Interface effect on electronic and optical properties of antimonene/GaAs van der Waals heterostructures

2017 ◽  
Vol 5 (37) ◽  
pp. 9687-9693 ◽  
Author(s):  
Ning Wang ◽  
Dan Cao ◽  
Jun Wang ◽  
Pei Liang ◽  
Xiaoshuang Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Van Der Waals ◽  
Band Alignment ◽  
Optical Absorption Coefficient ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Visible Light Range ◽  
High Optical Absorption ◽  
High Optical Absorption Coefficient

Antimonene/GaAs van der Waals heterostructures exhibit a type-II band alignment and a high optical absorption coefficient in the visible-light range.

Tunable electronic and optical properties of InSe/InTe van der Waals heterostructures toward optoelectronic applications

2018 ◽  
Vol 6 (27) ◽  
pp. 7201-7206 ◽  
Author(s):  
Jimin Shang ◽  
Longfei Pan ◽  
Xiaoting Wang ◽  
Jingbo Li ◽  
Hui-Xiong Deng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Normal Strain ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Typical Type ◽  
Direct Band

2D InSe/InTe van der Waals heterostructures with a direct band structure and typical type-II band alignment, effectively tuned by applying normal strain, are systematically discussed for future optoelectronic devices.

A first-principles study on the electronic and optical properties of a type-II C2N/g-ZnO van der Waals heterostructure

2021 ◽  
Vol 23 (6) ◽  
pp. 3963-3973
Author(s):  
Jianxun Song ◽  
Hua Zheng ◽  
Minxia Liu ◽  
Geng Zhang ◽  
Dongxiong Ling ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dft Calculations ◽  
First Principles ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
Van Der Waals Heterostructure ◽  
Vdw Heterostructure

The structural, electronic and optical properties of a new vdW heterostructure, C2N/g-ZnO, with an intrinsic type-II band alignment and a direct bandgap of 0.89 eV at the Γ point are extensively studied by DFT calculations.

Optical properties of orthorhombic germanium selenide: an anisotropic layered semiconductor promising for optoelectronic applications

2021 ◽  
Author(s):  
Agata Karolina Tołłoczko ◽  
Szymon J. Zelewski ◽  
Michał Błaszczak ◽  
Tomasz Woźniak ◽  
Anna Siudzińska ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Van Der Waals ◽  
Group Iv ◽  
Black Phosphorus ◽  
Layered Semiconductor ◽  
Germanium Selenide ◽  
Optoelectronic Applications ◽  
High Optical Absorption

Group-IV monochalcogenides, such as germanium selenide (GeSe) are strongly anisotropic semiconducting van der Waals crystals isoelectronic to black phosphorus, with superior stability in air conditions. High optical absorption, good conductivity,...

scholarly journals Electrical control of excitons in van der Waals heterostructures with type-II band alignment

2018 ◽  
Vol 98 (12) ◽  
Author(s):  
A. Chaves ◽  
J. G. Azadani ◽  
V. Ongun Özçelik ◽  
R. Grassi ◽  
T. Low
Keyword(s):  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Electrical Control

scholarly journals PN/PAs-WSe2 van der Waals heterostructures for solar cell and photodetector

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Xinyi Zheng ◽  
Yadong Wei ◽  
Kaijuan Pang ◽  
Ngeywo Kaner Tolbert ◽  
Dalin Kong ◽  
...  
Keyword(s):  
Refractive Index ◽  
Solar Cells ◽  
Negative Refractive Index ◽  
Wide Spectrum ◽  
Van Der Waals ◽  
Band Alignment ◽  
Ultraviolet Region ◽  
Type I ◽  
Type Ii ◽  
Van Der Waals Heterostructures

Abstract By first-principles calculations, we investigate the geometric stability, electronic and optical properties of the type-II PN-WSe2 and type-I PAs-WSe2 van der Waals heterostructures(vdWH). They are p-type semiconductors with indirect band gaps of 1.09 eV and 1.08 eV based on PBE functional respectively. By applying the external gate field, the PAs-WSe2 heterostructure would transform to the type-II band alignment from the type-I. With the increasing of magnitude of the electric field, two heterostructures turn into the n-type semiconductors and eventually into metal. Especially, PN/PAs-WSe2 vdWH are both high refractive index materials at low frequencies and show negative refractive index at high frequencies. Because of the steady absorption in ultraviolet region, the PAs-WSe2 heterostructure is a highly sensitive UV detector material with wide spectrum. The type-II PN-WSe2 heterostructure possesses giant and broadband absorption in the near-infrared and visible regions, and its solar power conversion efficiency of 13.8% is higher than the reported GaTe–InSe (9.1%), MoS2/p-Si (5.23%) and organic solar cells (11.7%). It does project PN-WSe2 heterostructure a potential for application in excitons-based solar cells.

Vertical strain and electric field tunable band alignment in type-II ZnO/MoSSe van der Waals heterostructures

2021 ◽  
Author(s):  
Pan Wang ◽  
Yixin Zong ◽  
Hao Liu ◽  
Hongyu Wen ◽  
Yueyang Liu ◽  
...  
Keyword(s):  
Electric Field ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Vertical Strain

The band alignment of type-II ZnO/MoSSe vdWH can be tuned to types I and III by strain and the electric field.

A type-II C2N/α-Te van der Waals heterojunction with improved optical properties by external perturbation

2019 ◽  
Vol 21 (39) ◽  
pp. 21753-21760 ◽  
Author(s):  
Zhuang Ma ◽  
Yusheng Wang ◽  
Yuting Wei ◽  
Chong Li ◽  
Xiuwen Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Broad Spectrum ◽  
Near Infrared ◽  
External Perturbation ◽  
Band Alignment ◽  
Type Ii ◽  
Unique Type ◽  
Spectrum Width ◽  
Tunable Band Gap

The C2N/α-Te vdW heterojunction possessed a unique type-II band alignment, tunable band gap, improved optical absorption strength, and broad spectrum width (ultraviolet to near-infrared).

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