scholarly journals Enhanced room-temperature thermoelectric performance of p-type BiSbTe by reducing carrier concentration

RSC Advances ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 2252-2257 ◽  
Author(s):  
Zichen Wei ◽  
Yang Yang ◽  
Chenyang Wang ◽  
Zhili Li ◽  
Lixian Zheng ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Alloy Effect ◽  
Ti Substitution ◽  
P Type

Ti substitution leads to enhanced thermoelectric performance of p-type Bi0.5Sb1.5Te3 due to carrier concentration regulation, alloy effect and anisotropic microstructure.

scholarly journals Optimal Carrier Concentration for High Thermoelectric Performance of Lead Substituted Bismuth Telluride in p-Type Doping

2018 ◽  
Vol 28 (2) ◽  
pp. 169
Author(s):  
Van Quang Tran
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Materials ◽  
Density Functional ◽  
Room Temperature ◽  
Density Functional Theory Calculation ◽  
Binary Compound ◽  
Thermoelectric Performance ◽  
Boltzmann Transport ◽  
Relaxation Time Approximation ◽  
P Type

Bi\(_{2}\)Te\(_{3}\) and its alloys are the well-known state-of-the-art thermoelectric materials operating at around room temperature. With lead substituted, the newly formed quasi-binary compound PbBi\(_{4}\)Te\(_{7}\), shows relatively high electrical conductivity and Seebeck coefficient. In this report, we employed the solution of the Boltzmann Transport Equation in a constant relaxation-time approximation within a first-principles density-functional-theory calculation to explore the role of the electronic thermal conductivity, \(\kappa _{e}\), on the thermoelectric performance of the compound with p-type doping. Results show that \(\kappa _{e}\) increases drastically with the increases of both temperature and carrier concentration. Even the power factor has been found to be markedly improved with the increase of the carrier concentration, a rapid increase of \(\kappa _{e}\) emerges as a big hindrance to improve the dimensionless figure of merit, ZT, of the compound. This is responsible for the limit of ZT. The larger ZT is found in low temperatures and carrier concentrations. The highest ZT of about 0.48 occurs at 223 K and at the carrier concentration of \(6\times 10^{17}\)cm\(^{ - 3}\). At room temperature the maximum ZT is slightly smaller. We demonstrated that at a particular temperature to maximize the thermoelectric performance of the compound, the carrier concentration must be optimized. Results show that the compound with p-type doping is a promising thermoelectric materials operating at around room temperature.

High Thermoelectric Performance of p-Type Bi0.5Sb1.5Te3+xTe Crystals Prepared via Gradient Freezing

2012 ◽  
Vol 621 ◽  
pp. 167-171
Author(s):  
Tao Hua Liang ◽  
Shi Qing Yang ◽  
Zhi Chen ◽  
Qing Xue Yang
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type

p-type Bi0.5Sb1.5Te3+xTe thermoelectric crystals with various percentages of Te (x = 0.00 wt.%–3.00 wt.%) excess were prepared by the gradient freeze method. By doping with different Te contents, anti-site defects, Te vacancies and hole carrier concentrations were controlled. The Seebeck coefficient, resistivity, thermal conductivity, carrier concentration, and mobility were measured. The relationships between the Te content and thermoelectric properties were investigated in detail. The results suggested that the thermoelectric figure of merit ZT of the Bi0.5Sb1.5Te3+0.09wt.% crystals was 1.36 near room temperature, the optimum carrier concentration was 1.25 × 1019 cm-3, and the mobility was 1480 cm2 V-1 S-1, respectively.

scholarly journals Analyzing transport properties of p-type Mg2Si–Mg2Sn solid solutions: optimization of thermoelectric performance and insight into the electronic band structure

2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Electronic Band Structure ◽  
Thermoelectric Performance ◽  
Electronic Band ◽  
P Type ◽  
Insight Into

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.

scholarly journals Optical and Transport Properties of p-Type GaAs

2012 ◽  
Vol 36 (1) ◽  
pp. 97-107 ◽  
Author(s):  
Mehnaz Sharmin ◽  
Shamima Choudhury ◽  
Nasrin Akhtar ◽  
Tahmina Begum
Keyword(s):  
Light Intensity ◽  
Carrier Concentration ◽  
Hall Coefficient ◽  
Hall Mobility ◽  
Room Temperature ◽  
Diffraction Method ◽  
Lattice Parameter ◽  
Band Gap Energy ◽  
Hall Effect Measurements ◽  
P Type

Electrical properties such as electrical resistivity, Hall coefficient, Hall mobility, carrier concentration of p-type GaAs samples were studied at room temperature (300 K). Resistivity was  found to be of the order of 5.6 × 10-3?-cm. The Hall coefficient (RH) was calculated to be 7.69 × 10-1cm3/C and Hall mobility (?H) was found to be 131cm2/V-s at room temperature from Hall effect   measurements. Carrier concentration was estimated to be 8.12 × 1018/cm3 and the Fermi level was calculated directly from carrier density data which was 0.33 eV. Photoconductivity measurements  were carried on by varying sample current, light intensity and temperature at constant chopping     frequency 45.60 Hz in all the cases mentioned above. It was observed that within the range of sample current 0.1 - 0.25mA photoconductivity remains almost constant at room temperature 300K and it was found to be varying non-linearly with light intensity within the range 37 - 12780 lux. Photoconductivity was observed to be increasing linearly with temperature between 308 and 428 K. Absorption coefficient (?) of the samples has been studied with variation of wavelength (300 -  2500 nm). The value of optical band gap energy was calculated between 1.34 and 1.41eV for the material from the graph of (?h?)2 plotted against photon energy. The value of lattice parameter (a) was found to be 5.651 by implying X-ray diffraction method (XRD).DOI: http://dx.doi.org/10.3329/jbas.v36i1.10926Journal of Bangladesh Academy of Sciences, Vol. 36, No. 1, 97-107, 2012 

High thermoelectric performance of n-type Bi2Te2.7Se0.3via nanostructure engineering

2018 ◽  
Vol 6 (20) ◽  
pp. 9642-9649 ◽  
Author(s):  
D. Li ◽  
J. M. Li ◽  
J. C. Li ◽  
Y. S. Wang ◽  
J. Zhang ◽  
...  
Keyword(s):  
Thermoelectric Material ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Commercial Applications ◽  
P Type

BiSbTe has been realized as an ideal p-type thermoelectric material near room temperature; however, its commercial applications are largely restricted by its n-type counterpart that exhibits relatively inferior thermoelectric performance.

Boosting Thermoelectric Performance in P-Type Polycrystalline SnSe with High Doping Efficiency via Precipitations Design

2021 ◽  
Author(s):  
Chengjun Li ◽  
kunling Peng ◽  
Hong Wu ◽  
Nanhai Li ◽  
Bin Zhang ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Performance ◽  
Electrical Performance ◽  
P Type

Polycrystalline SnSe has been widely studied in recent years due to its potential in thermoelectric applications. However, the carrier concentration and electrical performance have not been effectively optimized due to...

P-Type Transparent Conductivity of Cu1-xAlS2 (x = 0 ~ 0.08)

2008 ◽  
Vol 368-372 ◽  
pp. 666-668 ◽  
Author(s):  
Min Ling Liu ◽  
Fu Qiang Huang ◽  
Li Dong Chen
Keyword(s):  
Optical Properties ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Hall Coefficient ◽  
Hall Mobility ◽  
Room Temperature ◽  
Electrical And Optical Properties ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
P Type

A series of Cu1-xAlS2 (x = 0 ~ 0.08) bulk samples were synthesized by spark plasma sintering. The electrical and optical properties were investigated. P-type conductions for all samples were confirmed by both positive Seebeck coefficient and Hall coefficient. Bulk undoped CuAlS2 had a high conductivity of about 0.9 S/cm with a large band gap of 3.4 eV at room temperature. For vacancy-doped in Cu site, the carrier concentration was highly enhanced, reaching 1.7 × 1019 cm-3 for 8 mol% doped sample, and without decreasing the bang gap. The introduction of vacancies destroys the continuity of Cu-S network, which decreases the Hall mobility.

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