Boosting Thermoelectric Performance in P-Type Polycrystalline SnSe with High Doping Efficiency via Precipitations Design

2021 ◽  
Author(s):  
Chengjun Li ◽  
kunling Peng ◽  
Hong Wu ◽  
Nanhai Li ◽  
Bin Zhang ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Performance ◽  
Electrical Performance ◽  
P Type

Polycrystalline SnSe has been widely studied in recent years due to its potential in thermoelectric applications. However, the carrier concentration and electrical performance have not been effectively optimized due to...

scholarly journals Analyzing transport properties of p-type Mg2Si–Mg2Sn solid solutions: optimization of thermoelectric performance and insight into the electronic band structure

2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Electronic Band Structure ◽  
Thermoelectric Performance ◽  
Electronic Band ◽  
P Type ◽  
Insight Into

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.

scholarly journals Enhanced room-temperature thermoelectric performance of p-type BiSbTe by reducing carrier concentration

RSC Advances ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 2252-2257 ◽  
Author(s):  
Zichen Wei ◽  
Yang Yang ◽  
Chenyang Wang ◽  
Zhili Li ◽  
Lixian Zheng ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Alloy Effect ◽  
Ti Substitution ◽  
P Type

Ti substitution leads to enhanced thermoelectric performance of p-type Bi0.5Sb1.5Te3 due to carrier concentration regulation, alloy effect and anisotropic microstructure.

scholarly journals Optimal Carrier Concentration for High Thermoelectric Performance of Lead Substituted Bismuth Telluride in p-Type Doping

2018 ◽  
Vol 28 (2) ◽  
pp. 169
Author(s):  
Van Quang Tran
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Materials ◽  
Density Functional ◽  
Room Temperature ◽  
Density Functional Theory Calculation ◽  
Binary Compound ◽  
Thermoelectric Performance ◽  
Boltzmann Transport ◽  
Relaxation Time Approximation ◽  
P Type

Bi\(_{2}\)Te\(_{3}\) and its alloys are the well-known state-of-the-art thermoelectric materials operating at around room temperature. With lead substituted, the newly formed quasi-binary compound PbBi\(_{4}\)Te\(_{7}\), shows relatively high electrical conductivity and Seebeck coefficient. In this report, we employed the solution of the Boltzmann Transport Equation in a constant relaxation-time approximation within a first-principles density-functional-theory calculation to explore the role of the electronic thermal conductivity, \(\kappa _{e}\), on the thermoelectric performance of the compound with p-type doping. Results show that \(\kappa _{e}\) increases drastically with the increases of both temperature and carrier concentration. Even the power factor has been found to be markedly improved with the increase of the carrier concentration, a rapid increase of \(\kappa _{e}\) emerges as a big hindrance to improve the dimensionless figure of merit, ZT, of the compound. This is responsible for the limit of ZT. The larger ZT is found in low temperatures and carrier concentrations. The highest ZT of about 0.48 occurs at 223 K and at the carrier concentration of \(6\times 10^{17}\)cm\(^{ - 3}\). At room temperature the maximum ZT is slightly smaller. We demonstrated that at a particular temperature to maximize the thermoelectric performance of the compound, the carrier concentration must be optimized. Results show that the compound with p-type doping is a promising thermoelectric materials operating at around room temperature.

High Thermoelectric Performance of p-Type Bi0.5Sb1.5Te3+xTe Crystals Prepared via Gradient Freezing

2012 ◽  
Vol 621 ◽  
pp. 167-171
Author(s):  
Tao Hua Liang ◽  
Shi Qing Yang ◽  
Zhi Chen ◽  
Qing Xue Yang
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type

p-type Bi0.5Sb1.5Te3+xTe thermoelectric crystals with various percentages of Te (x = 0.00 wt.%–3.00 wt.%) excess were prepared by the gradient freeze method. By doping with different Te contents, anti-site defects, Te vacancies and hole carrier concentrations were controlled. The Seebeck coefficient, resistivity, thermal conductivity, carrier concentration, and mobility were measured. The relationships between the Te content and thermoelectric properties were investigated in detail. The results suggested that the thermoelectric figure of merit ZT of the Bi0.5Sb1.5Te3+0.09wt.% crystals was 1.36 near room temperature, the optimum carrier concentration was 1.25 × 1019 cm-3, and the mobility was 1480 cm2 V-1 S-1, respectively.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

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