Nanoscale diffusive memristor crossbars as physical unclonable functions

Nanoscale ◽  
2018 ◽  
Vol 10 (6) ◽  
pp. 2721-2726 ◽  
Author(s):  
R. Zhang ◽  
H. Jiang ◽  
Z. R. Wang ◽  
P. Lin ◽  
Y. Zhuo ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Silver Clusters ◽  
Physical Unclonable Functions ◽  
Random Dispersion ◽  
Oxide Matrix ◽  
Memristor Crossbars ◽  
High Level ◽  
Area Efficient

We propose and demonstrate a novel Ag:SiO2 diffusive memristor PUF, which takes advantage of the random dispersion of silver clusters in a silicon oxide matrix. Our PUFs are area efficient, self-digitized, easy to fabricate and provide a high level of security.

scholarly journals Nanocomposite antifriction molybdenum disulfide (filler) – silicon oxide (matrix) coatings

2019 ◽  
Vol 337 ◽  
pp. 012087
Author(s):  
S. Alexandrov ◽  
K. Tyurikov ◽  
A. Breki ◽  
G. Kondrashkova ◽  
V. Shashikhin ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Silicon Oxide ◽  
Oxide Matrix

Optical Properties of Microcrystalline Silicon in Oxide Matrix through Partial Oxidation of Anodized Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
Toshimichi Ito ◽  
Toshimichi Ohta ◽  
Osamu Arakaki ◽  
Akio Hiraki
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Partial Oxidation ◽  
Silicon Oxide ◽  
Light Emission ◽  
Wavelength Region ◽  
Microcrystalline Silicon ◽  
Quantum Size ◽  
Visible Luminescence ◽  
Oxide Matrix

ABSTRACTMicrocrystalline silicon embedded in silicon oxide has been prepared by means of partial oxidation of porous silicon produced anodically from degenerate p-Si wafers. Their optical properties such as absorption coefficients and luminescence have been characterized. Results show blue shifts in absorption and photoluminescence spectra in a visible wavelength region with decreasing size of the microcrystalline Si in the Si oxide matrix. The quantum size effect is discussed as well as possible origins of the observed visible luminescence, including light emission from as-anodized (or H-chemisorbed) porous silicon.

Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix

2003 ◽  
Vol 83 (10) ◽  
pp. 2058-2060 ◽  
Author(s):  
E. W. H. Kan ◽  
W. K. Choi ◽  
C. C. Leoy ◽  
W. K. Chim ◽  
D. A. Antoniadis ◽  
...  
Keyword(s):  
Size Distribution ◽  
Silicon Oxide ◽  
Oxide Matrix

Stress development of germanium nanocrystals in silicon oxide matrix

2006 ◽  
Vol 89 (11) ◽  
pp. 113126 ◽  
Author(s):  
W. K. Choi ◽  
H. G. Chew ◽  
F. Zheng ◽  
W. K. Chim ◽  
Y. L. Foo ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Stress Development ◽  
Germanium Nanocrystals ◽  
Oxide Matrix

Phonon confinement in Ge nanocrystals in silicon oxide matrix

2011 ◽  
Vol 109 (3) ◽  
pp. 033107 ◽  
Author(s):  
Yiaxiong Jie ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
Z. X. Shen ◽  
W. K. Choi
Keyword(s):  
Silicon Oxide ◽  
Phonon Confinement ◽  
Oxide Matrix ◽  
Ge Nanocrystals

Photoluminescent Si nanoparticles embedded in silicon oxide matrix

2005 ◽  
Vol 124-125 ◽  
pp. 475-478 ◽  
Author(s):  
V. Kapaklis ◽  
C. Politis ◽  
P. Poulopoulos ◽  
P. Schweiss
Keyword(s):  
Silicon Oxide ◽  
Si Nanoparticles ◽  
Oxide Matrix
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