Phonon confinement in Ge nanocrystals in silicon oxide matrix

2011 ◽  
Vol 109 (3) ◽  
pp. 033107 ◽  
Author(s):  
Yiaxiong Jie ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
Z. X. Shen ◽  
W. K. Choi
Keyword(s):  
Silicon Oxide ◽  
Phonon Confinement ◽  
Oxide Matrix ◽  
Ge Nanocrystals

Raman Shift and Broadening in Stress-Minimized Ge Nanocrystals in Silicon Oxide Matrix

1999 ◽  
Vol 581 ◽  
Author(s):  
YX Jie ◽  
CHA Huan ◽  
ATS Wee ◽  
ZX Shen
Keyword(s):  
Silicon Oxide ◽  
Phonon Dispersion ◽  
Weighting Function ◽  
Rf Magnetron Sputtering ◽  
Raman Shift ◽  
Stress Effect ◽  
Phonon Confinement ◽  
Peak Broadening ◽  
Non Gaussian ◽  
Ge Nanocrystals

ABSTRACTGe nanocrystals (nc-Ge) embedded in silicon oxide films were synthesized using RF magnetron sputtering and post-annealing procedure. To minimize the stress effect and inhomogeneity, we intentionally lower the cooling rates and reduce the temperature gradient during annealing. Significant Raman shifts ranging from 2.0 to 5.8 cm−1 have been observed from samples annealed at different temperatures. The size-dependent shift and broadening is found to be in good agreement with the phonon confinement mode together with the Gaussian weighting function, and the isotropic T02 phonon dispersion relation introduced by Sasaki et al. The Raman spectra can also be well-fitted using peaks calculated from the phonon confinement model. The inhomogeneous Raman peak broadening from our samples annealed at lower temperatures are attributed to the non-Gaussian size distribution of Ge nanocrystals.

Raman and photoluminescence properties of Ge nanocrystals in silicon oxide matrix

2004 ◽  
Vol 107 (1) ◽  
pp. 8-13 ◽  
Author(s):  
Y.X Jie ◽  
A.T.S Wee ◽  
C.H.A Huan ◽  
W.X Sun ◽  
Z.X Shen ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Photoluminescence Properties ◽  
Oxide Matrix ◽  
Ge Nanocrystals

Characterization and Manipulation of Exposed Ge Nanocrystals

2004 ◽  
Vol 818 ◽  
Author(s):  
I.D. Sharp ◽  
Q. Xu ◽  
C.Y. Liao ◽  
D.O. Yi ◽  
J.W. Ager ◽  
...  
Keyword(s):  
Hydrofluoric Acid ◽  
Metal Films ◽  
Silica Matrix ◽  
Size Distributions ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Oxide Matrix ◽  
Ge Nanocrystals

AbstractIsotopically pure 70Ge and 74Ge nanocrystals embedded in SiO2 thin films on Si substrates have been fabricated through ion implantation and thermal annealing. Nanocrystals were subsequently exposed using a hydrofluoric acid etching procedure to selectively remove the oxide matrix while retaining up to 69% of the implanted Ge. Comparison of transmission electron micrographs (TEM) of as-grown crystals to atomic force microscope (AFM) data of exposed crystals reveals that the nanocrystal size distribution is very nearly preserved during etching. Therefore, this process provides a new means to use AFM for rapid and straightforward determination of size distributions of nanocrystals formed in a silica matrix. Once exposed, nanocrystals may be transferred to a variety of substrates, such as conducting metal films and optically transparent insulators for further characterization.

scholarly journals Nanocomposite antifriction molybdenum disulfide (filler) – silicon oxide (matrix) coatings

2019 ◽  
Vol 337 ◽  
pp. 012087
Author(s):  
S. Alexandrov ◽  
K. Tyurikov ◽  
A. Breki ◽  
G. Kondrashkova ◽  
V. Shashikhin ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Silicon Oxide ◽  
Oxide Matrix

scholarly journals Carrier Storage in Ge Nanocrystals Grown on Silicon Oxide by a Two Step Dewetting / Nucleation Process

Nanocrystals ◽  
10.5772/10092 ◽  
2010 ◽  
Author(s):  
Abdelillah El ◽  
Michel Troyon ◽  
Karim Gacem ◽  
Quang-Tri Do
Keyword(s):  
Silicon Oxide ◽  
Nucleation Process ◽  
Ge Nanocrystals

Optical Properties of Microcrystalline Silicon in Oxide Matrix through Partial Oxidation of Anodized Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
Toshimichi Ito ◽  
Toshimichi Ohta ◽  
Osamu Arakaki ◽  
Akio Hiraki
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Partial Oxidation ◽  
Silicon Oxide ◽  
Light Emission ◽  
Wavelength Region ◽  
Microcrystalline Silicon ◽  
Quantum Size ◽  
Visible Luminescence ◽  
Oxide Matrix

ABSTRACTMicrocrystalline silicon embedded in silicon oxide has been prepared by means of partial oxidation of porous silicon produced anodically from degenerate p-Si wafers. Their optical properties such as absorption coefficients and luminescence have been characterized. Results show blue shifts in absorption and photoluminescence spectra in a visible wavelength region with decreasing size of the microcrystalline Si in the Si oxide matrix. The quantum size effect is discussed as well as possible origins of the observed visible luminescence, including light emission from as-anodized (or H-chemisorbed) porous silicon.

Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix

2003 ◽  
Vol 83 (10) ◽  
pp. 2058-2060 ◽  
Author(s):  
E. W. H. Kan ◽  
W. K. Choi ◽  
C. C. Leoy ◽  
W. K. Chim ◽  
D. A. Antoniadis ◽  
...  
Keyword(s):  
Size Distribution ◽  
Silicon Oxide ◽  
Oxide Matrix
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