrate for graphene synthesis by chemical vapour deposition. It is shown that in order to achieve the most uniform morphology of the surface of the copper substrate, it is preferable to use the electrolyte-plasma polishing method. With its help, the proportion of multilayer regions in the graphene coating obtained as a result of CVD synthesis decreases. The obtained results may serve a recommendation for creating a graphene coating with specified parameters.


2018 ◽  
Vol 6 (23) ◽  
pp. 6082-6101 ◽  
Author(s):  
Jan Plutnar ◽  
Martin Pumera ◽  
Zdeněk Sofer

This review covers all aspects of possible graphene synthesis by CVD deposition and epitaxial growth, its doping and chemical modifications published to date.


2014 ◽  
Vol 46 (1) ◽  
pp. 94-99 ◽  
Author(s):  
Denys Naumenko ◽  
Iuliia Naumenko ◽  
Nora Grinceviciute ◽  
Valentinas Snitka

2019 ◽  
Vol 58 (SI) ◽  
pp. SIIB04 ◽  
Author(s):  
Chaopeng Wei ◽  
Ryota Negishi ◽  
Yui Ogawa ◽  
Masashi Akabori ◽  
Yoshitaka Taniyasu ◽  
...  

Nanoscale ◽  
2018 ◽  
Vol 10 (13) ◽  
pp. 5840-5844 ◽  
Author(s):  
Je Min Yoo ◽  
Baekwon Park ◽  
Sang Jin Kim ◽  
Yong Seok Choi ◽  
Sungmin Park ◽  
...  

This communication proposes the use of monolayer CVD graphene as a novel metal-free catalyst for degradation of phenols.


RSC Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 1477-1480
Author(s):  
Li Zheng ◽  
Xinhong Cheng ◽  
Peiyi Ye ◽  
Lingyan Shen ◽  
Qian Wang ◽  
...  

The CVD graphene growth temperature can be lowered to 700 °C by copper engineering with carbon implantation.


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