scholarly journals Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites

2018 ◽  
Vol 20 (37) ◽  
pp. 23837-23846 ◽  
Author(s):  
Yingying Shan ◽  
Zhensheng Lyu ◽  
Xinwei Guan ◽  
Adnan Younis ◽  
Guoliang Yuan ◽  
...  
Keyword(s):  
Low Cost ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Inorganic Materials ◽  
Hybrid Nanocomposites ◽  
Access Memory ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Halide Perovskites ◽  
Lead Halide

We review emerging low-cost solution-processed resistive random-access memory (ReRAM) made of either hybrid nanocomposites or hybrid organo-lead halide perovskites.

scholarly journals Recent advances in resistive random access memory based on lead halide perovskite

InfoMat ◽  
2020 ◽  
Author(s):  
Jiayu Di ◽  
Jianhui Du ◽  
Zhenhua Lin ◽  
Shengzhong (Frank) Liu ◽  
Jianyong Ouyang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Recent Advances ◽  
Halide Perovskite ◽  
Lead Halide

scholarly journals Dynamic conductance characteristics in HfOx-based resistive random access memory

RSC Advances ◽  
2017 ◽  
Vol 7 (21) ◽  
pp. 12984-12989 ◽  
Author(s):  
Ying-Chen Chen ◽  
Yao-Feng Chang ◽  
Xiaohan Wu ◽  
Fei Zhou ◽  
Meiqi Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Dynamic Conductance ◽  
Switching Memory

Schematic of RESET analysis by dynamic conductance of I–V curve in HfOx-based resistive switching memory.

Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory

2016 ◽  
Vol 1 (6) ◽  
Author(s):  
Amit Prakash ◽  
Hyunsang Hwang
Keyword(s):  
Low Cost ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Comprehensive Analysis ◽  
Multiple Resistance ◽  
Access Memory ◽  
Physical Mechanisms ◽  
Reliability Characteristics ◽  
The Impact

Abstract Multilevel per cell (MLC) storage in resistive random access memory (ReRAM) is attractive in achieving high-density and low-cost memory and will be required in future. In this chapter, MLC storage and resistance variability and reliability of multilevel in ReRAM are discussed. Different MLC operation schemes with their physical mechanisms and a comprehensive analysis of resistance variability have been provided. Various factors that can induce variability and their effect on the resistance margin between the multiple resistance levels are assessed. The reliability characteristics and the impact on MLC storage have also been assessed.

scholarly journals Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

RSC Advances ◽  
2017 ◽  
Vol 7 (19) ◽  
pp. 11585-11590 ◽  
Author(s):  
Cong Ye ◽  
Jia-Ji Wu ◽  
Chih-Hung Pan ◽  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
...  
Keyword(s):  
Supercritical Fluid ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Hafnium Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Ito Electrode

A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM).

Effect of Hf incorporation in solution-processed NiOx based resistive random access memory

2014 ◽  
Vol 104 (9) ◽  
pp. 093508 ◽  
Author(s):  
Doo Hyun Yoon ◽  
Si Joon Kim ◽  
Joohye Jung ◽  
Seung Jin Heo ◽  
Hyun Jae Kim
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Solution Processed

Low-cost bidirectional selector based on Ti/TiO2/HfO2/TiO2/Ti stack for bipolar RRAM arrays

2015 ◽  
Vol 29 (35n36) ◽  
pp. 1550244 ◽  
Author(s):  
Yingtao Li ◽  
Rongrong Li ◽  
Peng Yuan ◽  
Xiaoping Gao ◽  
Enzi Chen
Keyword(s):  
Low Cost ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Good Point ◽  
Good Uniformity ◽  
Switching Characteristics ◽  
The One ◽  
Point Of Reference

In this paper, a low-cost Ti/TiO2/HfO2/TiO2/Ti stack structure is proposed as a selector for bipolar resistive random access memory (RRAM) cross-bar array applications. We demonstrate reproducible resistive switching characteristics with significant nonlinearity and good uniformity in the one selector and one resistor (1S1R) structure device that integrate the bidirectional selector with a bipolar Pt/Ti/HfO2/Pt RRAM device. These results provide a good point of reference for evaluating the potential low-cost applications in bipolar RRAM cross-bar array.

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