scholarly journals Deposition and application of a Mo–N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine–thiol solvent system

2019 ◽  
Vol 7 (12) ◽  
pp. 7042-7052 ◽  
Author(s):  
Soňa Uličná ◽  
Panagiota Arnou ◽  
Ali Abbas ◽  
Mustafa Togay ◽  
Liam M. Welch ◽  
...  
Keyword(s):  
Solar Cell ◽  
Grain Growth ◽  
Diffusion Barrier ◽  
Solvent System ◽  
Back Contact ◽  
Solution Processed ◽  
Cigs Solar Cell ◽  
System P ◽  
And Performance

The use of a Mo–N barrier for solution-processed CIGS results in reduced MoSe2 formation. This enabled longer selenization time, enhanced grain growth and performance.

scholarly journals Modeling and performance analysis dataset of a CIGS solar cell with ZnS buffer layer

Data in Brief ◽  
2017 ◽  
Vol 14 ◽  
pp. 246-250 ◽  
Author(s):  
Md. Billal Hosen ◽  
Ali Newaz Bahar ◽  
Md. Karamot Ali ◽  
Md. Asaduzzaman,
Keyword(s):  
Solar Cell ◽  
Performance Analysis ◽  
Buffer Layer ◽  
Cigs Solar Cell ◽  
And Performance

A Highly Efficient Thin Film CuInGaSe2 Solar Cell

2015 ◽  
Vol 137 (6) ◽  
Author(s):  
M. Doriani ◽  
H. Dehdashti Jahromi ◽  
M. H. Sheikhi
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Recombination Rate ◽  
Doping Level ◽  
Absorber Layer ◽  
Maximum Efficiency ◽  
Back Contact ◽  
Cigs Solar Cell ◽  
Drift Field ◽  
Graded Bandgap

A new structure for CuIn1−xGaxSe2 (CIGS) solar cell is investigated. The structure consists of an absorber layer with constant bandgap placed next to the cadmium sulfide (CdS) buffer layer and a graded bandgap absorber layer positioned near the molybdenum (Mo) back contact. This leads to a reduced recombination rate at the back contact and enhances collection of generated carriers by additional induced drift field. The structure provides higher efficiency than previous structures. Optimum value of bandgap, thickness, and doping level of the layers are determined to reach maximum efficiency. Moreover, a trap density model is interpolated and applied in the simulations.

Study on the performance of Tungsten–Titanium alloy film as a diffusion barrier for iron in a flexible CIGS solar cell

Solar Energy ◽  
2015 ◽  
Vol 120 ◽  
pp. 357-362 ◽  
Author(s):  
Zedong Gao ◽  
Ming Zhao ◽  
Daming Zhuang ◽  
Engang Fu ◽  
Xiaolong Li ◽  
...  
Keyword(s):  
Titanium Alloy ◽  
Solar Cell ◽  
Diffusion Barrier ◽  
Alloy Film ◽  
Cigs Solar Cell

scholarly journals A Numerical Investigation on the Combined Effects of MoSe2 Interface Layer and Graded Bandgap Absorber in CIGS Thin Film Solar Cells

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 930
Author(s):  
Fazliyana Za’abar ◽  
Yulisa Yusoff ◽  
Hassan Mohamed ◽  
Siti Abdullah ◽  
Ahmad Mahmood Zuhdi ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Cell Structure ◽  
Absorber Layer ◽  
Back Contact ◽  
Cigs Solar Cell ◽  
Cigs Thin Film ◽  
Solar Cell Structure ◽  
Mose2 Layer ◽  
Graded Bandgap

The influence of Molybdenum diselenide (MoSe2) as an interfacial layer between Cu(In,Ga)Se2 (CIGS) absorber layer and Molybdenum (Mo) back contact in a conventional CIGS thin-film solar cell was investigated numerically using SCAPS-1D (a Solar Cell Capacitance Simulator). Using graded bandgap profile of the absorber layer that consist of both back grading (BG) and front grading (FG), which is defined as double grading (DG), attribution to the variation in Ga content was studied. The key focus of this study is to explore the combinatorial effects of MoSe2 contact layer and Ga grading of the absorber to suppress carrier losses due to back contact recombination and resistance that usually occur in case of standard Mo thin films. Thickness, bandgap energy, electron affinity and carrier concentration of the MoSe2 layer were all varied to determine the best configuration for incorporating into the CIGS solar cell structure. A bandgap grading profile that offers optimum functionality in the proposed configuration with additional MoSe2 layer has also been investigated. From the overall results, CIGS solar cells with thin MoSe2 layer and high acceptor doping concentration have been found to outperform the devices without MoSe2 layer, with an increase in efficiency from 20.19% to 23.30%. The introduction of bandgap grading in the front and back interfaces of the absorber layer further improves both open-circuit voltage (VOC) and short-circuit current density (JSC), most likely due to the additional quasi-electric field beneficial for carrier collection and reduced back surface and bulk recombination. A maximum power conversion efficiency (PCE) of 28.06%, fill factor (FF) of 81.89%, JSC of 39.45 mA/cm2, and VOC of 0.868 V were achieved by optimizing the properties of MoSe2 layer and bandgap grading configuration of the absorber layer. This study provides an insight into the different possibilities for designing higher efficiency CIGS solar cell structure through the manipulation of naturally formed MoSe2 layer and absorber bandgap engineering that can be experimentally replicated.

Effect of selenization and sulfurization on the structure and performance of CIGS solar cell

2017 ◽  
Vol 29 (2) ◽  
pp. 1444-1450 ◽  
Author(s):  
P. C. Huang ◽  
C. C. Sung ◽  
J. H. Chen ◽  
R. C. Hsiao ◽  
C. Y. Hsu
Keyword(s):  
Solar Cell ◽  
Cigs Solar Cell ◽  
And Performance

scholarly journals Study on the performance of titanium film as a diffusion barrier layer for CIGS solar-cell application on stainless-steel substrates

Clean Energy ◽  
2019 ◽  
Vol 3 (3) ◽  
pp. 217-221
Author(s):  
Xinxian Jiang ◽  
Boyan Li ◽  
Binbin Song ◽  
Shuwang Zhang ◽  
Yang Qiu ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Solar Cell ◽  
Mass Spectroscopy ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Deposition Pressure ◽  
Stainless Steel Foil ◽  
Cigs Solar Cell ◽  
Diffusion Barrier Layer ◽  
Ti Films

Abstract In this paper, pure titanium (Ti) thin films deposited by radio frequency sputtering were used as a diffusion barrier layer in a flexible copper indium gallium selenium (CIGS) solar cell on a stainless-steel foil and characterized by X-ray diffraction, scanning electron microscopy and second ion mass spectroscopy measurement methods. The influences of the magnetron sputtering pressure on the surface morphology and preferred crystal orientation of Ti films are discussed. It was found that the Ti film showed a (001) preferred orientation and smooth surface topography at lower deposition pressure, while (002) preferred orientation and relatively rough surface topography at higher deposition pressure. In addition, Ti films made with different process pressures were deposited as the barriers and the second ion mass spectroscopy results indicated that a Ti film with the thickness of 200 nm was able to effectively block Fe and Cr diffusion from the stainless-steel foil into the CIGS absorber across the molybdenum back contact. The Ti barrier significantly improved the conversion efficiency of the CIGS solar cell.

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