scholarly journals Crack-based strain sensor with diverse metal films by inserting an inter-layer

RSC Advances ◽  
2017 ◽  
Vol 7 (55) ◽  
pp. 34810-34815 ◽  
Author(s):  
Taemin Lee ◽  
Yong Whan Choi ◽  
Gunhee Lee ◽  
Sang Moon Kim ◽  
Daeshik Kang ◽  
...  
Keyword(s):  
Metal Layer ◽  
Strain Sensor ◽  
Metal Films ◽  
Mechanical Crack

We present a mechanical crack-based strain sensor with metal films by introducing an inter-layer. Two inter-layers are used; Cr layer is for generating cracks and MoO3layer for enhancing the adhesion between the substrate and the metal layer.

scholarly journals Design of a Sensitive Balloon Sensor for Safe Human–Robot Interaction

Sensors ◽  
2021 ◽  
Vol 21 (6) ◽  
pp. 2163
Author(s):  
Dongjin Kim ◽  
Seungyong Han ◽  
Taewi Kim ◽  
Changhwan Kim ◽  
Doohoe Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Strain Sensor ◽  
High Sensitivity ◽  
Human Robot Interaction ◽  
Large Area ◽  
Tactile Sensors ◽  
Robot Interaction ◽  
Mechanical Crack ◽  
Flexible Strain Sensor ◽  
Contact Sensing

As the safety of a human body is the main priority while interacting with robots, the field of tactile sensors has expanded for acquiring tactile information and ensuring safe human–robot interaction (HRI). Existing lightweight and thin tactile sensors exhibit high performance in detecting their surroundings. However, unexpected collisions caused by malfunctions or sudden external collisions can still cause injuries to rigid robots with thin tactile sensors. In this study, we present a sensitive balloon sensor for contact sensing and alleviating physical collisions over a large area of rigid robots. The balloon sensor is a pressure sensor composed of an inflatable body of low-density polyethylene (LDPE), and a highly sensitive and flexible strain sensor laminated onto it. The mechanical crack-based strain sensor with high sensitivity enables the detection of extremely small changes in the strain of the balloon. Adjusting the geometric parameters of the balloon allows for a large and easily customizable sensing area. The weight of the balloon sensor was approximately 2 g. The sensor is employed with a servo motor and detects a finger or a sheet of rolled paper gently touching it, without being damaged.

Metal Etch in Advanced Immersion Tank with Precision Uniformity Using Agitation and Wafer Rotation

2014 ◽  
Vol 219 ◽  
pp. 138-142
Author(s):  
Scott Tice ◽  
Chan Geun Park
Keyword(s):  
Metal Layer ◽  
Electrical Potential ◽  
Dry Etching ◽  
Metal Films ◽  
Wafer Fabrication ◽  
Wafer Surface ◽  
Semiconductor Wafer ◽  
Isotropic Etching ◽  
Semiconductor Wafer Fabrication ◽  
Metal Etching

In semiconductor wafer fabrication, etching refers to the process of removing unwanted material from wafer surface through a subtractive process. Metal etching is most commonly used in the patterning of metal films for interconnects by establishing specific connection and conduction paths and can be classified by dry etching, de-plating and dissolution of the layers on various substrates such as silicon, SiO2, Si3N4, GaAs, germanium, and sapphire. Dry etching is used to produce very precise etching of vertical channels or vias forming the device features or lines which make up the conductive path because it is anisotropic or etching in one direction. Dry etching is achieved by using chemical gases and plasma in a process chamber so dry etching tools are very large, complex and expensive to purchase and operate. De-plating is a process of electro-chemically removing metal material from the surface of the wafer to an anode by creating a difference in electrical potential between the surface to be etched/de-plated (typically cathode) and the “target” or anode where the material is to be collected. De-plating in single wafer tools has also replaced immersion processing due to the better uniformity it provides. However, De-plating single wafer tools are also very large and expensive to operate and have low throughput (wafers per hour). Dissolution/Immersion is the used of recirculated chemical baths to perform the etching process. In an immersion bath chemical is used to dissolve the metal layer that is unprotected by the mask. Immersion metal etch process has been on the decline because of its isotropic etching property and poor etch uniformity caused by non-uniform chemical flow around wafers in the tank. For the most of etch processes lateral etching is undesired because it occurs on the walls of the features and makes them thinner or misshapen. As a result, most of critical etching steps are performed by dry etching systems. However, if etch uniformity is precise, immersion etching can be used for less critical features in place of complex dry etching and de-plating.

scholarly journals Effect of Metal Thickness on the Sensitivity of Crack-Based Sensors

Sensors ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 2872 ◽  
Author(s):  
Eunhan Lee ◽  
Taewi Kim ◽  
Heeseong Suh ◽  
Minho Kim ◽  
Peter Pikhitsa ◽  
...  
Keyword(s):  
American Sign Language ◽  
High Performance ◽  
Metal Layer ◽  
High Sensitivity ◽  
Human Motion ◽  
Motion Detector ◽  
Metal Thickness ◽  
Mechanical Crack ◽  
Pet Film ◽  
The Relationship

Among many attempts to make a decent human motion detector in various engineering fields, a mechanical crack-based sensor that deliberately generates and uses nano-scale cracks on a metal deposited thin film is gaining attention for its high sensitivity. While the metal layer of the sensor must be responsible for its high performance, its effects have not received much academic interest. In this paper, we studied the relationship between the thickness of the metal layer and the characteristics of the sensor by depositing a few nanometers of chromium (Cr) and gold (Au) on the PET film. We found that the sensitivity of the crack sensor improves/increases under the following conditions: (1) when Au is thin and Cr is thick; and (2) when the ratio of Au is lower than that of Cr, which also increases the transmittance of the sensor, along with its sensitivity. As we only need a small amount of Au to achieve high sensitivity of the sensor, we have suggested more efficient and economical fabrication methods. With this crack-based sensor, we were able to successfully detect finger motions and to distinguish various signs of American Sign Language (ASL).

Transparent ITO mechanical crack-based pressure and strain sensor

2016 ◽  
Vol 4 (42) ◽  
pp. 9947-9953 ◽  
Author(s):  
Taemin Lee ◽  
Yong Whan Choi ◽  
Gunhee Lee ◽  
Peter V. Pikhitsa ◽  
Daeshik Kang ◽  
...  
Keyword(s):  
High Precision ◽  
Strain Sensor ◽  
Engineering Research ◽  
Research Fields ◽  
Mechanical Crack

Sensors to detect motion with high precision have been extensively studied in diverse engineering research fields.

Photolithography-assisted precise patterning of nanocracks for ultrasensitive strain sensors

2021 ◽  
Vol 9 (7) ◽  
pp. 4262-4272
Author(s):  
Junshan Liu ◽  
Hongji Guo ◽  
Ming Li ◽  
Chi Zhang ◽  
Yongzhi Chu ◽  
...  
Keyword(s):  
Strain Sensor ◽  
Strain Range ◽  
Metal Films ◽  
Strain Sensors ◽  
Gauge Factor

A photolithography-assisted nanocrack patterning method is reported to precisely define the nanocrack pattern in metal films. This method is used to fabricate an ultrasensitive strain sensor with a gauge factor of ∼20 000 in 0–1.2% strain range.

Characterization of TiN Diffusion Barrier for Submicron Technology

1992 ◽  
Vol 260 ◽  
Author(s):  
G. A. Dixit ◽  
F. S. Chen ◽  
H. Zhang ◽  
G. D. Yao ◽  
C. C. Wei ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Metal Layer ◽  
Metal Films ◽  
X Ray Diffraction ◽  
Tin Films ◽  
X Ray ◽  
Barrier Metal ◽  
Tin Diffusion Barrier ◽  
Post Deposition

AbstractThe electrical properties and structure of reactively sputtered titanium nitride barrier metal films have been characterized. Junction leakages and yields for different post deposition treatments of the barrier metal layer are reported. TEM, x-ray diffraction and Auger electron spectroscopy have been used for the physical characterization of the TiN films.

Thin Metal Films and Multi-Layers Structure as Absorbers for Infrared Detectors

2010 ◽  
Vol 663-665 ◽  
pp. 352-355
Author(s):  
Huan Liu ◽  
Liang Song ◽  
Shun Zhou ◽  
Chang Long Cai
Keyword(s):  
Metal Film ◽  
Metal Layer ◽  
Wide Band ◽  
Polyimide Film ◽  
Metal Films ◽  
Thin Metal Film ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Sensor Material ◽  
Quarter Wave

As thin metal films are known to act as wide-band absorbers for infrared radiation, in this paper Ni metal films are prepared on the Ge surface of double-sided polishing, The results showed the absorbing properties of the metal layer are strongly influenced by the dielectric function of the sensor material. This paper also describes one multi-layers structure as absorber. The structure included a reflector layer of 100-nm-thick Ti (e-beam evaporation), 2-µm-thick polyimide(spin-coating), and 14.9-nm-thick Ni film (e-beam evaporation). These contain a half transmissive thin metal film, a total reflective thin metal film and a quarter-wave polyimide film. The results showed that, measured performance matches well with theoretical predictions.

Peel Strength in the Cu/Cr/Polyimide System

1996 ◽  
Vol 436 ◽  
Author(s):  
I. S. Park ◽  
Jin Yu ◽  
Y. B. Park
Keyword(s):  
Plastic Deformation ◽  
Metal Layer ◽  
Peel Test ◽  
Peel Strength ◽  
Metal Films ◽  
X Ray ◽  
Pretreatment Condition ◽  
Beam Analysis ◽  
Pretreatment Conditions ◽  
Elastoplastic Beam

AbstractIn order to understand the effects of plastic deformation and the interfacial fracture energy on the peel strength, thickness of the metal layer and the pretreatment conditions of polyimide were varied in the Cu/Cr/polyimide system. The work expenditure during the peel test was estimated using the stress strain curves of metal films, X-ray measurements of the plastic strain in the peeled films, and the elastoplastic beam analysis. Results indicate that the peel strength is strongly affected by the film thickness and the pretreatment condition in a synergistic way, and that the measured peel strength is more a measure of the plastic deformation during the peel test than a measure of the true interfacial energy.

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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