scholarly journals Dynamic conductance characteristics in HfOx-based resistive random access memory

RSC Advances ◽  
2017 ◽  
Vol 7 (21) ◽  
pp. 12984-12989 ◽  
Author(s):  
Ying-Chen Chen ◽  
Yao-Feng Chang ◽  
Xiaohan Wu ◽  
Fei Zhou ◽  
Meiqi Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Dynamic Conductance ◽  
Switching Memory

Schematic of RESET analysis by dynamic conductance of I–V curve in HfOx-based resistive switching memory.

Flexible one diode–one resistor resistive switching memory arrays on plastic substrates

RSC Advances ◽  
2014 ◽  
Vol 4 (38) ◽  
pp. 20017-20023 ◽  
Author(s):  
Hyeon Gyun Yoo ◽  
Seungjun Kim ◽  
Keon Jae Lee
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Plastic Substrates ◽  
Resistive Switching Memory ◽  
Change Material ◽  
Switching Memory

Flexible one diode–one resistor resistive random access memory (RRAM) with 8 × 8 arrays composed of high-performance silicon diodes and a resistive change material for fully functional flexible memory operation.

A ferroelectric memristor based on the migration of oxygen vacancies

RSC Advances ◽  
2016 ◽  
Vol 6 (59) ◽  
pp. 54113-54118 ◽  
Author(s):  
Pengfei Hou ◽  
Jinbin Wang ◽  
Xiangli Zhong ◽  
Yuexian Wu
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Multilevel Storage ◽  
Non Destructive ◽  
Switching Memory

Ferroelectric resistive switching memory is a non-destructive and easy to achieve multilevel storage, which is a breakthrough for further improving the density in the random access memory.

Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 88166-88170 ◽  
Author(s):  
Wei-Kang Hsieh ◽  
Ricky W. Chuang ◽  
Shoou-Jinn Chang
Keyword(s):  
Room Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Fabrication And Characterization ◽  
Switching Memory

We report the fabrication and characterization of resistive random access memory (RRAM) with a Ti/MgZnO/Pt structure at room temperature.

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

2008 ◽  
Vol 93 (22) ◽  
pp. 223505 ◽  
Author(s):  
Jung Won Seo ◽  
Jae-Woo Park ◽  
Keong Su Lim ◽  
Ji-Hwan Yang ◽  
Sang Jung Kang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

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