scholarly journals Intense NIR emission in YVO4:Yb3+ thin films by atomic layer deposition

2017 ◽  
Vol 5 (33) ◽  
pp. 8572-8578 ◽  
Author(s):  
Michael N. Getz ◽  
Per-Anders Hansen ◽  
Øystein S. Fjellvåg ◽  
Mohammed A. K. Ahmed ◽  
Helmer Fjellvåg ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Nir Emission ◽  
Quantum Splitting ◽  
Splitting Process

Thin films of YVO4:Yb3+ exhibiting intense NIR emission have been deposited by atomic layer deposition. The NIR emission is attributed to a quantum splitting process that could be used to enhance the efficiency of solar cells.

Deposition of ZnO based thin films by atmospheric pressure spatial atomic layer deposition for application in solar cells

2017 ◽  
Vol 9 (2) ◽  
pp. 021203 ◽  
Author(s):  
Viet Huong Nguyen ◽  
João Resende ◽  
Carmen Jiménez ◽  
Jean-Luc Deschanvres ◽  
Perrine Carroy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atmospheric Pressure ◽  
Atomic Layer ◽  
Layer Deposition

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity

2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Defect Control for High‐Efficiency Cu 2 ZnSn(S,Se) 4 Solar Cells by Atomic Layer Deposition of Al 2 O 3 on Precursor Film

Solar RRL ◽  
2021 ◽  
pp. 2100181
Author(s):  
Yali Sun ◽  
Pengfei Qiu ◽  
Siyu Wang ◽  
Hongling Guo ◽  
Rutao Meng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
High Efficiency ◽  
Atomic Layer ◽  
Precursor Film ◽  
Layer Deposition ◽  
Defect Control

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition

scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Molecular Precursors ◽  
Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

Sign in / Sign up

Export Citation Format

Share Document