Characterization of TiN Diffusion Barrier for Submicron Technology

1992 ◽  
Vol 260 ◽  
Author(s):  
G. A. Dixit ◽  
F. S. Chen ◽  
H. Zhang ◽  
G. D. Yao ◽  
C. C. Wei ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Metal Layer ◽  
Metal Films ◽  
X Ray Diffraction ◽  
Tin Films ◽  
X Ray ◽  
Barrier Metal ◽  
Tin Diffusion Barrier ◽  
Post Deposition

AbstractThe electrical properties and structure of reactively sputtered titanium nitride barrier metal films have been characterized. Junction leakages and yields for different post deposition treatments of the barrier metal layer are reported. TEM, x-ray diffraction and Auger electron spectroscopy have been used for the physical characterization of the TiN films.

Characterization of hydrofluoric acid treated Y–Ba–Cu–O oxides

1989 ◽  
Vol 4 (6) ◽  
pp. 1320-1325 ◽  
Author(s):  
Q. X. Jia ◽  
W. A. Anderson
Keyword(s):  
Hydrofluoric Acid ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Surface Passivation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zero Resistance ◽  
Reaction With Water ◽  
Scanning Electron

Effects of hydrofluoric acid (HF) treatment on the properties of Y–Ba–Cu–O oxides were investigated. No obvious etching of bulk Y–Ba–Cu–O and no degradation of zero resistance temperature were observed even though the oxides were placed into 49% HF solution for up to 20 h. Surface passivation of Y–Ba–Cu–O due to HF immersion was verified by subsequent immersion of Y–Ba–Cu–O in water. A thin layer of amorphous fluoride formed on the surface of the Y–Ba–Cu–O during HF treatment, which limited further reaction between Y–Ba–Cu–O and HF, and later reaction with water. Thin film Y–Ba–Cu–O was passivated by HF vapors and showed no degradation in Tc-zero after 30 min immersion in water. The properties of the surface layer of Y–Ba–Cu–O oxide after HF treatment are reported from Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy studies.

Characterization of Stress and Texture in Rtcvd Poly-Si Layers by X-Ray Diffraction

1991 ◽  
Vol 239 ◽  
Author(s):  
István Bársony ◽  
Jos G.E. Klappe ◽  
Tom W. Ryan
Keyword(s):  
Deposition Temperature ◽  
Polycrystalline Silicon ◽  
Columnar Structure ◽  
Film Stress ◽  
Grain Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Residual Film ◽  
Post Deposition

ABSTRACTThe properties of polycrystalline silicon layers deposited by RTCVD have been studied by texture, stress and electrical analyse. The intrinsic layers intended for applications in integrated IC processing are very much textured with the preferred orientation depending on deposition temperature and atmosphere. Very low residual film stress in the order of 10 dyn/cm2 was detected, and a transition from compressive to tensile stress with increasing deposition temperature around 800°C was observed. This was associated with the development of the columnar structure by the (110) orientation becoming dominant at the expense of the (100) texture. Also the effect of post-deposition anneal ambience on the grain structure has been studied. Grain size and grain-boundary trapping in after doped layers have been evaluated in P-implanted RTA activated layers.

Synthesis and Characterization of Polyvinyl Alcohol/Zinc Hydroxide Composite

2016 ◽  
Vol 701 ◽  
pp. 307-311
Author(s):  
Umma Habiba ◽  
Amalina Muhammad Afifi ◽  
Bee Chin Ang
Keyword(s):  
Fourier Transform ◽  
Polyvinyl Alcohol ◽  
Electron Spectroscopy ◽  
Synthesis And Characterization ◽  
Zinc Hydroxide ◽  
Film Casting ◽  
X Ray Diffraction ◽  
Casting Method ◽  
X Ray

In this study, Polyvinyl Alcohol /Zinc Hidroxide composite was synthesised via film casting method. Fourier transform infrared and X-Ray diffraction was undertaken to analyze the interaction between polyvinyl alcohol and zinc hydroxide.Morphology of the resulting PVA/Zn(OH)2 composite structure was observed by Field Emission Scannig Electron Spectroscopy. FTIR and XRD results showed interaction between PVA and zinc hydroxide. These interaction are responsible for change in the thermal behavior of the composite.

Growth and Structural Characterization of Znse Single Crystals

1989 ◽  
Vol 152 ◽  
Author(s):  
Elmer E. Anderson ◽  
Hai- Yuin Cheng ◽  
Michael J. Edgell
Keyword(s):  
Single Crystals ◽  
Electron Spectroscopy ◽  
Vapor Transport ◽  
X Ray Diffraction ◽  
Etch Pits ◽  
X Ray ◽  
Etch Pit ◽  
Auger Microscopy ◽  
Transport Method

ABSTRACTSingle crystals of ZnSe have been grown by the physical vapor transport method in sealed quartz ampoules. The largest crystal grown measures 1 cm x 4 mm x 2 mm and required a total growing time of 11 days. Polished wafers cut from the crystals have been etched and examined by optical microscopy, x-ray diffraction, scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and scanning Auger microscopy (SAM). No impurities or unwanted phases were detected, but frequent twinning occurs. Zn-rich {111} faces were identified by SAM. Triangular etch pits are observed on Zn {lll} faces but not on Se faces. Etch pit densities are about 104 per cm2 on slow-cooled samples but are about 100 times greater when cooling is more rapid.

Synthesis and Characterization of Nitrogen Implanted Titanium Alloys

2007 ◽  
Vol 29-30 ◽  
pp. 91-94
Author(s):  
B.Y. Choi ◽  
J.K. Jeong ◽  
Y.B. Lim
Keyword(s):  
Wear Resistance ◽  
Titanium Alloys ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Wear Track ◽  
Nitrogen Concentration ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface Modified

Nitrogen implanted titanium alloys with enhanced wear resistance have been synthesized under the conditions of energy and N++N2 +ion dose in the range of 30keV to 120keV and 3×1017ions/cm2 to 1×1018ions/cm2, respectively. Auger electron spectroscopy and X-ray diffraction show that supersaturated titanium solid solution with the gradient nitrogen concentration and titanium nitride compounds are formed in the surface modified regions of the materials. Enhanced wear resistance of the nitrogen implanted titanium alloy at energy of 120keV and ion dose of 1×1018ions/cm2 has been showed and explained on the basis of observed microstructure including the formation of micropits on the wear track in the present study.

Modifications in the Course of Reaction Between Co and GaAs Due To The Presence of a Ge Film

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Genut ◽  
M. Eizenberg
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Spectroscopy ◽  
Gaas Substrate ◽  
Auger Electron ◽  
Metal Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Crystal Gaas

ABSTRACTModifications in the course of reaction between Co thin films and single crystal GaAs substrate due to the addition of a Ge film either on top or below the metal layer have been studied. The microstructure and phase formation for the systems: Co/GaAs, Co/Ge/GaAs, and Ge/Co/GaAs have been studied by Auger electron spectroscopy, transmission electron microscopy and X-ray diffraction.

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

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