Effect of Hf incorporation in solution-processed NiOx based resistive random access memory

2014 ◽  
Vol 104 (9) ◽  
pp. 093508 ◽  
Author(s):  
Doo Hyun Yoon ◽  
Si Joon Kim ◽  
Joohye Jung ◽  
Seung Jin Heo ◽  
Hyun Jae Kim
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Solution Processed

Solution Processed Resistive Random Access Memory Devices for Transparent Solid-State Circuit Systems

2014 ◽  
Vol 1633 ◽  
pp. 105-110 ◽  
Author(s):  
Yiran Wang ◽  
Bing Chen ◽  
Dong Liu ◽  
Bin Gao ◽  
Lifeng Liu ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Solution Processed ◽  
Bipolar Resistance Switching

ABSTRACTA solution-processed method is developed to fabricate fully transparent resistive random access memory (RRAM) devices with a configuration of FTO/ZrO2/ITO, where the zirconium dioxide (ZrO2) layer was firstly deposited on fluorine tin oxide (FTO) substrate by sol-gel and then indium tin oxide (ITO) films were deposited on ZrO2 layer by sol-gel as the top electrodes.The solution processed FTO/ZrO2/ITO based RRAM devices show the fully transparency and excellent bipolar resistance switching behaviors. The resistance ratio between high and low resistance states was more than 10, and more than 100 switching cycles and good data retention and multilevel resistive switching have been demonstrated.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

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