In situ monitoring of resistivity and carrier concentration during molecular beam epitaxy of topological insulator Bi2Se3

2013 ◽  
Author(s):  
Jack Hellerstedt ◽  
J. H. Chen ◽  
Dohun Kim ◽  
William G. Cullen ◽  
C. X. Zheng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Topological Insulator ◽  
Molecular Beam ◽  
In Situ Monitoring

Optical in situ monitoring of complex oxide thin film laser molecular beam epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 950-954
Author(s):  
Fan Chen ◽  
Huibin Lu ◽  
Tong Zhao ◽  
Zhenghao Chen ◽  
Guozhen Yang
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Complex Oxide ◽  
In Situ Monitoring ◽  
Oxide Thin Film ◽  
Laser Molecular Beam Epitaxy

In-situ monitoring of Si and SiGe growth on Si(001) surfaces during gas-source molecular beam epitaxy using reflectance anisotropy

1996 ◽  
Vol 164 (1-4) ◽  
pp. 40-46 ◽  
Author(s):  
J. Zhang ◽  
A.K. Lees ◽  
A.G. Taylor ◽  
D. Raisbeck ◽  
N. Shukla ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
In Situ Monitoring ◽  
Reflectance Anisotropy ◽  
Gas Source
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