scholarly journals Characterisation of thin boron-doped diamond films using Raman spectroscopy and chemometrics

2019 ◽  
Vol 11 (5) ◽  
pp. 582-586 ◽  
Author(s):  
Peter Knittel ◽  
Robert Stach ◽  
Taro Yoshikawa ◽  
Lutz Kirste ◽  
Boris Mizaikoff ◽  
...  

A non-destructive chemometric method to determine thickness and boron concentration of as-deposited, thin, heavily doped diamond films by Raman microscopy.

2007 ◽  
Vol 52 (11) ◽  
pp. 1471-1474 ◽  
Author(s):  
V. A. Krivchenko ◽  
D. V. Lopaev ◽  
P. V. Minakov ◽  
V. G. Pirogov ◽  
A. T. Rakhimov ◽  
...  

2005 ◽  
Vol 482 (1-2) ◽  
pp. 311-317 ◽  
Author(s):  
P.C. Ricci ◽  
A. Anedda ◽  
C.M. Carbonaro ◽  
F. Clemente ◽  
R. Corpino

2011 ◽  
Vol 1282 ◽  
Author(s):  
S.N. Demlow ◽  
T.A. Grotjohn ◽  
T. Hogan ◽  
M. Becker ◽  
J. Asmussen

ABSTRACTThe electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at a pressure of 160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 0-0.25 ppm, and are compared to those grown previously with 1-10 ppm. The boron acceptor concentration is investigated using infrared absorption, and compared to the boron concentration obtained by SIMS. A four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.


2006 ◽  
Vol 203 (12) ◽  
pp. 3147-3151 ◽  
Author(s):  
S. Ghodbane ◽  
D. Ballutaud ◽  
A. Deneuville ◽  
C. Baron

2005 ◽  
Vol 202 (11) ◽  
pp. 2154-2159 ◽  
Author(s):  
M. Pedroza-Montero ◽  
V. Chernov ◽  
B. Castañeda ◽  
R. Meléndrez ◽  
J. A. N. Gonçalves ◽  
...  

2019 ◽  
Vol 93 ◽  
pp. 54-58 ◽  
Author(s):  
V. Mortet ◽  
Z. Vlčková Živcová ◽  
A. Taylor ◽  
M. Davydová ◽  
O. Frank ◽  
...  

1995 ◽  
Vol 10 (6) ◽  
pp. 1448-1454 ◽  
Author(s):  
E.N. Farabaugh ◽  
L. Robins ◽  
A. Feldman ◽  
Curtis E. Johnson

Boron-doped diamond films have been grown by the hot filament chemical vapor deposition process. The feed gas was a mixture of argon, bubbled through a solution of B2O3 in ethanol, and hydrogen. The highest growth rate was 0.7 μm/h. The boron concentration in the films depended on the concentration of B2O3 in the ethanol. The highest boron doping level, as measured by secondary ion mass spectroscopy, was 6300 atomic ppm. Raman spectroscopy and x-ray diffraction both confirmed the presence of crystalline diamond in the films. The frequency of the diamond Raman line decreased with increasing boron concentration. This shift may arise from an interaction of the charged carriers (holes) produced by the boron doping and the Raman-active optic phonon. The oxidation rates of doped and undoped films were measured by thermogravimetric analysis at 700 °C in flowing high purity oxygen. Films with a boron concentration of 6300 ppm oxidized at one-tenth the rate of undoped diamond. A layer of B2O3, detected on the surface of an oxidized B-doped film, is believed to act as a protective barrier that decreases the oxidation rate.


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